TLP750_07

TLP750 TOSHIBA Photocoupler GaAℓAs Ired + Photo IC TLP750 Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Analog Signal Isolation The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8−lead DIP. TLP750 has no internal base connection, and is suitable for application in noisy environmental conditions. • • • • Switching speed: tpHL=0.3μs(typ.) Switching speed: tpLH=0.5μs(typ.)(RL=1.9kΩ) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065: 2002, Certificate No.8869 BS EN60950-1: 2002, Certificate No.8870 • • Isolation voltage: 5000Vrms(min.) Option(d4)type VDE approved: DIN EN 60747-5-2, Certificate No. 40009302 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note) When a EN 60747-5-2 approved type is needed, please designate the “Option(D4)” 3 4 6 5 1 2 1 8 7 3 4 5 6 7 8 : N.C. : Cathode : N.C. : Emitter : Collector : N.C. : Cathode 2 : Anode Unit in mm TOSHIBA Weight: 0.54g 11−10C4 Pin Configuration (top view) • Creepage distance: 6.4mm(min.) Clearance: 6.4mm(min.) Insulation thickness: 0.4mm(min.) Schematic ICC IF 2 VF 3 IO 6 GND 5 VO 8 VCC 1 2007-10-01 TLP750 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Pulse forward current LED Peak transient forward current Reverse voltage Diode power dissipation (Note 4) Output current Peak output current Detector Output voltage Supply voltage Output power dissipation (Note 5) Operating temperature range Storage temperature range Lead solder temperature(10s) (Note 6) Isolation voltage (AC, 1min., R.H=60%) (Note 7) (Note 1) (Note 2) (Note 3) Symbol IF IFP IFPT VR PD IO IOP VO VCC PO Topr Tstg Tsol BVS Rating 25 50 1 5 45 8 16 −0.5~15 −0.5~15 100 −55~100 −55~125 260 5000 Unit mA mA A V mW mA mA V V mW °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA / °C above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width ≤ 1μs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 2mW / °C above 70°C. (Note 6) Soldering portion of lead: Up to 2mm from the body of the device. (Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 2 2007-10-01 TLP750 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Forward voltage temperature coefficient Reverse current Capacitance between terminal Symbol VF ΔVF / ΔTa IR CT IOH(1) Detector High level output current IOH(2) IOH High level supply voltage ICCH IF=16mA IF=16mA VR=5V VF=0, f=1MHz IF=0mA, VCC=VO=5.5V IF=0mA, VCC=VO=15V IF=0mA, VCC=VO=15V Ta=70°C IF=0mA, VCC=15V Ta=25°C Current transfer ratio IO/IF IF=16mA VCC=4.5V VO=0.4V Rank: 0 Ta=0~70°C Rank: 0 Low level output voltage Isolation resistance Capacitance between input to output VOL RS CS IF=16mA, VCC=4.5V, IO=1.1mA (rank 0: IO=2.4mA) R.H.=60%, V=5000VDC VS=0, f=1MHz (Note 7) (Note 8) Test Condition Min. ― ― ― ― ― ― ― ― 10 19 5 15 ― 12 Typ. 1.65 −2 ― 45 3 ― ― 0.01 30 30 ― ― ― 14 Max. 1.85 ― 10 ― 500 5 50 1 ― ― ― ― 0.4 Unit V mV / °C μA pF nA μA μA μA % Coupled V 1×10 ― 10 ― ― Ω pF 0.8 Switching Characteristics (Ta = 25°C, VCC = 5V) Characteristic Propagation delay time (H→L) Propagation delay time (L→H) Common mode transient immunity at logic high output Common mode transient immunity at logic low output Symbol Test Cir− cuit Test Condition IF=0→16mA, VCC=5V, 1 tpLH RL=4.1kΩ Rank 0: RL=1.9kΩ IF=16→0mA, VCC=5V, RL=4.1kΩ Rank 0: RL=1.9kΩ Min. ― ― ― ― ― Typ. 0.2 0.3 1.0 0.5 1500 Max. 0.8 0.8 2.0 1.2 ― Unit tpHL μs μs (Note 8) CMH 2 CML IF=0mA, VCM=200Vp−p RL=4.1kΩ (Rank 0: RL=1.9kΩ) IF=16mA, VCM=200Vp−p RL=4.1kΩ (Rank 0: RL=1.9kΩ) V / μs ― −1500 ― V / μs (Note 8) 3 2007-10-01 TLP750 (Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state(VO < 0.8V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state(VO > 2.0V). (Note 9) Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0) Test Circuit 1: Switching Time Test Circuit Pulse Input PW=100μs Duty ratio=1/10 IF Monitor 51Ω IF 1 2 3 4 8 7 6 5 RL VO Output Monitor VO 1.5V tpHL tpLH 5V 1.5V VOL VCC=5V IF 0 Test Circuit 2: Common Mode Noise Immunity Test Circuit VCC=5V 1 IF 2 3 4 8 7 6 5 VCM Pulse generator ZO=50Ω 160( V ) 160( V ) ,CML = tr (μs ) t f (μs ) VCM RL VO Output Monitor VO (IF=0mA) VO (IF=16mA) tr 90% 10% tf 200V 0V 5V 2V 0.8V VOL CMH = 4 2007-10-01 TLP750 100 30 IF – VF Ta = 25 ℃ -2.6 ΔVF/ΔTa – IF 10 3 1 0.3 0.1 0.03 0.01 1.0 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 1.2 1.4 1.6 1.8 2.0 -2.4 (mA) Forward current IF -2.2 -2.0 -1.8 -1.6 -1.4 0.1 0.3 0.5 1 3 5 10 30 Forward voltage VF (V) Forward current IF (mA) 300 IOH(1) – Ta 10 5 IO – IF VCC = 5 V VO = 0.4 V Ta = 25 ℃ High level output current IOH (nA) 100 50 30 3 IO (mA) Output current 1 0.5 0.3 0.1 0.05 0.03 10 5 3 1 0.6 0 40 80 120 160 0.01 0.1 0.3 1 3 10 30 100 300 Ambient temperature Ta (°C) Forward current IF (mA) IO/IF – IF 100 50 VCC = 5 V VO = 0.4 V 1.2 IO/IF – Ta 1.0 Current transfer ratio IO/IF (%) 30 Normalized IO/IF Ta = -25℃ 25℃ 10 100℃ 0.8 0.6 Normalized to: IF = 16mA VCC = 4.5V 0.2 VO = 0.4V Ta = 25°C 5 3 0.4 1 0.3 0.5 1 3 5 10 30 50 0 -40 -20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (°C) 5 2007-10-01 TLP750 IO – VO 10 30 mA 25 mA 8 20 mA 15 mA VCC = 5 V Ta = 25 ℃ 5 VO – IF IF VCC=5V RL VO (mA) IO VO Output voltage (V) 4 3 6 Output current 4 10 mA 2 RL = 2 KΩ 3.9 kΩ Ta=25°C 2 IF = 5 mA 1 1 0 kΩ 0 0 1 2 3 4 5 6 7 0 0 4 8 12 16 20 24 Output voltage VO (V) Forward current IF (mA) 5 3 tpHL, tpLH – RL IF = 16 mA VCC = 5 V Ta = 25 ℃ tpLH Propagation delay time tpLH, tpHL (μs) 1 0.5 0.3 tpHL 0.1 1 3 5 10 30 50 100 Load resistance RL (kΩ) 6 2007-10-01 TLP750 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01