SD453NR

SD453N/R Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 400/450 A FEATURES • • • • • • • • • • • • • 400/450 A B-8 PRODUCT SUMMARY IF(AV) High power fast recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version case style B-8 Maximum junction temperature 150 °C RoHS complaint Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS SD453N/R S20 400 TC 630 50 Hz 60 Hz Range 2.0 TJ 25 - 40 to 150 9300 9730 1200 to 2500 3.0 70 710 9600 10 050 V µs °C A S30 450 UNITS A °C IF(AV) IF(RMS) IFSM VRRM trr TJ ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 12 SD453N/R 16 20 25 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1200 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 1700 2100 2600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD453N/R Series Vishay High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current at case temperature SYMBOL TEST CONDITIONS SD453N/R S20 400 70 630 55 t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied 9300 9730 7820 Sinusoidal half wave, initial TJ = TJ maximum 8190 432 395 306 279 4320 1.00 1.09 0.80 0.74 2.20 710 52 9600 10 050 8070 8450 460 420 326 297 4600 0.95 1.04 0.60 mΩ 0.54 1.85 V kA2√s V kA2s A S30 450 UNITS A °C A °C Fast Recovery Diodes (Stud Version), 400/450 A IF(AV) 180° conduction, half sine wave IF(RMS) t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 2.0 3.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 150 °C Vr (V) trr AT 25 % IRRM (µs) 3.5 5.0 Qrr (µC) 250 380 Irr (A) 120 150 IFM trr t Qrr IRM(REC) dI/dt (A/µs) S20 S30 dir dt 50 - 50 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque ± 10 % Approximate weight Case style www.vishay.com 2 See dimensions (link at the end of datasheet) For technical questions, contact: ind-modules@vishay.com SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not-lubricated threads TEST CONDITIONS VALUES - 40 to 150 0.1 K/W 0.04 50 454 B-8 Document Number: 93176 Revision: 08-Apr-08 Nm g UNITS °C SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.010 0.014 0.017 0.025 0.042 RECTANGULAR CONDUCTION 0.008 0.014 0.019 0.026 0.042 TJ = TJ maximum K/W TEST CONDITIONS UNITS Vishay High Power Products Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case T emperature (°C) 140 130 120 110 100 90 80 70 S D453N/ R..S S 20 eries R thJC (DC) = 0.1 K/ W Maximum Allowable Case T emperature (°C) 150 150 140 130 120 110 100 90 80 70 60 0 100 S D453N/ R..S S 30 eries R thJC (DC) = 0.1 K/ W Conduction Angle Conduction Angle 180° 30° 200 60° 300 90° 120° 400 500 30° 60 0 60° 90° 120° 180° 50 100 150 200 250 300 350 400 450 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Maximum Allowable Case T emperature (°C) 150 140 130 120 110 100 90 80 70 60 50 0 100 200 300 400 500 600 700 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 30° 90° 60° 120° 180° DC Conduction Period Maximum Allowable Cas T e emperature (°C) 150 140 130 120 110 100 90 80 70 60 50 40 0 200 400 600 800 Average Forward Current (A) Fig. 4 - Current Ratings Characteristics 30° 60° 90° 120° 180° DC Conduc tion Period S D453N/ R 20 S ..S eries RthJC (DC) = 0.1 K/ W S D453N/ R 30 S ..S eries R thJC (DC) = 0.1 K/ W Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD453N/R Series Vishay High Power Products Maximum Average Forward Power Los (W) s 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 350 400 450 Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Peak Half Sine Wave Forward Current (A) 1000 900 800 700 600 DC 180° 120° 90° 60° 30° Conduction Angle Fast Recovery Diodes (Stud Version), 400/450 A Maximum Average Forward Power Loss (W) 1000 900 800 700 600 DC 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° R Limit MS 500 RMS Limit 400 Conduction Period 300 200 100 0 0 100 200 300 400 500 600 700 800 Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics S D453N/ R..S S 30 eries T = 150°C J S D453N/ R..S S 20 eries TJ = 150°C 9000 8000 7000 6000 5000 4000 3000 2000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 °C J @60 Hz 0.0083 s @50 Hz 0.0100 s 500 RMS Limit 400 300 200 100 0 0 100 200 300 400 500 600 700 Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Conduction Period S D453N/ R..S S 20 eries TJ = 150°C S D453N/ R..S S 20 eries 10 