SD200NR

SD200N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V • High surge current capabilities • Stud cathode and stud anode version • Standard JEDEC types • Compression bonded encapsulations DO-205AC (DO-30) RoHS COMPLIANT • RoHS complaint • Lead (Pb)-free • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IF(AV) 200 A • Converters • Power supplies • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS SD200N/R 1600 to 2000 200 IF(AV) IF(RMS) IFSM I2 t VRRM TJ 50 Hz 60 Hz 50 Hz 60 Hz Range 1600 to 2000 - 40 to 180 TC 110 314 4700 4920 110 101 2400 150 kA2s V °C A 2400 UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 16 SD200N/R 20 24 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1600 2000 2400 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1700 2100 2500 15 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93541 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD200N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 200 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature IF(AV) Maximum average forward current at case temperature Maximum RMS forward current IF(RMS) DC at 95 °C case temperature t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied 180° conduction, half sine wave SYMBOL TEST CONDITIONS VALUES 200 110 220 100 314 4700 4920 3950 Sinusoidal half wave, initial TJ = TJ maximum 4140 110 101 78 71 1100 0.90 1.00 0.79 mΩ 0.64 1.40 V kA2√s V kA2s A UNITS A °C A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 630 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Maximum allowed mounting torque ± 10 % Approximate weight Case style See dimensions (link at the end of datasheet) SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not-lubricated threads TEST CONDITIONS SD200N/R 1600 to 2000 - 40 to 180 2400 - 40 to 150 UNITS °C - 55 to 200 0.23 K/W 0.08 14 120 DO-205AC (DO-30) Nm g www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93541 Revision: 17-Apr-08 SD200N/R Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 200 A ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.041 0.049 0.063 0.093 0.156 RECTANGULAR CONDUCTION TEST CONDITIONS 0.030 0.051 0.068 0.096 0.157 TJ = TJ maximum K/W UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case T emperature (°C) Maximum Allowable Case T emperature (°C) 180 170 160 150 140 130 120 110 S D200N/ R S eries RthJC (DC) = 0.23 K/ W 180 170 160 150 140 130 120 110 100 90 0 50 S D200N/ R S eries RthJC (DC) = 0.23 K/ W Conduction Angle Conduction Period 90° 60° 30° 120° 180° DC 30° 100 0 40 80 60° 90° 120° 180° 120 160 200 240 100 150 200 250 300 350 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 300 250 200 150 180° 120° 90° 60° 30° RMS Limit Conduction Angle .08 =0 A hS Rt /W 2K 0.1 W K/ 2 0. W K/ aR elt -D K/ 0.4 W K/ W 0. 3 0.6 K/W 0.8 K/W 100 50 0 0 50 100 150 200 SD200N/R Series Tj = Tj max 1.4 K /W 1.8 K/W 250 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 93541 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD200N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 200 A Maximum Average Forward Power Loss (W) 400 350 300 250 200 RMS Limit DC 180° 120° 90° 60° 30° W K/ 08 0. = A W hS K/ Rt 12 0. ta el -D R 0.2 K/ W 0.3 K/ W 0.4 K/W 0.6 K/W 150 100 50 0 0 Conduction Period SD200N/R Series Tj = Tj max 0.8 K/W 1.4 K /W 1.8 K/W 50 100 150 200 250 300 350 40 60 80 100 120 140 160 180 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) 4500 4000 3500 3000 2500 2000 1500 1000 1 Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5000 4500 4000 3500 3000 2500 2000 1500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj max No Voltage Reapplied Rated Vrrm Reapplied SD200N/R Series SD200N/R Series 10 100 1000 0.01 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous Forward Current (A) SD200N/R Series 1000 Tj = 25 °C Tj = Tj max 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93541 Revision: 17-Apr-08 SD200N/R Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 200 A T ransient T hermal Impedanc e Z thJC (K/ W) 1 S teady S tate Value: R thJC = 0.23 K/ W (DC Operation) 0.1 S D200N/ R S eries 0.01 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic ORDERING INFORMATION TABLE Device code SD 1 20 2 0 3 N 4 24 5 P 6 C 7 1 2 3 4 - Diode Essential part number 0 = Standard recovery N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 6 7 - Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A M = Stud base DO-205AC (DO-30) M12 x 1.75 - C = Ceramic housing For metric device M12 x 1.75 contact factory LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95302 Document Number: 93541 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-205AC (DO-30) DIMENSIONS in millimeters (inches) Ceramic housing 16.5 (0.65) MAX. 2.6 (0.10) MAX. 6.5 (0.26) MIN. 35 (1.38) MAX. DIA. 8.5 (0.33) NOM. C.S. 16 mm2 (0.015 s.i.) 157 (6.18) 170 (6.69) DIA. 22.5 (0.88) MAX. 55 (2.16) MIN. SW 27 12.5 (0.49) MAX. 21 (0.82) MAX. 1/2"-20UNF-2A* *For metric device: M12 x 1.75 contact factory Document Number: 95302 Revision: 11-Apr-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000