TLP5214A
Photocouplers Infrared LED & Photo IC
TLP5214A
Isolated IGBT/Power MOSFET gate drive
AC and brushless DC motor drives
Industrial Inverters and Uninterruptible Power Supply (UPS)
Unit: mm
The TLP5214A is a highly integrated 4.0 A output current IGBT gate drive photocoupler housed in a long creepage and clearance SO16L package.
The TLP5214A, a smart gate driver photocoupler, includes functions of IGBT
desaturation detection, isolated fault status feedback, soft IGBT turn-off, active
Miller cramping and under voltage lockout (UVLO). Moreover, this phorocoupler
has features of the desaturation leading edge blanking time, filtering time, and
optimisation of the soft-shutdown performance for secure operation of applications.
This photocoupler is suitable for driving IGBT and power MOSFET used in
inverter applications.
The TLP5214A consists two infrared LEDs and two high-gain and high-speed ICs.
They realize high current, high-speed output control
and output fault status feedback.
•
Peak output current:
±4.0 A (max)
•
Guaranteed performance over temperature:
-40 to 110 °C
•
Supply current:
3.8 mA (max)
•
Power supply voltage:
15 V to 30 V
•
Threshold input current:
6 mA (max)
•
Propagation delay time:
150 ns (max)
•
DESAT leading edge blanking time:
1.1 μs (typ.)
•
Common-mode transient immunity:
±35 kV/μs (min)
5000 Vrms (min)
•
Isolation voltage:
•
UL-recognized : UL 1577, File No.E67349
•
cUL-recognized :CSA Component Acceptance Service
No. 5A, File No.E67349
•
VDE approved: EN 60747-5-5, EN 62368-1 (Note 1)
TOSHIBA
11-10M1
Weight: 0.37 g (typ.)
•
Construction mechanical rating
SO16L
Height
Creepage Distance
Clearance
Insulation Thickness
2.3 mm (max)
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
Note 1: When a VDE approved type is needed, please designate the Option(D4).
Truth Table
IF
DESAT
FAULT
(14Pin DESAT Terminal Input)
(3Pin FAULT Terminal Output)
UVLO
(VCC2-VE)
VO
OFF
Not Active ( > VUVLO+)
Not Active
High
Low
ON
Not Active ( >
VUVLO+)
Low ( < VDESATth)
High
High
Not Active ( >
VUVLO+)
High ( > VDESATth)
Low ( FAULT)
Low
ON
ON
Active ( < VUVLO-)
Not Active
High
Low
OFF
Active ( < VUVLO-)
Not Active
High
Low
Start of commercial production
2017-03
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP5214A
Pin Configuration (top view)
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VEE
9
1: VS
2: VCC1
3: FAULT
4: VS
5: CATHODE
6: ANODE
7: ANODE
8: CATHODE
9: VEE
10: VCLAMP
11: VOUT
12: VEE
13: VCC2
14: DESAT
15: VLED
16: VE
Internal Circuit
VCC2
UVLO
ANODE
VOUT
CATHODE
DESAT
DESAT
VEE
SHIELD
VCLAMP
VCC1
VCLAMP
VE
FAULT
Vs
VLED
Note: A 1-μF bypass capacitor must be connected between pins 9 and 13, pins 13 and 16.
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TLP5214A
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 °C)
Characteristics
LED
Input forward current
Input forward current derating (Ta ≥ 95°C)
Peak transient input forward current
(Note 1)
Peak transient input forward current derating (Ta ≥ 95°C)
Unit
IF
25
mA
∆IF/∆Ta
-1
mA/°C
IFPT
1
A
∆IFPT/∆Ta
-25
mA/°C
VR
6
V
Input power dissipation
PD
145
mW
∆ PD /∆Ta
-5.0
mW/°C
VCC1
-0.5 to 7
V
IOPH
-4.0
A
IOPL
+4.0
A
FAULT output current
IFAULT
8
mA
FAULT pin voltage
VFAULT
-0.5 to VCC1
V
(VCC2-VEE)
-0.5 to 35
V
Negative output supply voltage
(VE-VEE)
-0.5 to 15
V
Positive output supply voltage
(VCC2-VE)
-0.5 to 35 - (VE-VEE)
V
VO
-0.5 to VCC2
V
Peak clamping sinking current
IClamp
1.7
A
Miller clamping pin voltage
VClamp
-0.5 to VCC2
V
DESAT voltage
VDESAT
VE to VE + 10
V
PO
410
mW
∆ PO /∆Ta
-14.0
mW/°C
Topr
-40 to 110
°C
Positive input supply voltage
“H” peak output current
Ta = -40 to 110 °C
(Note 2)
“L” peak output current
Total output supply voltage
Output voltage
Output power dissipation
Output power dissipation derating (Ta ≥ 95°C)
Common
Rating
Reverse input voltage
Input power dissipation derating (Ta ≥ 95°C)
Detector
Symbol
Operating temperature range
Storage temperature range
Tstg
-55 to 125
°C
Lead soldering temperature (10 s)
(Note 3)
Tsol
260
°C
Isolation voltage (AC, 60 s, R.H. ≤ 60%)
(Note 4)
BVS
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: A ceramic capacitor (1 μF) should be connected between pins 9 and 13, pins 13 and 16 to stabilize the
operation of the high gain linear amplifier. Furthermore, in case VE - VEE > 0 V, a bypass capacitor, which has
good high frequency characteristic, a ceramic capacitor (1 μF) should be connected between pins 9 and 16.