100 Number Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) Peak Half S Wave Forward Current (A) ine 800 700 600 500 400 300 200 100 0 0 100 200 300 400 500 Average Forward Current (A) Fig. 7 - Forward Power Loss Characteristics Conduction Angle 10000 9000 180° 120° 90° 60° 30° RMS Limit Maximum Non Repetitive S urge Current Vers Pulse T us rain Duration. Initial T = 150 °C J No Voltage Reapplied 8000 Rated VRRM Reapplied 7000 6000 5000 4000 3000 S D453N/ R..S S 20 eries S D453N/ R..S S 30 eries TJ = 150°C 2000 0.01 0.1 Pulse T rain Duration (s) 1 Fig. 10 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A Peak Half S Wave F ine orward Current (A) Vishay High Power Products 9000 Ins tantaneous Forward Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following S urge. 8000 Initial TJ= 150 °C @60 Hz 0.0083 s 7000 @50 Hz 0.0100 s 6000 5000 4000 3000 2000 1 10 100 Number Of Eq ual Amplitud e Half Cycle Current Pulses (N) 10000 S D453N/ R 20 S ..S eries 1000 TJ= 25°C T = 150°C J 100 0.5 S D453N/ R..S S 30 eries 1 1.5 2 2.5 3 3.5 Fig. 11 - Maximum Non-Repetitive Surge Current 10000 9000 8000 7000 6000 5000 4000 3000 2000 0.01 S D453N/ R..S S 30 eries Instantaneous Forward Voltage (V) Fig. 13 - Forward Voltage Drop Characteristics Peak Half S Wave Forward Current (A) ine Ins tantaneous Forward Current (A) Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial T = 150 °C J No Voltage Reapplied Rated VRRM Reapplied 10000 S D453N/ R 30 S ..S eries 1000 TJ= 25°C T = 150°C J 0.1 1 100 0.5 1 1.5 2 2.5 3 3.5 4 Pulse T rain Duration (s) Fig. 12 - Maximum Non-Repetitive Surge Current 1 Instantaneous Forward Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (K/W) 0.1 S teady S tate Value: RthJC = 0.1 K/ W (DC Operation) 0.01 S D453N/ R..S S S 20/ 30 eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 15 - Thermal Impedance ZthJC Characteristic Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD453N/R Series Vishay High Power Products 100 V FP Fast Recovery Diodes (Stud Version), 400/450 A Maximum Reverse Rec overy Charge - Qrr (µC) 800 I FM = 1000 A I T = 150°C J 700 600 S ine Pulse 80 Forward R ecovery (V) 500 A 60 500 400 150 A 40 TJ= 25°C 300 200 100 0 0 50 100 150 200 250 300 S D453N/ R..S S 20 eries T = 150 °C; V r > 100V J 20 S D453N/ R..S S 20 eries 0 0 400 800 1200 1600 2000 R ate Of R Of Forward Current - di/ dt (A/ us) ise Fig. 16 - Typical Forward Recovery Characteristics 100 V FP Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 19 - Recovery Charge Characteristics Maximum Reverse R ecovery Current - Irr (A) 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 S D453N/ R 20 S ..S eries T = 150 °C; V r > 100V J I FM = 1000 A S Pulse ine 500 A 150 A I T = 150°C J 80 Forward Rec overy (V) 60 40 T = 25°C J 20 S D453N/ R..S S 30 eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 17 - Typical Forward Recovery Characteristics Rate Of Fall Of Forwa rd Current - di/ dt (A/ µs) Fig. 20 - Recovery Current Characteristics 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 10 100 1000 I FM = 1000 A S Pulse ine 500 A 150 A Maximum R everse Rec overy T ime - T (µs) rr 5.5 5 4.5 4 3.5 3 2.5 2 10 S D453N/ R..S S 20 eries T = 150 °C; V r > 100V J Maximum Revers Recovery T e ime - T (µs) rr 6 S D453N/ R..S S 30 eries T = 150 °C, Vr > 100V J I FM = 1000 A S Pulse ine 500 A 150 A 100 1000 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 18 - Recovery Time Characteristics Fig. 21 - Recovery Time Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A Maximum Revers Rec overy Charge - Qrr (µC) e 1200 1000 800 500 A I FM = 1000 A S ine Pulse Vishay High Power Products 1E4 Peak Forward Current (A) 1500 2000 1000 600 400 200 100 50 Hz 600 150 A 1E3 3000 4000 6000 10000 tp S D453N/R..S S 20 eries S inusoidal Pulse T = 70°C, VRRM = 800V C d v/ d t = 1000V/ us 400 200 0 0 50 100 150 200 250 300 S D453N/ R..S S 30 eries T = 150 °C; Vr > 100V J 1E2 1E1 1E2 1E3 1E4 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 22 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) 550 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 S D453N/ R 30 S ..S eries T = 150 °C; V r > 100V J I FM = 1000 A S Pulse ine 500 A 150 A Pulse Basewidth (µs) Fig. 25 - Frequency Characteristics 