TPCF8B01_07

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications • • • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to-1.2 V(VDS =-10 V, ID = -200 μA) Low forward voltage: VFM(2) = 0.46V(typ.) Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 4) Symbol VDSS VDGR VGSS ID IDP EAS IAR EAR Rating -20 -20 ±8 -2.7 -10.8 1.2 -1.35 0.11 Unit V V V A mJ A mJ Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) JEDEC JEITA TOSHIBA ― ― 2-3U1C SBD (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current (Note 2a, 6) Peak one cycle surge forward current (non-repetitive) Symbol VRRM IF(AV) IFSM Rating 20 1.0 7(50Hz) Unit V A A Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Channel temperature Storage temperature range Single-device operation (Note 3a) Symbol PD (1) PD (2) PD (1) PD (2) Tch Tstg Rating 1.35 1.12 W 0.53 0.33 150 -55~150 °C °C Unit 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 TPCF8B01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 °C/W 111.6 235.8 °C/W 378.8 Unit This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Marking (Note 7) Lot code (month) Lot No. (weekly code) Part No. (or abbreviation code) F8A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD =-16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -1.35 A Note 5: Repetitive rating; Pulse width limited by maximum channel temperature. o Note 6: Rectangular waveform (α =180 ), VR =15V. Note 7: Black round marking “●” locates on the left lower side of parts number marking “F8A” indicates terminal No. 1. 2 2006-11-16 TPCF8B01 Electrical Characteristics (Ta = 25°C) MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 Ω ID = -1.4 A VOUT RL = 7.14 Ω VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8V VDS = -10 V, ID = -200 μA VGS = -1.8 V, ID = -0.7 A VGS = -2.5 V, ID = -1.4A VGS = -4.5 V, ID = -1.4 A VDS = -10 V, ID = -1.4 A Min ⎯ ⎯ -20 -12 -0.5 ⎯ ⎯ ⎯ 2.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 215 110 72 4.7 470 70 80 5 9 8 26 6 4 2 Max ±10 -10 ⎯ ⎯ -1.2 300 160 110 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit μA μA V V VDD ∼ -10 V − Duty < 1%, tw = 10 μs = VDD ∼ -16 V, VGS = -5 V, − ID = -2.7 A MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = -2.7 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max -10.8 -1.2 Unit A V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol VFM(1) VFM(2) IRRM Cj Test Condition IFM = 0.7 A IFM = 1.0 A VRRM = 20 V VR = 10 V, f = 1 MHz Min ⎯ ⎯ ⎯ ⎯ Typ. 0.43 0.46 ⎯ 54 Max ⎯ 0.49 50 ⎯ Unit V V μA pF 3 2006-11-16 TPCF8B01 MOSFET ID – VDS −5 −4 −4.5 −4 −2.5 −2.8 −3.5 −3 −2 −8 −1.8 −10 −4.5 −5 −2.8 −2.5 −3 −3.5 −6 −4 Common source Ta = 25°C Pulse test −2 −1.8 ID – VDS ID (A) Drain current −2 VGS = −1.5 V −1 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 Drain current ID (A) −4 −2 −5 −3 VGS = −1.5 V 0 0 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −5 Common source VDS = −10 V Pulse test −1.0 VDS – VGS Common source Ta = 25°C Pulse test −4 (V) Drain-source voltage VDS Ta = 25°C Ta = −55°C −0.8 Drain current ID (A) −3 −0.6 −2 −0.4 −1 Ta = 100°C −0.2 ID = −2.7 A −1.4 A 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0 0 −0.7 A −2 −4 −6 −8 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test 1000 Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| (S) Drain-source ON resistance RDS (ON) (mΩ) −1.8 V −2.5 V 100 VGS = −4.5 V Forward transfer admittance 10 Ta = 25°C Ta = −55°C Ta = 100°C 1 −0.1 −1 −10 10 −0.1 −1 −10 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCF8B01 RDS (ON) – Ta 300 Common source Pulse test −100 ID = −1.4 A −0.7 A VGS = −1.8 V 200 ID = −1.4 A 150 ID = −2.7 A −0.7 A Common source Ta = 25°C Pulse test IDR – VDS Drain reverse current IDR (A) 250 Drain-source ON resistance RDS (ON) (mΩ) −10 −2.5 −4.5 100 −2.5 V ID = −0.7, −1.4, −2.7 A −1.8 −1 VGS = 0 V 50 −4.5 V 0 −80 −40 0 40 80 120 160 −1 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25°C −2.0 Common source VDS = −10 V ID = −200 μA Pulse test Vth – Ta Vth (V) Ciss −1.5 (pF) Gate threshold voltage 1000 Capacitance C −1.0 100 Coss Crss −0.5 −0.0 −80 10 −0.1 −1 −10 −100 −40 0 40 80 120 160 Ambient temperature Ta (°C) Drain-source voltage VDS (V) PD – Ta 2 t=5s Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Dynamic input/output characteristics −20 −10 Drain power dissipation PD (W) (V) 1.6 (1) 1.2 (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) ｔ＝5S −16 −4 V VDS −12 VGS −8 Drain-source voltage 0.8 (3) 0.4 (4) −8 Common source ID = −2.7 A Ta = 25°C Pulse test −4 −4 −2 0 0 40 80 120 160 0 0 −2 −4 −6 −8 0 −10 Ambient Temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-16 Gate-source voltage VDD = −16 V −6 VGS (V) −8 V VDS TPCF8B01 rth – tw 1000 Single pulse (4) (3) (2) Transient thermal impedance rth (°C/W) 100 (1) 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area 100 (A) ID max (pulse)* 10 1 ms* 10 ms* Drain current ID 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 6 2006-11-16 TPCF8B01 SBD iF – vF 10 0.8 PF (AV) – IF (AV) iF (A) Average forward power dissipation PF (AV) (W) 0.7 Tj=150℃ 1 DC 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0° α 360° Instantaneous forward current 125℃ 75℃ 25℃ 0.1 120° α=60° 180° Rectangular waveform Conduction angle: α 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous forward voltage vF (V) Average forward current IF (AV) (A) Ta max – IF (AV) Device mounted on a glass-epoxy board(a) (Note 2a) rth– tw 100 (4) (3) (2) (1) 160 Maximum allowable lead temperature Ta max (°C) Rectangular waveform Single-device operation (Note 3a) 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0° α 360° I Conduction angle:α Transient thermal impedance rth (°C/W) IF(AV) V R =15V 100 Device mounted on a glass-epoxy board(a)(Note 2a) α=60° 120° 180° DC 10 (1)Single-device operation(Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) 1.6 1 1m 10 m 100 1 10 100 1000 Average forward current IF (AV) (A) Pulse width tw (s) Surge forward current (non-repetitive) 10 9 Ta=25℃ f=50Hz 1000 Cj – VR (typ.) f=1MHz Ta=25℃ Peak surge forward current IFSM (A) 8 7 6 5 4 3 2 1 0 1 10 100 Junction capacitance Cj (pF) 100 10 1 10 100 Number of cycles Reverse voltage VR (V) 7 2006-11-16 TPCF8B01 IR – Tj 10 Pulse test (typ.) 0.06 Rectangular waveform 0° 360° PR (AV) – VR (typ.) Average reverse power dissipation PR (AV) (W) (mA) 0.05 VR α DC 300° 240° 180° 120° 60° 1 IR 0.04 0.1 Conduction angle:α Tj=125℃ Reverse current 0.03 VR=20V 0.01 5V 0.001 10V 0.02 0.01 0.0001 0 20 40 60 80 100 120 140 160 0.00 0 5 10 15 20 Junction temperature Tj (°C) Reverse voltage VR (V) 8 2006-11-16 TPCF8B01 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2006-11-16