Failure to provide the bypassing may impair the switching property. The total lead length between capacitor
and coupler should not exceed 1 cm.
Note 1: Pulse width PW ≤ 1 μs, 300 pps
Note 2: Exponential waveform pulse width PW ≤ 0.2 μs, f ≤ 15 kHz, VCC2 = 15 V
Note 3: For the effective lead soldering area.
Note 4: This device considered a two-terminal device: All pins on the LED side are shorted together, and all
pin on the photodetector side are shorted together.
© 2019
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TLP5214A
Recommended Operating Conditions (Note)
Characteristics
Symbol
Min
Typ.
Max
Unit
Total output supply voltage (Note 1)
(VCC2-VEE)
15
-
30
V
Negative output supply voltage
(VE-VEE)
0
-
15
V
Positive output supply voltage
(VCC2-VE)
15
-
30 - (VE-VEE)
V
VCC1
3.3
-
5.5
V
Positive input supply voltage
Input on-state current
(Note 2)
Input off-state voltage
Operating frequency
(Note 3)
IF(ON)
7.5
-
10
mA
VF(OFF)
0
-
0.8
V
f
-
-
50
kHz
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Note 1: If the VCC2 rise slope is sharp, an internal circuit might not operate with stability. Please design the VCC2 rise
slope under 3.0 V / μs.
Note 2: Input signal rise time (fall time) ≤ 0.5 μs.
Note 3: Exponential waveform. IOPH ≥ -4.0 A (≤ 90 ns), IOPL ≤ 4.0 A (≤ 90 ns), Ta = 110 °C
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TLP5214A
Electrical Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 110 °C, VCC2 - VEE = 15 to 30 V, VE - VEE = 0 V)
Symbol
Test
Circuit
Input forward voltage
VF
―
IF = 10 mA, Ta = 25°C
Input reverse current
IR
―
Input capacitance
Ct
―
VFAULTL
―
Characteristics
FAULT low level output voltage
FAULT high level output current
High level output current
Low level output current
(Note 1)
(Note 1)
IFAULTH
IOPH
―
1
Test Condition
Min
Typ.
Max
Unit
1.4
-
1.7
V
VR = 5 V
-
-
10
μA
V = 0 V, f = 1 MHz, Ta = 25 °C
-
95
-
pF
IFAULT = 1.1 mA, VCC1 = 5.5 V
-
0.2
0.4
IFAULT = 1.1 mA, VCC1 = 3.3 V
-
0.2
0.4
VFAULT = 5.5 V, VCC1 = 5.5 V,
Ta = 25 °C
-
-
0.5
VFAULT = 5.5 V, VCC1 = 3.3 V,
Ta = 25 °C
-
-
0.3
VO = VCC2 - 4 V
-
-4.0
-1.2
VO = VCC2 - 7 V
-
-6.5
-3.0
VO = VEE + 2.5 V
1.2
3.5
-
VO = VEE + 7 V
3
5.5
-
90
150
230
V
μA
A
IOPL
2
IOLF
―
VO - VEE = 14 V
High level output voltage
VOH
3
IO = -100 mA
VCC2-0.3
VCC2-0.1
-
Low level output voltage
VOL
4
IO = 100 mA
-
0.1
0.2
VtClamp
―
―
-
2.5
-
ICL
―
VO = VEE + 2.5 V
0.56
1.8
-
High level supply current
ICC2H
5
IO = 0 mA
-
2.4
3.8
Low level supply current
ICC2L
6
IO = 0 mA
-
2.3
3.8
Blanking capacitor charging current
ICHG
7
VDESAT = 2 V
-0.33
-0.24
-0.13
Blanking capacitor discharge current
IDSCHG
8
VDESAT = 7 V
10
49
-
DESAT threshold voltage
VDESAT
―
VCC2 - VE > VUVLO-
5.9
6.5
7.5
VUVLO+
9
VO > 5 V
10.5
11.6
13.5
VUVLO-
9
VO < 5 V
9.2
10.3
11.1
UVLOHYS
―
―
-
1.3
-
Threshold input current (L/H)
IFLH
10
VCC2 = 30 V, VO < 5 V
-
2.6
6
mA
Threshold input voltage (H/L)
VFHL
―
VCC2 = 30 V, VO > 5 V
0.8
-
-
V
Low level output current
during fault condition
Clamp pin threshold voltage
Clamp low level sinking current
UVLO threshold voltage
UVLO hysteresis
mA
V
A
mA
V
Note: All typical values are at Ta = 25 °C
Note: This product is more sensitive than conventional products to electrostatic discharge ESD owing to its low
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Note 1: IO application time ≤ 50 μs, 1 pulse
© 2019
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TLP5214A
Isolation Characteristics (Note) (Ta = 25 °C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
Min
Typ.
