TPCA8008-H(TE12LQM

TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8008-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 0.5±0.1 Unit: mm 1.27 0.4±0.1 0.05 M A 5 • High-speed switching • Small gate charge: QSW = 3.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 0.47Ω (typ.) • High forward transfer admittance: |Yfs| = 3.3S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 4 0.95±0.05 1 5.0±0.2 0.05 S S 1 Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS ±20 V (Note 1) ID 4 Pulsed (Note 1) IDP 8 PD 45 W PD 2.8 W PD 1.6 W EAS 11 mJ IAR 4 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 4 4.25±0.2 8 DC Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) A A 3.5±0.2 0.6±0.1 Absolute Maximum Ratings (Ta = 25°C) 0.595 0.166±0.05 Small footprint due to a small and thin package 1.1±0.2 6.0±0.3 • 5.0±0.2 8 5 0.8±0.1 1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-12-18 TPCA8008-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8008-H Type * Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1mH, RG = 25 Ω, IAR = 4 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-12-18 TPCA8008-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 μA ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ ID = 10 mA, VGS = −5 V 250 ⎯ ⎯ ID = 10 mA, VGS = −20 V 200 ⎯ ⎯ VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V V (BR) DSS Drain-source breakdown voltage V (BR) DSX Gate threshold voltage Vth V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 2 A ⎯ 0.47 0.58 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2 A 1.5 3.3 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss ⎯ 220 ⎯ ⎯ 8 ⎯ ⎯ 17 ⎯ ⎯ 13 ⎯ ⎯ 70 ⎯ ⎯ 10 ⎯ ⎯ 7.6 ⎯ ⎯ 2.4 ⎯ ⎯ 3.7 ⎯ tr ID = 2 A 10 V 0V ton 4.7 Ω Turn-on time VGS RL = 62.5 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd Gate switch charge Qsw VOUT VDD ∼ − 125 V < Duty = 1%, tw = 10 μs VDD ∼ − 200 V, VGS = 10 V, ID = 4 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 8 A ⎯ ⎯ −2.0 V VDSF IDR = 4 A, VGS = 0 V 3 2007-12-18 TPCA8008-H ID – VDS ID – VDS 6 10 5.2 3 (A) 5 ID ID Drain current 10 8 (A) 4 Common source Ta = 25°C Pulse test 4.8 Drain current 5 4.6 2 4.4 1 10 Common source Ta = 25°C Pulse test 5.7 8 5.5 6 5.3 5 4 4.7 2 4.4 VGS = 4 V 0 0 1 2 3 Drain-source voltage 4 VDS VGS = 4 V 0 0 5 (V) 4 2 ID – VGS Common source (V) Ta = 25℃ 4 Pulse test VDS (A) Drain-source voltage ID Drain current 100 25 VDS = 10 V 6 Ta = −55°C 4 2 2 4 6 Gate-source voltage 8 VGS 3 2 1 1 0 0 10 ID = 4 A 2 (V) 4 8 Common source VGS 20 (V) Common source Ta = 25°C Drain-source ON-resistance RDS (ON) (Ω) (S) |Yfs| Forward transfer admittance 16 RDS (ON) – ID 10 VDS = 10 V Pulse test Ta = −55°C 100 25 1 0.1 0.1 12 Gate-source voltage ⎪Yfs⎪ – ID 10 (V) VDS – VGS Pulse test 100 VDS 10 5 Common source 0 0 8 6 Drain-source voltage 10 8 6 8 1 Drain current 10 ID Pulse test 1 VGS = 10 V 0.1 0.1 100 (A) 1 Drain current 4 10 ID (A) 2007-12-18 TPCA8008-H RDS (ON) – Ta IDR – VDS 10 Common source VGS = 10 V Ta = 25°C (A) Common source Pulse test Pulse test IDR 1.2 0.8 Drain reverse current Drain-source ON-resistance RDS (ON) (Ω) 1.6 ID = 4 A 2 0.4 1 0 −80 −40 0 40 80 Ambient temperature 120 Ta 1 10 5 3 0.1 0 160 (°C) −0.4 −0.2 (pF) Vth (V) 10 Gate threshold voltage Coss C Capacitance VDS (V) 80 120 −1.0 Vth – Ta 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 Drain-source voltage −0.8 4 Ciss 1 VGS = 0 V −0.6 Drain-source voltage Capacitance – VDS 1000 1 0.1 1 2 Common source 1 (V) VDS = 10 V ID = 1 mA Pulse test 0 −80 100 VDS 3 −40 0 40 Ambient temperature Ta 160 (°C) Dynamic input/output characteristics VDS 16 100 12 50 VDS = 200 V Common source 8 100 ID = 4 A VGS Ta = 25°C 4 Pulse test 0 0 5 Total gate charge 0 15 10 Qg VGS 200 Gate-source voltage VDS Drain-source voltage 20 (V) 24 (V) 300 (nC) 5 2007-12-18 TPCA8008-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) Transient thermal impedance rth (°C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (3) Tc=25℃ 100 (1) 10 (3) 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 (s) PD – Ta (W) (1) 2.5 PD – Tc 60 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on PD (W) 3 (Note 2b) (2) Drain power dissipation Drain power dissipation PD a glass-epoxy board (b) 2 t = 10s 1.5 1 0.5 0 0 40 1000 120 80 Ambient temperature Ta 40 20 0 160 (°C) 0 40 80 Case temperature 120 Tc 160 (°C) Safe operating area 100 ID max (Pulse) * 10 (A) t =1ms * ID Drain current 10ms * ID max (Continuous) 1 DC Operation Tc = 25°C * Single - Pulse Tc = 25°C 0.1 Curves must be derated linearly with increase temperature. 0.01 1 in VDSS max 10 Drain-source voltage 100 VDS 1000 (V) 6 2007-12-18 TPCA8008-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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