7N60AL-X-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 7N60A 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply. Power MOSFET FEATURES * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness Lead-free: 7N60AL Halogen-free: 7N60AG SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 7N60AL-x-TA3-T 7N60AG-x-TA3-T 7N60AL-x-TF1-T 7N60AG-x-TF1-T 7N60AL-x-TF3-T 7N60AG-x-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 7 VQW-R502-111,D 7N60A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT 7N60A-A 600 V Drain-Source Voltage VDSS 7N60A-B 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed (Note 3) EAS 330 mJ Avalanche Energy 7.5 mJ Repetitive (Note 2) EAR TO-220 65 W Power Dissipation PD TO-220F/TO-220F1 30 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ(MAX) 3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220 TO-220F/TO-220F1 TO-220 TO-220F/TO-220F1 SYMBOL θJA θJA θJC θJC RATINGS 83.3 62.5 1.92 4.16 UNIT °C/W °C/W °C/W °C/W Junction to Ambient Junction to Case ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 7N60A-A 7N60A-B SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250μA VGS = 10V, ID = 3.5A (Note 4) 2.0 1.0 MIN TYP MAX UNIT 600 650 10 100 -100 4.0 1.2 V V µA nA nA V Ω pF pF pF ns ns ns ns nC nC nC ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=25V, VGS=0V, f=1.0 MHz 950 1430 85 130 12 18 16 60 80 65 28 5.5 11 VDD=300V, ID =7A, RG =25Ω (Note 1, 2) VDS=300V, ID=7A, VGS=10 V (Note 1, 2) 42 8.3 17 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 VQW-R502-111,D 7N60A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0V, IS = 7A, Reverse Recovery Time tRR dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2% 2. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 7 28 365 4.23 V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 VQW-R502-111,D 7N60A TEST CIRCUITS AND WAVEFORMS + VDS + L Power MOSFET D.U.T. RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 VQW-R502-111,D 7N60A TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kΩ 12V 0.2µF 0.3µF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 3mA VGS Charge Fig. 3A Gate Charge Test Circuit L VDS BVDSS IAS RD VDD D.U.T. tp VDD Fig. 3B Gate Charge Waveform ID(t) VDS(t) 10V tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 VQW-R502-111,D 7N60A TYPICAL CHARACTERISTICS Power MOSFET Drain Current, ID (A) Drain Current, ID (A) ON Resistance vs. Drain Current Note: 1. Td=25°C 2.0 2. Pulsed test 1.5 VGS=20V 1.0 0.8 0 0 5 10 15 20 25 Drain Current, ID (A) Capacitance vs. Drain Source Voltage 10000 Gate Source Voltage, VGS (V) CISS 10 2.5 Reverse Drain Current vs. Source Drain Voltage VGS=10V Reverse Drain Current, IS (A) ON Resistance, RDS(ON) (Ω) Note: 1. VDS=10V 2. Pulse test 101 100 10-1 0.4 0.6 0.8 1.0 8 1.2 1.4 Source Drain Voltage, VSD (V) Gate Source Voltage vs. Total Gate Charge Note: 1. ID = 7A 2. TC = 25°C Capacitance (pF) 1000 VDD = 80V VDD = 200V 5 VDD = 300V 100 COSS 10 Note: 1. VGS: 0V 2. f = 1MHz 3. TC = 25°C 1 1 0.1 CRSS 0 10 100 5 10 15 20 25 30 35 Total Gate Charge, QG (nC) Drain Source Voltage, VDS (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 VQW-R502-111,D 7N60A TYPICAL CHARACTERISTICS (Cont.) Power MOSFET Drain-Source Voltage, VDSS (Normalized) 1.1 ON-Resistance, RDS(ON) (Normalized) 1.2 Drain-Source Voltage vs. Junction Temperature Note: 1. VGS = 0V 2. ID = 250µA ON-Resistance vs. Junction Temperature 3.0 Note: 1. VGS = 10V 2.5 2. ID = 3.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Drain Current, ID (A) Drain Current, ID (A) 1m s UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VQW-R502-111,D VDSS MAX 7 of 7