Max
Unit
Vs = 0 V, f = 1 MHz
-
1.0
-
pF
R.H. ≤ 60 %, VS = 500 V
12
10
10
-
Ω
AC, 60 s
5000
-
14
Vrms
Note: This device considered a two-terminal device: All pins on the LED side are shorted together, and all pin on
the photodetector side are shorted together.
© 2019
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TLP5214A
Switching Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 110 °C, VCC2 - V EE = 15 to 30 V, VE - VEE = 0 V)
Characteristics
Symbol
Propagation delay time
(Note 1)
Test
Circuit
Test Condition
Min
Typ.
Max
L→H
tpLH
IF = 0 → 10 mA
50
85
150
H→L
tpHL
IF = 10 → 0 mA
50
90
150
Rg = 10 Ω,
IF = 0 → 10 mA
-
32
-
Cg = 25 nF,
IF = 10 → 0 mA
-
18
-
IF = 0 ↔ 10 mA
-
-
50
IF = 0 ↔ 10 mA
-80
-
80
Cg = 25 nF
-
230
500
Cg = 25 nF
-
7.0
8.5
CDESAT = 100 pF, Cg = 10 nF
Rg = 10 Ω,
VCC2 = 30 V,
RF = 2.1 kΩ,
VCC1 = 5 V
-
2.5
3.5
-
1.1
-
-
90
-
-
350
550
-
200
-
7
20
-
0.2
0.6
2
VO (min) = 26 V,
VFAULT(min) = 2 V
±35
-
-
VO (max) = 1 V,
VFAULT(max) = 0.8 V
±35
-
-
Output rise time (10-90 %) (Note 1)
tr
Output fall time (90-10 %) (Note 1)
tf
Pulse with distortion
(Note 1)
| tpHL-tpLH |
Propagation delay skew
(device to device)
(Note 1)
(Note 2)
tpsk
DESAT sense to 90% delay
tDESAT(90%)
DESAT sense to 10% delay
tDESAT(10%)
DESAT leading edge blanking time
tDESAT(FILTER)
DESAT sense to low level
FAULT signal delay
tDESAT(FAULT)
tDESAT(LOW)
DESAT input mute
tDESAT(MUTE)
Low-level Common-mode
transient immunity
12
ns
μs
ns
ns
DESAT sense to low propagation
delay
High-level Common-mode
transient immunity
(Note 3)
VCC2 = 30 V
tDESAT(LEB)
DESAT filter time
RESET to high level FAULT
signal delay
11
Unit
CDESAT = 100 pF,
Rg = 10 Ω,
VCC2 = 30 V,
RF = 2.1 kΩ,
VCC1 = 5.5 V
tRESET(FAULT)
CMH
CML
(Note 4)
13 to
16
Ta = 25 °C,
Rg = 10 Ω,
Cg = 25 nF,
VCC2 = 30 V,
RF = 2.1 kΩ,
CF = 15 pF,
VCM = 1500 Vp-p
μs
kV/μs
Note: All typical values are at Ta = 25 °C.
Note 1: Input signal (f = 10 kHz, duty = 50%, tr = tf = 5 ns or less)
CL is approximately 15 pF which includes probe and stray wiring capacitance.
Note 2: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or
tpLH that will be seen between units at the same given conditions (supply voltage, input current, temperature,
etc).
Note 3: CMH is the maximum rate of fall of the common mode voltage that can sustained with the output voltage in
the logic high state (VO > 26 V or VFAULT > 2 V).
Note 4: CML is the maximum rate of rise of the common mode voltage that can sustained with the output voltage in
the logic low state (VO < 1 V or VFAULT < 0.8 V).
