SI1563EDH-T1-E3

New Product Si1563EDH Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V 0.490 at VGS = - 4.5 V P-Channel - 20 0.750 at VGS = - 2.5 V 1.10 at VGS = - 1.8 V ID (A) 1.28 1.13 1.0 - 1.0 - 0.81 - 0.67 FEATURES • TrenchFET® Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package Pb-free Available RoHS* COMPLIANT APPLICATIONS • Load Switching • PA Switch • Level Switch D1 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code EA G1 2 5 G2 XX YY G1 Lot Traceability and Date Code Part # Code 1k S2 G2 3k D2 3 4 S2 N-Channel Top View Ordering Information: Si1563EDH-T1 Si1563EDH-T1-E3 (Lead (Pb)-free) S1 P-Channel D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C Maximum Power Dissipationa TA = 85 °C Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.61 0.74 0.38 1.28 0.92 4.0 0.48 0.57 0.30 - 0.61 0.30 0.16 - 55 to 150 5s Steady State 20 ± 12 1.13 0.81 - 1.0 - 0.72 - 3.0 - 0.48 0.57 0.3 W °C 5s P-Channel Steady State - 20 ± 12 - 0.88 - 0.63 A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 130 170 80 Maximum 170 220 100 °C/W Unit * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71416 S-80257-Rev. C, 04-Feb-08 www.vishay.com 1 New Product Si1563EDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 µA VDS = VGS, ID = - 100 µA VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 °C VDS = - 16 V, VGS = 0 V, TJ = 85 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 1.13 A VGS = - 4.5 V, ID = - 0.88 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 0.99 A VGS = - 2.5 V, ID = - 0.71 A VGS = 1.8 V, ID = 0.20 A VGS = - 1.8 V, ID = - 0.20 A Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.65 1.2 0.2 0.3 0.23 0.3 45 150 85 480 350 840 210 850 70 230 130 720 530 1200 320 1200 ns 1.0 1.8 nC gfs VSD VDS = 10 V, ID = 1.13 A VDS = - 10 V, ID = - 0.88 A IS = 0.48 V, VGS = 0 V IS = - 0.48 V, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 -2 0.220 0.400 0.281 0.610 0.344 0.850 2.6 1.5 0.8 - 0.8 1.2 - 1.2 0.280 0.490 0.360 0.750 0.450 1.10 S V Ω 0.45 - 0.45 ±1 ±1 ± 10 ± 10 1 -1 5 -5 A µA V µA mA Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 New Product Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10000 1000 I GSS - Gate Current (mA) 8 I GSS - Gate Current (µA) 100 10 1 0.1 TJ = 25 °C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 6 TJ = 150 °C 4 2 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage 2.0 VGS = 5 thru 2 V 2.0 Gate-Current vs. Gate-Source Voltage TC = - 55 °C 25 °C 1.5 125 °C 1.0 I D - Drain Current (A) 1.5 V 1.0 0.5 1V 0.0 0 1 2 3 4 I D - Drain Current (A) 1.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.6 140 120 C - Capacitance (pF) 100 Transfer Characteristics 0.5 r DS(on) - On-Resistance (Ω) 0.4 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V Ciss 80 60 40 Coss 20 0 Crss 0.3 0.2 0.1 0.0 0.0 0.5 1.0 ID - Drain Current (A) 1.5 2.0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 71416 S-80257-Rev. C, 04-Feb-08 Capacitance www.vishay.com 3 New Product Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 VDS = 10 V ID = 1.28 A r DS(on) - On-Resistance 1.6 VGS = 4.5 V ID = 1.13 A VGS - Gate-to-Source Voltage (V) 4 1.4 (Normalized) 3 1.2 2 1.0 1 0.8 0 0.0 0.3 0.6 0.9 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 2 TJ = 150 °C r DS(on) - On-Resistance (Ω) 1 I S - Source Current (A) 0.6 On-Resistance vs. Junction Temperature 0.5 0.4 ID = 1.13 A 0.3 TJ = 25 °C 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.0 0 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.2 ID = 100 µA 5 On-Resistance vs. Gate-to-Source Voltage 0.1 V GS(th) Variance (V) 4 0.0 Power (W) 3 - 0.1 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com 4 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 New Product Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 PDM 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71416 S-80257-Rev. C, 04-Feb-08 www.vishay.com 5 New Product Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 10000 1000 I GSS - Gate Current (mA) I GSS - Gate Current (µA) 6 100 10 1 0.1 0.01 0 0 8 12 VGS - Gate-to-Source Voltage (V) 4 16 0.001 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) TJ = 150 °C 4 2 TJ = 25 °C Gate-Current vs. Gate-Source Voltage 3.0 VGS = 5 thru 3.5 V 2.5 I D - Drain Current (A) 3V 2.5 I D - Drain Current (A) 3.0 Gate-Current vs. Gate-Source Voltage TC = - 55 °C 25 °C 2.0 2.5 V 2.0 125 °C 1.5 1.5 2V 1.0 1.0 0.5 1.5 V 1V 0.5 0.0 0 1 2 3 4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 1.6 VGS = 1.8 V r DS(on) - On-Resistance (Ω) 1.2 C - Capacitance (pF) 120 160 Transfer Characteristics Ciss VGS = 2.5 V 0.8 80 VGS = 4.5 V 0.4 40 Coss Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance www.vishay.com 6 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 New Product Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 VDS = 10 V ID = 1 A r DS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V ID = 0.88 A VGS - Gate-to-Source Voltage (V) 4 1.4 3 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 2 1.6 On-Resistance vs. Junction Temperature 1 I S - Source Current (A) r DS(on) - On-Resistance (Ω) TJ = 150 °C 1.2 ID = 0.88 A 0.8 TJ = 25 °C 0.4 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 0.00 - 0.05 - 0.10 - 0.15 - 50 0 0.01 1 Power (W) 3 ID = 100 µA 5 On-Resistance vs. Gate-to-Source Voltage 4 2 - 25 0 25 50 75 100 125 150 0.1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient Document Number: 71416 S-80257-Rev. C, 04-Feb-08 www.vishay.com 7 New Product Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71416. www.vishay.com 8 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1