12TTS800SPBF

VS-12TTS08SPbF High Voltage Series Vishay Semiconductors Phase Control SCR, 8 A 2 Anode FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition D2PAK 1 Cathode 3 Gate • Designed and qualified for industrial level APPLICATIONS • Input rectification and crow-bar (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VT at 8 A ITSM VRRM < 1.2 V 140 A 800 V DESCRIPTION The VS-12TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 13.5 THREE-PHASE BRIDGE 17 UNITS A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) VRRM/VDRM ITSM VT dV/dt dI/dt TJ Range 8 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 8 A 12.5 800 140 1.2 150 100 - 40 to 125 V A V V/μs A/μs °C UNITS VOLTAGE RATINGS PART NUMBER VS-12TTS08SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 IRRM/IDRM AT 125 °C mA 1.0 Document Number: 94499 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-12TTS08SPbF High Voltage Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS TC = 108 °C, 180° conduction, half sine wave 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C I2√t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 8 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VALUES 8 12.5 A 120 140 72 100 1000 1.2 16.2 0.87 0.05 VR = Rated VRRM/VDRM 1.0 mA 30 50 150 100 V/μs A/μs A2√s V mΩ V A2s UNITS Phase Control SCR, 8 A I2t Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TJ = 25 °C TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate voltage to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGD IGD TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 W 2.0 1.5 10 20 15 10 1.2 1 V 0.7 0.2 0.1 mA mA A V UNITS SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.8 3 100 μs UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94499 Revision: 08-Jun-10 VS-12TTS08SPbF High Voltage Series Phase Control SCR, 8 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight 0.07 minimum Mounting torque maximum Marking device Case style D2PAK (SMD-220) 12 (10) 6 (5) oz. kgf ⋅ cm (lbf ⋅ in) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 1.5 62 0.5 2 g °C/W UNITS °C 12TTS08S Maximum Allowable Case T emperature (°C) 12T 08 TS R thJC (DC) = 1.5 K/ W 120 Maximum Average On-state Power Loss (W) 125 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Average On-state Current (A) Conduction Angle 180° 120° 90° 60° 30° R Limit MS 115 Conduc tion Angle 110 30° 105 60° 90° 120° 180° 100 0 2 4 6 8 10 Average On-state Current (A) 12T S T 08 TJ= 125°C Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum Allowable Case T emperature (°C) 12T S T 08 R thJC(DC) = 1.5 K/ W Maximum Average On-state Power Loss (W) 125 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 Average On-state Current (A) DC 180° 120° 90° 60° 30° R Limit MS Conduction Period 120 115 Conduction Period 110 30° 60° 90° 120° 180° DC 12 14 105 12T S T 08 TJ = 125°C 100 0 2 4 6 8 10 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Document Number: 94499 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-12TTS08SPbF High Voltage Series Vishay Semiconductors Phase Control SCR, 8 A Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 130 120 110 100 90 80 70 60 1 At Any R ated Load Condition And With R ated V RRM Applied F ollowing S urge. 150 140 130 120 110 100 90 80 70 60 Initial TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s Maximum Non R epetitive S urge Current Versus Puls T e rain Duration. Control Of Conduction May Not B Maintained. e Initial TJ= 125°C No Voltage R eapplied R ated VRRM R eapplied 12T S T 08 12T S T 08 10 100 50 0.01 0.1 Puls T e rain Duration (s ) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 12T S T 08 100 10 TJ= 25°C TJ= 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (°C/W) 10 S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 12T S T 08 0.01 0.0001 0.1 0.001 0.01 S quare Wave Pulse Duration (s) 0.1 1 Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94499 Revision: 08-Jun-10 VS-12TTS08SPbF High Voltage Series Phase Control SCR, 8 A ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 7 8 12 2 - T 3 T 4 S 5 08 6 S 7 TRL PbF 8 9 HPP product suffix Current rating (12.5 A) Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier Voltage rating (08 = 800 V) S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 Document Number: 94499 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1