SI1034X

Si1034X New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 5 @ VGS = 4.5 V 20 7 @ VGS = 2.5 V 9 @ VGS = 1.8 V 10 @ VGS = 1.5 V ID (mA) 200 175 150 50 1.5 V Rated FEATURES D D D D D D Low-Side Switching Low On-Resistance: 5 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns (typ) 1.5-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: L D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (diode conduction) Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 S-03201—Rev. A, 12-Mar-01 www.vishay.com TA = 25_C TA = 85_C PD TJ, Tstg ESD TA = 25_C TA = 85_C ID IDM IS 450 280 145 –55 to 150 2000 Symbol VDS VGS 5 secs 20 Steady State Unit V "5 190 140 650 380 250 130 180 130 mA mW _C V 1 Si1034X Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "2.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 200 mA VGS = 2.5 V, ID = 175 m A Drain-Source On-State Resistancea rDS(on) VGS = 1.8 V, ID = 150 m A VDS = 1.5 V, ID = 40 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 200 mA IS = 150 mA, VGS = 0 V 0.5 1.2 250 5 7 9 10 S V W 0.40 "0.5 "1.0 1 1.2 "1.0 "3.0 500 10 mA nA mA mA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W VDS = 10 V, VGS = 4.5 V, ID = 150 mA 750 75 225 50 25 50 25 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 0.5 VGS = 5 thru 1.8 V 0.4 I D – Drain Current (mA) I D – Drain Current (A) 600 TJ = –55_C 500 25_C 400 125_C 300 Transfer Characteristics 0.3 0.2 200 0.1 1V 0.0 0 1 2 3 4 5 6 100 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71427 S-03201—Rev. A, 12-Mar-01 2 Si1034X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current 40 r DS(on) – On-Resistance ( W ) 100 VGS = 0 V f = 1 MHz 30 C – Capacitance (pF) 80 Ciss 60 Vishay Siliconix Capacitance 20 40 Coss VGS = 1.8 V 10 VGS = 2.5 V VGS = 4.5 V 0 0 50 100 150 200 250 20 0 0 Crss 4 8 12 16 20 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 150 mA 4 1.60 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance (W ) (Normalized) 1.40 VGS = 4.5 V ID = 200 mA 1.20 VGS = 1.8 V ID = 175 mA 3 2 1.00 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 r DS(on) – On-Resistance ( W ) TJ = 125_C I S – Source Current (mA) 50 On-Resistance vs. Gate-to-Source Voltage ID = 200 mA 40 ID = 175 mA 30 100 TJ = 25_C 10 TJ = 50_C 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71427 S-03201—Rev. A, 12-Mar-01 www.vishay.com 3 Si1034X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 –0.0 1.5 –0.1 1.0 VGS = 2.8 V –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 500_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71427 S-03201—Rev. A, 12-Mar-01