TSD1760
Low Vcesat NPN Transistor
TO-252 (DPAK)
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) 50V 50V 3A 0.5V @ IC / IB = 2A / 200mA
Features
● ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP
Ordering Information
Part No.
TSD1760CP RO
Package
TO-252
Packing
2.5Kpcs / 13” Reel
Structure
● ● Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation DC Pulse Ta=25ºC Tc=25ºC
Symbol
VCBO VCEO VEBO IC PD
Limit
50 50 5 3 7 (note 1) 1 (note 2) 15 +150 - 55 to +150
Unit
V V V A W
o o
Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG Note: 1. Single pulse, Pw=10mS, Duty≤2% 2. PCB 1.7mm thick, collector copper plating 10mm x 10mm or larger.
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency
Conditions
IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 30V, IE = 0 VEB = 4V, IC = 0 IC / IB = 2A / 200mA VCE = 2V, IC = 100mA
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob
Min
50 50 5 ---82 ---
Typ
-----0 .2 5 -90 45
Max
---1 1 0.5 560 ---
Unit
V V V uA uA V
VCE =5V, IC=50mA, f=100MHz Output Capacitance VCB = 10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
MHz pF
1/4
Version: A09
TSD1760
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: A09
TSD1760
Low Vcesat NPN Transistor
TO-252 Mechanical Drawing
TO-252 DIMENSION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MAX 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN MAX 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67
3/4
Version: A09
TSD1760
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A09
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