© 2019
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TLP5214A
Test Circuit
Test Circuit 1: IOPH
Test Circuit 2: IOPL
Test Circuit 3: VOH
Test Circuit 4: VOL
Test Circuit 5: ICC2H
Test Circuit 6: ICC2L
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TLP5214A
Test Circuit 7: ICHG
Test Circuit 8: IDSCHG
Test Circuit 9: VUVLO
Test Circuit 10: IFLH
Test Circuit 11: tpLH, tpHL, tr, tf, | tpHL-tpLH |
IF = 10 mA (P.G.)
(f =10 kHz, duty = 50%, rise / fall time 5 ns or less)
P.G.: Pulse generator
Test Circuit 12: tDESAT(90%), tDESAT(10%), tDESAT(LEB), tDESAT(FILTER), tDESAT(FAULT), tDESAT(Low), tDESAT(MUTE),
tRESET(FAULT)
IF = 10 mA (P.G.)
(f =10 kHz, duty = 50%, rise / fall time 5 ns or less)
P.G.: Pulse generator
© 2019
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TLP5214A
Test Circuit 13: CMR_LED1 ON
Test Circuit 14: CMR_LED1 OFF
Test Circuit 15: CMR_LED2 ON
Test Circuit 16: CMR_LED2 OFF
© 2019
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TLP5214A
Characteristics Curves (Note)
IF - T a
(V)
IF - VF
IOPH - Ta
(VOH – VCC2) - IOPH
IOPL - Ta
VOL - IOPL
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TLP5214A
ICL - Ta
(VCLAMP – VEE) - ICL
ICC2L, ICC2H - Ta
ICC2L, ICC2H - VCC2
ICHG - Ta
© 2019
Toshiba Electronic Devices & Storage Corporation
VDESAT - Ta
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TLP5214A
(VOH – VCC2) - Ta
VOL - Ta
IFLH - Ta
VO - IF
tpHL, tpLH, |tpHL - tpLH| - Ta
© 2019
Toshiba Electronic Devices & Storage Corporation
tpHL, tpLH, |tpHL - tpLH| - IF
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TLP5214A
tpHL, tpLH, |tpHL - tpLH| - VCC2
tDESAT(90%) - Ta
tDESAT(10%) - Ta
tDESAT(LEB) - Ta
tDESAT(FILTER) - Ta
© 2019
Toshiba Electronic Devices & Storage Corporation
tDESAT(FAULT) - Ta
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TLP5214A
tDESAT(LOW) - Ta
tRESET(FAULT) - Ta
Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless
otherwise noted.
© 2019
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TLP5214A
Soldering and Storage
(1) Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of
whether a soldering iron or a reflow soldering method is used.
・When using soldering reflow
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be complicated with the interval from the first to the last mountings being 2 weeks.
An example of a temperature profile when lead(Pb)-free solder is used
・When using soldering flow
Preheat the device at a temperature of 150 °C (package surface temperature) for 60 to 150 seconds.
Mounting condition of 260 °C within 10 seconds is recommended.
Flow soldering must be performed once.
・When using soldering iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds
not exceeding 350 °C.
Heating by soldering iron must be done only once per lead.
(2) Precautions for General Storage
・Avoid storage locations where devices may be exposed to moisture or direct sunlight.
・Follow the precautions printed on the packing label of the device for transportation and storage.
・Keep the storage location temperature and humidity within a range of 5 °C to 35 °C and 45 % to 75 %.
・Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions.
・Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage
can cause condensation, resulting in lead oxidation of corrosion, which will deteriorate the solderability of the leads.
・When restoring devices after removal from their packing, use anti-static containers.
・Do not allow loads to be applied directly to devices while they are in storage.
・If devices have been stored for more than two years under normal storage conditions, it is recommended that you
check the leads for ease of soldering prior to use.
© 2019
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TLP5214A
Land Pattern Dimensions for Reference Only
Unit: mm
Marking
Lot No.
TLP5214A
J
Part No. (or abbreviation code)
Process lot No.
Country of origin
J; Japan
Pin No. 1
© 2019
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TLP5214A
1. Ordering Method
When placing an order, please specify the part number, the tape and the quantity (Multiples of 1500) as shown
in the following example.
Example) TLP5214A(TP,E
1500 pcs
Part number: TLP5214A
Tape type: TP (12-mm pitch)
[[G]]/RoHS COMPATIBLE: E (Note 1)
Quantity (must be a multiple of 1500): 1500 pcs
Note 1 : Please contact your Toshiba sales representative for details on environmental information such as the
product’s RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
© 2019
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TLP5214A
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to
control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative or contact us via our website.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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Toshiba Electronic Devices & Storage Corporation
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2019-10-30