20ETS16PBF

VS-20ETS16PbF Vishay Semiconductors Input Rectifier Diode, 20 A FEATURES Base cathode 2 • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level RoHS COMPLIANT APPLICATIONS • Input rectification TO-220AC 1 Cathode 3 Anode • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VF at 10 A IFSM VRRM 1V 300 A 1600 V DESCRIPTION The VS-20ETS16PbF rectifier has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 16.3 THREE-PHASE BRIDGE 21 UNITS A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 10 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform VALUES 20 1600 300 1.0 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER VS-20ETS16PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1700 IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 20 250 300 316 442 4420 A2s A2s A UNITS Document Number: 93405 Revision: 02-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-20ETS16PbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.1 10.4 0.85 0.1 1.0 UNITS V m V mA Input Rectifier Diode, 20 A THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 40 to 150 1.3 °C/W 0.5 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) UNITS °C Mounting torque Marking device 20ETS16 150 150 RthJC (DC) = 1.3 °C/W RthJC (DC) = 1.3 °C/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 140 130 120 110 100 Ø 140 130 120 110 100 90 Conduction angle Ø Conduction period 30° 60° 90° 120° 180° DC 25 30 35 30° 90 60° 90° 120° 180° 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 2 - Current Rating Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93405 Revision: 02-Nov-10 VS-20ETS16PbF Input Rectifier Diode, 20 A Vishay Semiconductors 30 300 Maxiumum Average Forward Power Loss (W) 20 15 10 5 Peak Half Sine Wave Forward Current (A) 25 180° 120° 90° 60° 30° RMS limit 250 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 Ø Conduction angle TJ = 150 °C 0 100 50 0 4 8 12 16 20 24 1 10 100 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current 35 Maxiumum Average Forward Power Loss (W) 30 25 20 Peak Half Sine Wave Forward Current (A) DC 180° 120° 90° 60° 30° RMS limit 300 250 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 200 15 10 5 0 150 Ø Conduction period TJ = 150 °C 0 5 10 15 20 25 100 50 0.01 0.1 1 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 1000 TJ = 25 °C 100 TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Document Number: 93405 Revision: 02-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-20ETS16PbF Vishay Semiconductors 10 Input Rectifier Diode, 20 A ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 1 0.1 Single pulse 0.01 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 20 2 - E 3 T 4 S 5 16 6 PbF 7 Vishay Semiconductors product Current rating (20 = 20 A) Circuit configuration: E = TO-220AC Package: T = TO-220 Type of silicon: S = Standard recovery rectifier - Voltage rating (16 = 1600 V) Lead (Pb)-free LINKS TO RELATED DOCUMENTS 7 Dimensions Part marking information www.vishay.com/doc?95221 www.vishay.com/doc?95224 www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93405 Revision: 02-Nov-10 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1