SI4511DY_06

Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (Ω) 0.0145 at VGS = 10 V 0.017 at VGS = 4.5 V 0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V ID (A) 9.6 8.6 - 6.2 -5 FEATURES • TrenchFET® Power MOSFET Pb-free APPLICATIONS • Level Shift • Load Switch Available RoHS* COMPLIANT P-Channel - 20 SO-8 S1 G1 S2 G2 1 2 3 4 Top View G1 Ordering Information: Si4511DY-T1 Si4511DY-T1-E3 (Lead (Pb)-Free) S1 D2 8 7 6 5 D1 D1 D2 D2 G2 D1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Continuous Source Current (Diode Maximum Power Dissipationa Conduction)a TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel P-Channel 10 secs Steady 10 secs Steady 20 - 20 ± 16 ± 12 9.6 7.2 - 6.2 - 4.6 7.7 5.8 - 4.9 - 3.7 40 - 40 1.7 0.9 - 1.7 0.9 2 1.1 2 1.1 1.3 0.7 1.3 0.7 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. b. t ≤ 10 sec t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF N-Channel Typ Max 50 62.5 85 110 30 40 P-Channel Typ Max 50 62.5 90 110 30 35 Unit °C/W * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 1 Si4511DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 16 V VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VDS = - 5 V, VGS = - 4.5 V VGS = 10 V, ID = 9.6 A Drain-Source On-State Resistanceb rDS(on) VGS = - 4.5 V, ID = - 6.2 A VGS = 4.5 V, ID = 8.6 A VGS = - 2.5 V, ID = - 5 A Forward Transconductanceb Diode Forward Voltagb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.6 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω IF = 1.7 A, di/dt = 100 A/µs IF = - 1.7 A, di/dt = 100 A/µs P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11.5 17 3.7 4.1 3.3 4.3 12 25 12 30 55 70 15 50 50 40 20 40 20 45 85 105 25 75 100 80 ns 18 20 nC gfs VSD VDS = 15 V, ID = 9.6 A VDS = - 15 V, ID = - 6.2 A IS = 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 - 40 0.0115 0.022 0.0135 0.035 33 17 0.8 - 0.8 1.2 - 1.2 0.0145 0.033 0.017 0.050 S V Ω 0.6 - 0.6 1.8 1.4 ± 100 ± 100 1 -1 5 -5 A µA V nA Symbol Test Condition Min Typ Max Unit Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 40 VGS = 10 thru 4 V 32 I D − Drain Current (A) I D − Drain Current (A) 3V 32 25 °C, unless noted 40 24 24 16 16 TC = 125 °C 8 25 °C - 55 °C 8 2V 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Output Characteristics 0.020 2000 Transfer Characteristics r DS(on)− On-Resistance ( Ω ) 0.015 1600 VGS = 10 V C − Capacitance (pF) VGS = 4.5 V Ciss 1200 0.010 800 Coss Crss 400 0.005 0.000 0 8 16 24 32 40 0 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 1.6 Capacitance V GS − Gate-to-Source Voltage (V) 8 VDS = 10 V ID = 9.6 A rDS(on) − On-Resistance (Normalized) 1.4 VGS = 10 V ID = 9.6 A 6 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 18 21 24 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 3 Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 0.05 0.04 ID = 9.6 A 0.03 ID = 3 A 0.02 I S − Source Current (A) 10 TJ = 150 °C TJ = 25 °C r DS(on) − On-Resistance ( ) 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.00 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 ID = 250 µA 30 25 20 Power (W) On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) - 0.0 - 0.2 15 - 0.4 10 - 0.6 5 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ − Temperature (°C) Threshold Voltage Single Pulse Power 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc 1 0.1 VDS − Drain-to-Source Voltage (V) Safe Operating Area www.vishay.com 4 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 5 Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 VGS = 5 thru 3.5 V 32 I D − Drain Current (A) I D − Drain Current (A) 3V 32 40 TC = - 55 °C 25 °C 24 2.5 V 24 125 °C 16 2V 8 1.5 V 0 0.0 16 8 0.4 0.8 1.2 1.6 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Output Characteristics 0.10 3000 Transfer Characteristics r DS(on) − On-Resistance (Ω) C − Capacitance (pF) 0.08 2500 Ciss 2000 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 1500 1000 Coss 500 Crss 0.00 0 8 16 24 32 40 0 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 6.2 A 4 r DS(on) − On-Resistance (Normalized) 1.4 1.6 VGS = 4.5 V ID = 6.2 A Capacitance 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 15 18 Qg − Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ − Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 0.10 TJ = 150 °C 10 r DS(on) − On-Resistance ( Ω) 0.08 I S − Source Current (A) 0.06 ID = 6.2 A 0.04 TJ = 25 °C 0.02 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.6 30 25 On-Resistance vs. Gate-to-Source Voltage 0.4 V GS(th) Variance (V) Power (W) 0.2 ID = 250 µA 20 15 0.0 10 - 0.2 5 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ − Temperature (°C) Threshold Voltage 100 rDS(on) Limited IDM Limited Single Pulse Power 10 I D − Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 VDS − Drain-to-Source Voltage (V) Safe Operating Area Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 7 Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72223. www.vishay.com 8 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1