SI1551DL_10

Si1551DL Vishay Siliconix Complementary 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 1.9 at VGS = 4.5 V 3.7 at VGS = 2.7 V 4.2 at VGS = 2.5 V 0.995 at VGS = - 4.5 V P-Channel - 20 1.600 at VGS = - 2.7 V 1.800 at VGS = - 2.5 V ID (A) 0.30 0.22 0.21 - 0.44 - 0.34 - 0.32 0.52 0.72 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code RD XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1551DL-T1-E3 (Lead (Pb)-free) Si1551DL-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 2 5 G2 D2 3 4 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.25 0.30 0.16 0.30 0.22 0.6 0.23 0.27 0.14 - 0.25 0.30 0.16 - 55 to 150 0.29 0.21 5s Steady State 20 ± 12 - 0.44 - 0.31 - 1.0 - 0.23 0.27 0.14 W °C - 0.41 - 0.30 A 5s P-Channel Steady State - 20 Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 °C/W Unit Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 www.vishay.com 1 Si1551DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = - 20 V, VGS = 0 V, TJ = 85 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 0.29 A VGS = - 4.5 V, ID = - 0.41 A Drain-Source On-State Resistancea RDS(on) VGS = 2.7 V, ID = 0.1 A VGS = - 2.7 V, ID = - 0.25 A VGS = 2.5 V, ID = 0.1 A VGS = - 2.5 V, ID = - 0.25 A Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.41 A N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.29 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω IF = 0.23 A, dI/dt = 100 A/µs IF = - 0.23 A, dI/dt = 100 A/µs P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.72 0.52 0.22 0.11 0.13 0.14 23 7.5 30 20 10 8.5 15 12 20 25 40 15 60 40 20 17 30 24 40 40 ns 1.5 1.8 nC gfs VSD VDS = 10 V, ID = 0.29 A VDS = - 10 V, ID = - 0.41 A IS = 0.23 A, VGS = 0 V IS = - 0.23 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 - 1.0 1.55 0.850 2.8 1.23 3.0 1.4 0.3 0.8 0.8 - 0.8 1.2 - 1.2 1.9 0.995 3.7 1.600 4.2 1.800 S V Ω 0.6 - 0.6 1.5 - 1.5 ± 100 ± 100 1 -1 5 -5 A µA V nA Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 Si1551DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 VGS = 5 V thru 3.5 V 0.5 3V ID - Drain Current (A) 0.4 ID - Drain Current (A) 0.4 25 °C 125 °C 0.3 0.6 TC = - 55 °C 0.5 0.3 2.5 V 0.2 2V 0.1 1.5 V 0.0 0.0 0.2 0.1 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 6 100 Transfer Characteristics 5 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) VGS = 2.5 V 4 VGS = 2.7 V 3 VGS = 4.5 V 2 80 Ciss 60 40 Coss 20 1 Crss 0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 0.29 A 4 RDS(on) - On-Resistance (Normalized) 1.8 VGS = 4.5 V ID = 0.29 A Capacitance VGS - Gate-to-Source Voltage (V) 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 www.vishay.com 3 Si1551DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 6 5 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 4 ID = 0.29 A 3 TJ = 150 °C 2 TJ = 25 °C 0.1 0.0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.2 5 On-Resistance vs. Gate-to-Source Voltage 0.1 ID = 250 µA VGS(th) Variance (V) Power (W) 0.0 4 3 - 0.1 2 - 0.2 1 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 Time (s) 10 100 600 TJ - Junction Temperature (°C) Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Single Pulse Power 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 Si1551DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 VGS = 5 V thru 3 V TC = - 55 °C 0.8 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 0.6 0.8 25 °C 125 °C 0.6 1.0 0.4 2V 0.2 1V 0.0 0.0 1.5 V 0.4 0.2 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 3.0 100 Transfer Characteristics 2.5 R DS(on) - On-Resistance (Ω) C - Capacitance (pF) 80 Ciss 2.0 VGS = 2.5 V 1.5 VGS = 2.7 V 60 40 Coss 1.0 VGS = 4.5 V 0.5 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 Capacitance www.vishay.com 5 Si1551DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 VDS = 10 V ID = 0.41 A 4 R DS(on) - On-Resistance 1.4 1.6 VGS = 4.5 V ID = 0.41 A VGS - Gate-to-Source Voltage (V) (Normalized) 3 1.2 2 1.0 1 0.8 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 1 3.0 On-Resistance vs. Junction Temperature ID = 0.41 A 2.5 R DS(on) - On-Resistance (Ω) 1.2 I S - Source Current (A) 2.0 TJ = 150 °C TJ = 25 °C 1.5 1.0 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 5 On-Resistance vs. Gate-to-Source Voltage 0.3 VGS(th) Variance (V) ID = 250 µA 0.2 Power (W) 4 3 0.1 2 0.0 1 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power www.vishay.com 6 Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 Si1551DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71078. Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 www.vishay.com 7 Package Information Vishay Siliconix SC 70: 6 LEADS MILLIMETERS 6 5 4 E1 E 1 2 3 -Be e1 D -Ac A2 A L A1 b INCHES Min 0.035 – 0.031 0.006 0.004 0.071 0.071 0.045 Dim A A1 A2 b c D E E1 e e1 L Min 0.90 – 0.80 0.15 0.10 1.80 1.80 1.15 Nom – – – – – 2.00 2.10 1.25 0.65BSC Max 1.10 0.10 1.00 0.30 0.25 2.20 2.40 1.35 Nom – – – – – 0.079 0.083 0.049 0.026BSC Max 0.043 0.004 0.039 0.012 0.010 0.087 0.094 0.053 1.20 0.10 1.30 0.20 7_Nom 1.40 0.30 0.047 0.004 0.051 0.008 7_Nom 0.055 0.012 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 Document Number: 71154 06-Jul-01 www.vishay.com 1 AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 G1 D2 1 6 5 D1 THERMAL PERFORMANCE 2 G2 S2 3 4 Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300_C/W typical, 350_C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady state. Maximum ratings are 460_C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. Document Number: 71237 12-Dec-03 www.vishay.com 1 AN814 Vishay Siliconix SC-70 (6-PIN) Room Ambient 25 _C PD + TJ(max) * TA Rq JA 500 Elevated Ambient 60 _C PD + Rq JA Thermal Resistance (C/W) Dual EVB 400 TJ(max) * TA o* o PD + 150 Co 25 C 400 C W o* o PD + 150 Co 60 C 400 C W 300 PD + 312 mW PD + 225 mW 200 NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. Testing To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of RθJA for the dual 6-pin SC-70 are as follows: 100 1” Square FR4 PCB 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 Time (Secs) FIGURE 2. Comparison of Dual SC70-6 on EVB and 1” Square FR4 PCB. LITTLE FOOT SC-70 (6-PIN) 1) Minimum recommended pad pattern (see Figure 2) on the EVB of 0.5 inches x 0.6 inches. 2) Industry standard 1” square PCB with maximum copper both sides. 518_C/W 413_C/W The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). www.vishay.com 2 Document Number: 71237 12-Dec-03 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 (1.702) (2.438) 0.016 (0.406) 0.026 (0.648) 0.010 (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE www.vishay.com 18 (1.143) 0.096 0.045 (0.648) 0.026 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1