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TLP592A(F)

TLP592A(F)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    DIP6

  • 描述:

    PHOTORELAY MOSFET OUT 3MA 6-DIP

  • 数据手册
  • 价格&库存
TLP592A(F) 数据手册
TLP592A TOSHIBA Photocoupler Photorelay TLP592A Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment Unit: mm The Toshiba TLP592A consists of an infrared emitting diode optically coupled to a photo-MOSFET in a 6-pin DIP package. This photorelay has higher output current rating than phototransistor-type photocoupler; hence, it is suitable for use as On/Off control for high current. • Normally open (1-form-A) device • Peak off-state voltage: 60 V (min) • Trigger LED current: 3 mA (max) • On-state current: 500 mA (max) • On-state resistance: 2 Ω (max) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1557, File No.E67349 Pin Configuration (top view) JEDEC ― JEITA ― TOSHIBA 1 6 2 5 3 4 11-7A8S Weight: 0.4 g (typ.) 1: Anode 2: Cathode 4: Drain D1 5: Source 6: Drain D2 Schematic 1 6 2 5 4 Start of commercial production 2002-03 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP592A Absolute Maximum Ratings (Ta = 25°C) Characteristics Rating Unit IF 50 mA Forward current derating (Ta ≥ 25°C) ∆IF/°C −0.5 mA/°C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 60 V Forward current LED Symbol Off-state output terminal voltage A connection On-state current B connection 500 ION 500 C connection 1000 A connection Forward current B connection derating (Ta ≥ 25°C) C connection −5.0 Detector Junction temperature ∆ION/°C mA mA/°C −5.0 −10.0 Tj 125 °C Storage temperature Tstg −55 to 125 °C Operating temperature Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) BVS 2500 Vrms (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit VDD   48 V Supply voltage Forward current IF 5 7.5 25 mA On-state current ION   500 mA Operating temperature Topr −20  65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Circuit Connections 1 6 2 5 3 4 LOAD AC or DC A connection © 2019 Toshiba Electronic Devices & Storage Corporation 1 6 2 5 3 4 LOAD DC B connection 2 1 6 2 5 3 4 LOAD DC C connection 2019-06-24 TLP592A Electrical Characteristics Ta = 25°C) Characteristics LED Detector Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse voltage IR VR = 5 V   10 µA Capacitance CT V = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 60 V   1 µA Capacitance COFF V = 0 V, f = 1 MHz  130  pF Min Typ. Max Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Trigger LED current IFT ION = 500 mA  1.6 3 mA Return LED current IFC IOFF = 100 µA 0.1   mA ION = 500 mA, IF= 5 mA  1 2 ION = 500 mA, IF= 5 mA  0.5 1 ION = 1000 mA, IF= 5 mA  0.25  Test Condition Min Typ. Max Unit A connection On-state resistance B connection RON C connection Ω Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s  0.8  pF 5 × 1010 1014  Ω 2500   Vrms Min Typ. Max Unit  0.8 2  0.1 0.5 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF 1 6 RL VDD IF 2 VOUT VOUT 4 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 90% tOFF 2019-06-24 TLP592A IF – Ta ION – Ta 1200 (mA) 80 ION 60 On-sate current Allowable forward current IF (mA) 100 40 20 0 −20 0 20 40 60 80 100 C connection 1000 800 600 A and B connections 400 200 0 −20 120 0 20 Ambient temperature Ta (°C) 40 I F – VF Ta = 25°C (mA) ION On-state current (mA) Forward current IF 10 3 1 0.3 0.8 1 1.2 Forward voltage 1.4 VF 1.6 400 A connection IF = 5 mA 200 0 −200 −400 −600 −0.6 1.8 −0.4 (V) −0.2 0.2 0.4 0.6 80 100 (V) IFT – Ta 5 4 ION = 500 mA t
TLP592A(F) 价格&库存

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