Si4539ADY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
RDS(on) (Ω)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
ID (A)
0.036 at VGS = 10 V
5.9
0.053 at VGS = 4.5 V
4.9
0.053 at VGS = - 10 V
- 4.9
0.090 at VGS = - 4.5 V
- 3.7
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Top View
Ordering Information: Si4539ADY-T1-E3 (Lead (Pb)-free)
Si4539ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
10 s
P-Channel
Steady State
10 s
Steady State
Drain-Source Voltage
VDS
30
- 30
Gate-Source Voltage
VGS
± 20
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
PD
V
5.9
4.4
- 4.9
- 3.7
4.7
3.6
- 3.9
- 2.9
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
30
1.7
0.9
- 1.7
- 0.9
2.0
1.1
2
1.1
1.3
0.7
1.3
0.7
TJ, Tstg
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
P-Channel
Typ.
Max.
Typ.
Max.
50
62.5
52
62.5
90
110
90
110
32
40
32
40
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71131
S09-0868-Rev. C, 18-May-09
www.vishay.com
1
Si4539ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µA
N-Ch
1.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.0
VDS = 0 V, VGS = ± 20 V
N-Ch
± 100
VDS = 0 V, VGS = ± 20 V
P-Ch
± 100
VDS = 24 V, VGS = 0 V
N-Ch
1
V
VDS = - 24 V, VGS = 0 V
P-Ch
-1
VDS = 24 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 24 V, VGS = 0 V, TJ = 55 °C
P-Ch
-5
ID(on)
RDS(on)
gfs
VSD
VDS ≥ 5 V, VGS = 10 V
N-Ch
30
VDS ≤ - 5 V, VGS = - 10 V
P-Ch
- 30
VGS = 10 V, ID = 5.9 A
N-Ch
0.032
VGS = - 10 V, ID = - 4.9 A
P-Ch
0.043
0.053
VGS = 4.5 V, ID = 4.9 A
N-Ch
0.042
0.053
VGS = - 4.5 V, ID = - 3.7 A
P-Ch
0.075
0.090
VDS = 15 V, ID = 5.9 A
N-Ch
15
VDS = - 15 V, ID = - 4.9 A
P-Ch
9
IS = 1.7 A, VGS = 0 V
N-Ch
0.80
1.2
IS = - 1.7 A, VGS = 0 V
P-Ch
- 0.80
- 1.2
N-Ch
13
20
P-Ch
15
25
N-Ch
2.3
P-Ch
4
nA
µA
A
0.036
Ω
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
N-Channel
VDS = 15 V, VGS = 10 V, ID = 5.9 A
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A
td(on)
td(off)
tf
2.0
N-Ch
0.5
2.2
P-Ch
5
12.6
6
12
P-Ch
7
15
N-Ch
14
25
P-Ch
10
20
N-Ch
30
60
P-Ch
40
80
N-Ch
5
10
P-Ch
20
40
IF = 1.7 A, dI/dt = 100 A/µs
N-Ch
30
60
IF = - 1.7 A, dI/dt = 100 A/µs
P-Ch
30
60
P-Channel
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
trr
2
P-Ch
N-Ch
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
N-Ch
nC
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71131
S09-0868-Rev. C, 18-May-09
Si4539ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
TC = - 55 °C
VGS = 10 V thru 5 V
4V
25 °C
24
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
3V
6
18
125 °C
12
6
2V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
1
Output Characteristics
3
4
5
Transfer Characteristics
0.08
1000
800
0.06
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
VGS = 4.5 V
0.04
VGS = 10 V
Ciss
600
400
Coss
0.02
200
Crss
0.00
0
0
6
12
18
24
30
0
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
10
VGS = 10 V
ID = 5.9 A
VDS = 15 V
ID = 5.9 A
1.4
6
4
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
1.2
1.0
0.8
2
0
0
3
6
9
12
15
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71131
S09-0868-Rev. C, 18-May-09
150
www.vishay.com
3
Si4539ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
30
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
0.04
0.02
0.00
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.2
40
ID = 250 µA
0.0
Power (W)
VGS(th) Variance (V)
ID = 5.9 A
0.06
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71131
S09-0868-Rev. C, 18-May-09
Si4539ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 V thru 7 V
30
TC = - 55 °C
6V
24
25 °C
24
I D - Drain Current (A)
I D - Drain Current (A)
5V
18
12
4V
6
18
125 °C
12
6
3V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
1500
0.20
1200
0.15
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1
VDS - Drain-to-Source Voltage (V)
VGS = 4.5 V
0.10
VGS = 10 V
Ciss
900
600
Coss
0.05
300
Crss
0
0.00
0
6
12
18
24
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 71131
S09-0868-Rev. C, 18-May-09
30
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
www.vishay.com
5
Si4539ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
VGS = 10 V
ID = 4.9 A
VDS = 15 V
ID = 4.9 A
1.4
6
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
1.0
0.8
2
0.6
- 50
0
0
4
8
12
16
20
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
30
0.40
0.35
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
0.30
0.25
ID = 4.9 A
0.20
0.15
0.10
0.05
1
0.00
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
VSD - Source-to-Drain Voltage (V)
6
8
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.8
50
0.6
40
ID = 250 µA
0.4
Power (W)
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
0.2
30
20
0.0
10
- 0.2
- 0.4
- 50
www.vishay.com
6
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
Document Number: 71131
S09-0868-Rev. C, 18-May-09
Si4539ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71131.
Document Number: 71131
S09-0868-Rev. C, 18-May-09
www.vishay.com
7
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000