Si1917EDH
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.370 @ VGS = –4.5 V –12 0.575 @ VGS = –2.5 V 0.800 @ VGS = –1.8 V
ID (A)
–1.15 –0.92 –0.78
D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching D PA Switch D Level Switch
D
D
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code DB G2 XX YY 3 kW G Lot Traceability and Date Code Part # Code G 3 kW
G1
2
5
D2
3
4
S2
Top View
S
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –0.83 IDM IS –0.61 0.73 0.38 –55 to 150 –3 –0.47 0.57 0.30 W _C –0.73 A
Symbol
VDS VGS
5 secs
Steady State
–12 "12
Unit
V
–1.15
–1.00
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71414 S-03174—Rev. A, 07-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
130 170 80
Maximum
170 220 100
Unit
_C/W
1
Si1917EDH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = –100 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = –9.6 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –9.6 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –1.0 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –0.81 A VGS = –1.8 V, ID = –0.2 A Forward Transconductancea gfs VSD VDS = –10 V, ID = –1.0 A IS = –0.47 A, VGS = 0 V –2 0.300 0.470 0.660 1.7 –0.85 –1.2 0.370 0.575 0.800 S V W –0.45 "1.5 "10 –1 –5 V mA mA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –6 V, RL = 12 W ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W VDS = –6 V, VGS = –4.5 V, ID = –1.0 A 1.3 0.31 0.31 0.17 0.47 0.96 1.0 0.26 0.71 1.4 1.5 ms 2.0 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10 10,000 1,000 I GSS – Gate Current (mA) 8 I GSS – Gate Current (m A) 100 10 1 0.1 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 TJ = 150_C
Gate Current vs. Gate-Source Voltage
6
4
2
VGS – Gate-to-Source Voltage (V) www.vishay.com
VGS – Gate-to-Source Voltage (V) Document Number: 71414 S-03174—Rev. A, 07-Mar-01
2
Si1917EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
3.0 VGS = 5 thru 3 V 2.5 2.5 V I D – Drain Current (A) 2.5 3.0 TC = –55_C 25_C
Vishay Siliconix
Transfer Characteristics
I D – Drain Current (A)
2.0
2.0
125_C
1.5
2V
1.5
1.0 1.5 V
1.0
0.5
0.5
0.0 0 1 2 3 4
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.2 VGS = 1.8 V C – Capacitance (pF) 0.9 200
Capacitance
r DS(on) – On-Resistance ( W )
160 Ciss 120
VGS = 2.5 V 0.6
80 Coss 40 Crss
VGS = 4.5 V 0.3
0.0 0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
5 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = –1.0 A 1.6
On-Resistance vs. Junction Temperature
3
r DS(on) – On-Resistance (W ) (Normalized)
4
1.4
VGS = 4.5 V ID = –1.0 A
1.2
2
1.0
1
0.8
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Document Number: 71414 S-03174—Rev. A, 07-Mar-01
www.vishay.com
3
Si1917EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
3 2.0
On-Resistance vs. Gate-to-Source Voltage
1
r DS(on) – On-Resistance ( W )
TJ = 150_C I S – Source Current (A)
1.6
1.2
ID = –1.0 A
0.8
TJ = 25_C
0.4
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
0.0 0 1 2 3 4 5
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.3 ID = 100 mA 0.2 V GS(th) Variance (V) 5
Single Pulse Power, Junction-to-Ambient
4
0.1
Power (W)
3
0.0
2
–0.1
1
–0.2 –50
–25
0
25
50
75
100
125
150
0 0.01
0.1
1 Time (sec)
10
100
600
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1
PDM
0.05
t1 t2 1. Duty Cycle, D = t1 t2
0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
2. Per Unit Base = RthJA = 170_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71414 S-03174—Rev. A, 07-Mar-01
Si1917EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Vishay Siliconix
0.2 0.1 0.1 0.05
0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
Document Number: 71414 S-03174—Rev. A, 07-Mar-01
www.vishay.com
5
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