1E4 10 joules per pulse 4 2 1 0.8 0.6 0.4 S D453N/ R..S S 20 eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ dt = 1000V/ µs; d i/ dt = 300A/ µs 6 Peak Forward Current (A) 1E3 tp 1E2 1E1 1E2 1E3 1E4 Rate Of F ll Of Forwa rd Current - d i/ dt (A/ µs) a Fig. 23 - Recovery Current Characteristics Pulse Basewidth (µs) Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 10 joules per p ulse Peak Forward Current (A) 1 0.6 0.4 2 4 Peak Forward Current (A) 6 tp 1E3 0.2 0.1 1E3 1500 2000 3000 4000 6000 600 1000 400 200 100 50 Hz tp S D453N/ R..S S 20 eries S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ dt = 1000V/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 S D453N/R..S S 20 eries T pezoidal Pulse ra T = 70°C, VRRM = 800V C d v/ dt = 1000V/us, d i/ dt = 300A/ us 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics Pulse Basewidth (µs) Fig. 27 - Frequency Characteristics Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD453N/R Series Vishay High Power Products 1E4 Fast Recovery Diodes (Stud Version), 400/450 A 1E4 Peak Forward Current (A) Peak Forward Current (A) S D453N/ R..S S 20 eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs di/ dt = 100A/ µs 4 2 1 10 joules per pulse 6 6000 1000 1500 2000 400 200 100 50 Hz 1E3 tp 0.4 0.6 1E3 3000 4000 6000 tp S D453N/ R..S S 30 eries S inusoida l Pulse T = 70°C, VRRM = 800V C d v/ d t = 1000V/ us 0.2 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E 2 1E3 1E 4 Pulse Basewidth (µs) Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 Puls Basewidth (µs) e Fig. 31 - Frequency Characteristics 1E4 Peak Forward Current (A) Peak Forward Current (A) tp 10 joules per pulse 4 2 6 1000 1E3 3000 4000 6000 600 400 200 1500 2000 100 50 Hz 1E3 0.8 0.6 1 S D453N/ R..S S 20 eries T rapezoida l Pulse T = 70°C, VRRM = 800V C d v/ dt = 1000V/ us, di/ dt = 100A/ us tp S D453N/ R..S S 30 eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ dt = 1000V/ µs; di/ dt = 300A/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 29 - Frequency Characteristics Puls Basewidth (µs) e Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 4 6 10 joules per pulse Peak Forward Current (A) 1 0.8 0.6 0.4 Peak F orward Current (A) 2 tp 1E3 0.2 0.1 S D453N/ R...S S 30 eries S inusoidal Pulse TJ = 150°C, VRRM = 800V d v/ d t = 1000V/ µs 1E3 1000 2000 3000 4000 400 600 200 100 50 Hz tp 1E2 1E1 1E2 1E3 1E4 1E2 1E1 S D453N/ R..S S 30 eries T rapezoidal Pulse T = 70°C, VRRM = 800V d v/ dt = 1000V/ us, di/ dt = 300A/ us 1E2 1E3 1E4 Pulse Bas ewidth (µs) Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 8 Puls Basewidth (µs) e Fig. 33 - Frequency Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A 1E4 1E4 Vishay High Power Products Peak Forward Current (A) Peak Forward Current (A) 10 joules per p ulse 6 4 2 1 tp 1E3 0.6 0.4 0.8 1E3 1500 2000 3000 4000 1000 600 400 200 100 50 Hz tp S D453N/ R..S S 30 eries T pezoidal Pulse ra TJ = 150°C, VRRM = 800V d v/ dt = 1000V/ µs; di/ dt = 100A/ µs S D453N/ R..S S 30 eries T rapezoidal Pulse T = 70°C, V RRM = 800V C d v/ dt = 1000V/ us, di/ dt = 100A/ us 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Pulse Basewidth (µs) Fig. 35 - Frequency Characteristics ORDERING INFORMATION TABLE Device code SD 1 45 2 3 3 N 4 25 5 S30 6 P 7 S 8 C 9 1 2 3 4 - Diode Essential part number 3 = Fast recovery N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 6 7 - Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) P = Stud base B-8 3/4" 16UNF-2A M = Stud base B-8 M24 x 1.5 8 -7 S = Isolated lead with silicon sleeve (red = Reverse polarity; blue = Normal polarity) None = Not isolated lead T = Threaded top terminal 3/8" 24UNF-2A 9 - C = Ceramic housing LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95303 Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors B-8 DIMENSIONS in millimeters (inches) Ceramic housing 26 (1.023) MAX. 10.5 (0.41) DIA. 5 (0.20) ± 0.3 (0.01) 12 (0.47) MIN. C.S. 70 mm2 245 (9.645) 255 (10.04) 38 (1.5) DIA. MAX. 115 (4.52) MIN. 47 (1.85) MAX. 80 (3.15) MAX. 27.5 (1.08) MAX. 21 (0.83) MAX. SW 45 3/4"-16UNF-2A * *For metric device: M24 x 1.5 - length 21 (0.83) MAX. contact factory Document Number: 95303 Revision: 11-Apr-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000