Si3455ADV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−30
rDS(on) (W)
0.100 @ VGS = −10 V 0.170 @ VGS = −4.5 V
ID (A)
−3.5 −2.7
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(4) S
2
2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free) Marking Code: A5xxx (1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−30 "20
Unit
V
−3.5 −2.8 −20 −1.7 2.0 1.3 −55 to 150
−2.7 −2.1 A
−0.95 1.14 0.73 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71090 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 30
Maximum
62.5 110 36
Unit
_C/W
1
Si3455ADV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −10 V VGS = −10 V, ID = −3.5 A VGS = −4.5 V, ID = −2.7 A VDS = −15 V, ID = −3.5 A IS = −1.7 A, VGS = 0 V −20 0.080 0.140 6 −0.8 −1.2 0.100 0.170 −1.0 −3.0 "100 −1 −5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W 15 V, ID ^ −1 A, VGEN = −10 V, Rg = 6 W VDS = −15 V, VGS = −10 V, ID = −3.5 A 8.5 2.2 1.5 10 7 20 10 30 20 15 35 20 60 ns 13 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 7 V 16 I D − Drain Current (A) 5V 12 I D − Drain Current (A) 6V 16 20 TC = −55_C 25_C
Transfer Characteristics
12 125_C 8
8 4V 4 3V 0 0.0
4
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 7 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)
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Document Number: 71090 S-40424—Rev. C, 15-Mar-04
Si3455ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30 r DS(on) − On-Resistance ( W ) 700 600 C − Capacitance (pF) 0.24 VGS = 4.5 V 0.18 500 400 300 200 0.06 100 Crss 0.00 0 4 8 12 16 20 0 0 6 12 18 24 30 Coss Ciss
Capacitance
0.12
VGS = 10 V
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 3.5 A 8 rDS(on) − On-Resiistance (Normalized) 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 3.5 A
6
1.2
4
1.0
2
0.8
0 0 3 6 9 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.24 0.30
On-Resistance vs. Gate-to-Source Voltage
ID = 3.5 A 0.18
0.12
TJ = 25_C
0.06
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 71090 S-40424—Rev. C, 15-Mar-04
www.vishay.com
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Si3455ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 0.2 0.0 −0.2 −0.4 −50 20 15 10 5 30 25
Single Pulse Power
−25
0
25
50
75
100
125
150
0 10−3
10−2
10−1
1
10
100
600
TJ − Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 71090 S-40424—Rev. C, 15-Mar-04
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