SI4539ADY-T1

Si4539ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N-Channel 30 rDS(on) (W) 0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V 0.053 @ VGS = - 10 V ID (A) 5.9 4.9 - 4.9 - 3.7 P-Channel P Channel - 30 0.090 @ VGS = - 4.5 V D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4539ADY Si4539ADY-T1 (with Tape and Reel) S1 N-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.7 2.0 1.3 0.9 1.1 0.7 - 55 to 150 P-Channel 10 secs Steady State - 30 "20 V - 3.7 - 2.9 A - 1.7 2 1.3 - 0.9 1.1 0.7 W _C Symbol VDS VGS 10 secs Steady State 30 "20 Unit 5.9 4.7 4.4 3.6 30 - 4.9 - 3.9 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71131 S-03951—Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF P-Channel Typ 52 90 32 Symbol Typ 50 90 32 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W 2-1 Si4539ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = - 24 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currenta VDS w 5 V, VGS = 10 V ID( ) D(on) VDS p - 5 V, VGS = - 10 V VGS = 10 V, ID = 5.9 A Drain-Source On-State Drain Source On State Resistancea VGS = - 10 V, ID = - 4.9 A rDS( ) DS(on) VGS = 4.5 V, ID = 4.9 A VGS = - 4.5 V, ID = - 3.7 A Forward Transconductancea VDS = 15 V, ID = 5.9 A gf fs VDS = - 15 V, ID = - 4.9 A IS = 1.7 A, VGS = 0 V VSD IS = - 1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 - 30 0.032 0.043 0.042 0.075 15 9 0.80 - 0.80 1.2 - 1.2 V S 0.036 0.053 0.053 0.090 W A 1.0 V - 1.0 "100 "100 1 -1 5 -5 mA nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge otal Gate Charge Qg N-Channel VDS = 15 V, VGS = 10 V, ID = 5.9 A P-Channel P Channel VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A 15 V, 10 V, 4.9 P-Ch N-Ch P-Ch N-Ch Gate-Drain Gate Drain Charge Qgd d P-Ch N-Ch Gate Resistance Rg P-Ch N-Ch Turn-On Turn On Delay Time td( ) d(on) N-Channel VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W P Channel P-Channel VDD = - 15 V, RL = 15 W 1V ID ^ - 1 A, VGEN = - 10 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 1.7 A, di/dt = 100 A/ms trr IF = - 1.7 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.5 5 6 7 14 10 30 40 5 20 30 30 13 15 2.3 nC nC 4 2 2.0 2.2 12.6 12 15 25 20 60 80 10 40 60 60 ns W 20 25 Gate-Source Gate Source Charge Qgs Rise Time tr Turn-Off Turn Off Delay Time td( ff) d(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71131 S-03951—Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) 4V I D - Drain Current (A) 24 30 TC = - 55_C 25_C NCHANNEL Transfer Characteristics 18 18 125_C 12 12 6 3V 6 2V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 1000 Capacitance 0.06 VGS = 4.5 V 0.04 VGS = 10 V C - Capacitance (pF) 800 Ciss 600 400 0.02 200 Crss 0.00 0 6 12 18 24 30 0 0 6 12 Coss 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5.9 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.9 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71131 S-03951—Rev. B, 26-May-03 www.vishay.com 2-3 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S - Source Current (A) 0.08 NCHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) ID = 5.9 A 0.06 10 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 Power (W) 40 30 - 0.2 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71131 S-03951—Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 NCHANNEL 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 7 V 24 5V I D - Drain Current (A) 18 I D - Drain Current (A) 18 6V 24 30 PCHANNEL Transfer Characteristics TC = - 55_C 25_C 125_C 12 12 4V 6 3V 0 0.0 6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 1500 Capacitance 0.15 C - Capacitance (pF) 1200 Ciss 900 0.10 VGS = 4.5 V 600 Coss VGS = 10 V 0.05 300 Crss 0.00 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 71131 S-03951—Rev. B, 26-May-03 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.9 A 8 1.6 VGS = 10 V ID = 4.9 A 1.4 PCHANNEL On-Resistance vs. Junction Temperature 6 r DS(on) - On-Resistance (W ) (Normalized) 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.40 0.35 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.30 0.25 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Gate-to-Source Voltage ID = 4.9 A TJ = 25_C 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 50 Single Pulse Power 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 40 30 0.2 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) www.vishay.com 2-6 Document Number: 71131 S-03951—Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 PCHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71131 S-03951—Rev. B, 26-May-03 www.vishay.com 2-7