Preliminary Data Sheet I2147 rev. C 03/99
SAFEIR Series
16TTS..FP
PHASE CONTROL SCR
TO-220 FULLPAK
Description/Features
The 16TTS..FP SAFE IR series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
VT
< 1.4V @ 10A
ITSM
= 200A
VRRM 800 to 1600V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Fully isolated package (VINS = 2500 VRMS)
UL E78996 approved
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge
Units
13.5
17
A
Capacitive input filter TA = 55°C,TJ = 125°C,
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics
IT(AV)
Sinusoidal
Package Outline
16TTS..FP Units
10
A
16
A
up to 1600
V
200
A
1.4
V
dv/dt
500
V/µs
di/dt
150
A/µs
- 40 to 125
°C
waveform
IRMS
VRRM/VDRM
ITSM
VT
T
J
@ 10 A, T J = 25°C
range
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TO-220 FULLPAK
1
16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
Voltage Ratings
VRRM, maximum
VDRM , maximum
IRRM/IDRM
Part Number
peak reverse voltage
V
peak direct voltage
V
125°C
mA
16TTS08FP
800
800
10
16TTS12FP
1200
1200
16TTS16FP
1600
1600
Absolute Maximum Ratings
Parameters
16TTS..FP
Units
IT(AV)
Max. Average On-state Current
10
A
IRMS
Max. RMS On-state Current
16
ITSM
Max.PeakOneCycleNon-Repetitive
170
Surge Current
200
I2t
Max. I2t for fusing
144
10ms Sine pulse, rated VRRMapplied
10ms Sine pulse, no voltage reapplied
A 2s
200
2
2
Max. I √t for fusing
VTM
Max. On-state Voltage Drop
1.4
V
rt
On-state Slope Resistance
24.0
mΩ
VT(TO) Threshold Voltage
1.1
V
IRM/IDM Max.Reverse and Direct
0.5
mA
Leakage Current
10
IL
Holding Current
2000
A √s
Typ.
Max.
@ 10A, TJ = 25°C
TJ = 125°C
TJ = 25 °C
--
100
100
150
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial I T=1A
mA
16TTS08FP, 16TTS12FP
16TTS16FP
mA
dv/dt Max. Rate of Rise of off-state Voltage
500
V/µs
di/dt
150
A/µs
Max. Rate of Rise of turned-on Current
t = 0.1 to 10ms, no voltage reapplied
TJ = 125 °C
200
2
Max. Latching Current
10ms Sine pulse, rated VRRMapplied
10ms Sine pulse, no voltage reapplied
2
I √t
IH
Conditions
@ TC = 95° C, 180° conduction half sine wave
Anode Supply = 6V, Resistive load
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
Triggering
Parameters
PGM
8.0
W
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current
1.5
A
- VGM Max. paek negative Gate Voltage
10
V
IGT
90
mA
Max. required DC Gate Current
to trigger
VGT
Conditions
16TTS..FP Units
Max. peak Gate Power
Max. required DC Gate Voltage
60
Anode supply = 6V, resistive load, TJ = 25°C
35
Anode supply = 6V, resistive load, TJ = 125°C
3.0
to trigger
Anode supply = 6V, resistive load, TJ = - 10°C
V
Anode supply = 6V, resistive load, TJ = - 10°C
2.0
Anode supply = 6V, resistive load, TJ = 25°C
1.0
Anode supply = 6V, resistive load, TJ = 125°C
VGD
Max. DC Gate Voltage not to trigger
0.2
IGD
Max. DC Gate Current not to trigger
2.0
TJ = 125°C, VDRM = rated value
mA
TJ = 125°C, VDRM = rated value
Switching
Parameters
Conditions
16TTS..FP Units
tgt
Typical turn-on time
trr
Typical reverse recovery time
tq
Typical turn-off time
0.9
µs
4
TJ = 25°C
TJ = 125°C
110
Thermal-Mechanical Specifications
Parameters
Conditions
16TTS..FP Units
TJ
Max. Junction Temperature Range
- 40 to 125
T stg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
1.5
to Case
RthJA Max. Thermal Resistance Junction
62
°C
°C/W
DC operation
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
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1.5
Mounting surface, smooth and greased
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
TO-220 FULLPAK
(94/V0)
3
16TTS..FP SAFEIR Series
130
16TTS..FP Series
R thJC (DC) = 1.5 °C/W
120
110
Conduction Angle
100
30°
60°
90°
90
120°
180°
80
0
2
4
6
8
10
12
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Preliminary Data Sheet I2147 rev. C 03/99
130
16TTS..FP Series
R thJC (DC) = 1.5 °C/W
120
110
Conduction Period
100
30°
90
120°
180°
0
2
10
RMS Limit
8
6
Conduction Angle
4
16TTS..FP Series
T J= 125°C
2
0
0
2
4
6
8
10
12
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
12
Initial T J= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
140
120
100
16TTS..FP Series
80
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4
14 16
18
DC
180°
120°
90°
60°
30°
20
15
RMS Limit
10
Conduction Period
5
16TTS..FP Series
T J = 125°C
0
0
4
8
12
16
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
1
10 12
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
160
8
25
Average On-state Current (A)
180
6
Fig. 2 - Current Rating Characteristics
18
14
4
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
16
DC
80
Average On-state Current (A)
180°
120°
90°
60°
30°
60°
90°
200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J= 125°C
No Voltage Reapplied
Rated V RRM Reapplied
180
160
140
120
100
16TTS..FP Series
80
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
Instantaneous On-state Current (A)
1000
16TTS..FP Series
100
10
T J= 25°C
T J= 125°C
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-state Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
D
D
D
D
D
= 0.50
= 0.33
= 0.25
= 0.17
= 0.08
0.1
Single Pulse
0.01
0.0001
16TTS..FP Series
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.1
(2)
(1)
Frequency Limited by PG(AV)
16TTS..FP Series
0.01
(3)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
Outline Table
10.6
H OLE ø 3.4
10.4
3.1
16.4
15.4
16.0
15.8
7.1
6.7
3.7
3 .2
2.8
2.6
13.7
13.5
3.3
3.1
10°
0.9
0.7
2.54 TYP.
2.54
TYP.
0.48
0.44
2.85
2.65
1.4
1.3
1.15
TYP.
1.05
R0.7 (2 PLACES)
4.8
4.6
R 0.5
Dimensions in millimeters (and inches)
5°± 0.5°
5°± 0.5°
Ordering Information Table
Device Code
16
T
T
S
16
FP
1
2
3
4
5
6
1
-
Current Rating, RMS value
2
-
Circuit Configuration:
3
-
Package:
2
(A)
1 (K) (G) 3
T = Single Thyristor
T = TO-220AC
6
4
-
Type of Silicon:
S = Converter Grade
08 = 800V
5
-
Voltage code: Code x 100 = V RRM
12 = 1200V
6
-
TO-220 FULLPAK
16 = 1600V
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
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Data and specifications subject to change without notice.
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