TLP525GF

TLP525G,TLP525G−2,TLP525G−4 TOSHIBA Photocoupler IRED & Photo−Triac TLP525G, TLP525G−2, TLP525G−4 Triac Drive Programmable Controllers AC−Output Module Solid State Relay Unit: mm The TOSHIBA TLP525G, −2 and −4 consist of a photo−triac optically coupled to an infrared emitting diode. The TLP525G−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP525G−4 provides four isolated channels in a sixteen lead plastic DIP package. • Peak off−stage voltage: 400 V (min) • Trigger LED current: 10 mA (max) • Peak on−stage current: 2 Apk (max) • Isolation voltage: 2500 Vrms (min) TOSHIBA 11−5B2 Weight: 0.26g (typ.) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configurations (top view) TOSHIBA 11−10C4 Weight: 0.54g (typ.) TOSHIBA 11−20A3 Weight: 1.1g (typ.) Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 1985-01 2019-06-24 TLP525G,TLP525G−2,TLP525G−4 Absolute Maximum Ratings (Ta = 25°C) Characteristics TLP525G TLP525G−2 TLP525G−4 Unit IF 50 50 mA IF / °C −0.7 (Ta ≥ 53°C) −0.5 (Ta ≥ 25°C) mA / °C Forward current LED Forward current derating Pulse forward current IFP 1 (100μs pulse, 100pps) A Reverse voltage VR 5 V Input power dissipation PD 50 60 mW △PD /°C -0.69(Ta ≥ 53°C) -0.6(Ta ≥ 25°C) mW/°C Input power dissipation derating Junction temperature Off−state output terminal voltage On−state RMS current Ta = 25°C Tj 125 °C VDRM 400 V IT (RMS) Ta = 70°C On−state current derating (Ta ≥ 25°C) Detector Rating Symbol IT / °C Peak on state current Peak non-repetitive surge current (PW = 10ms) 80 50 40 −1.1 −0.9 mA mA / °C ITP 2 (100μs pulse, 120pps) A ITSM 1.2 A Po 300 240 mW ΔPO / °C −3.0 -2.4 mW / °C Output power dissipation Output power dissipation derating (Ta ≥ 25°C) 100 Junction temperature Tj 115 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Lead soldering temperature Tsol 260 (10 s) °C BVS 2500 (AC, 60 s, R.H. ≤ 60 %) V rms Isolation voltage (Note) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Peak on−state current ITP ― ― 1 A Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP525G,TLP525G−2,TLP525G−4 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT VF = 0 V, f = 1 MHz ― 30 ― pF Peak off−state current IDRM VDRM = 400 V ― 10 100 nA Peak on−state voltage VTM ITM = 100 mA ― 1.7 3.0 V Holding current Critical rate of rise of off−state voltage Critical rate of rise of commutating voltage IH ― ― 0.6 ― mA dv / dt Vin = 120 Vrms, Ta = 85 °C (Figure 1) 200 500 ― V / μs dv / dt (c) Vin = 30 Vrms, IT = 15 mA (Figure 1) ― 0.2 ― V / μs Min. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VT = 3 V ― 5 10 mA Capacitance input to output CS VS = 0 V, f = 1 MHz ― 0.8 ― pF 5×1010 1014 ― Ω 2500 ― ― Vrms Isolation resistance Isolation voltage RS BVS VS = 500 V, R.H. ≤ 60 % AC, 60 s Fig.1 dv / dt Test Circuit © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP525G,TLP525G−2,TLP525G−4 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP525G,TLP525G−2,TLP525G−4 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-24 TLP525G,TLP525G−2,TLP525G−4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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