SI4431ADY

Si4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 0.052 @ VGS = - 4.5 V - 5.5 FEATURES ID (A) - 7.2 rDS(on) (W) 0.030 @ VGS = - 10 V D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 5.8 IDM IS - 2.1 2.5 1.6 - 55 to 150 - 30 - 1.3 1.35 0.87 W _C - 4.2 A Symbol VDS VGS 10 secs Steady State - 30 "20 Unit V - 7.2 - 5.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71803 S-95713—Rev. C, 18-Feb-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 35 75 17 Maximum 50 92 25 Unit _C/W 1 Si4431ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V ID( ) D(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 10 V, ID = - 7.2 A rDS( ) DS(on) gfs VSD VGS = - 4.5 V, ID = - 5.0 A VDS = - 15 V, ID = - 7.2 A IS = - 2.1 A, VGS = 0 V - 30 -7 0.024 0.040 14 - 0.78 - 1.1 0.030 0.052 - 1.0 "100 -1 - 10 V nA mA A A W S V Symbol Test Condition Min Typ Max Unit On-State On State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 5 V, ID = - 7.2 A 12 4.7 3.7 12 15 40 20 30 20 20 60 25 80 ns 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 4V 18 12 12 TC = 125_C 25_C 0 - 55_C 3 4 5 6 3V 6 0 0 1 2 3 4 5 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71803 S-95713—Rev. C, 18-Feb-02 Si4431ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 2000 Capacitance C - Capacitance (pF) 0.08 1600 Ciss 0.06 VGS = 4.5 V 1200 0.04 VGS = 10 V 0.02 800 Coss 400 Crss 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.2 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.2 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 9 12 15 18 21 24 1.2 4 1.0 2 0.8 0 0 3 6 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 10 0.15 ID = 7.2 A 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71803 S-95713—Rev. C, 18-Feb-02 www.vishay.com 3 Si4431ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 40 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 32 24 0.0 16 - 0.2 8 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 75_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71803 S-95713—Rev. C, 18-Feb-02