SI4946BEY

Si4946BEY New Product Vishay Siliconix Dual N-Channel 60-V (D-S) 175 _C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 6.5 5.8 rDS(on) (W) 0.041 @ VGS = 10 V 0.052 @ VGS = 4.5 V Qg (Typ) 9.2 nC nC D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4946BEY-T1—E3 (Lead (Pb)-Free) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Drain Diode Current Source-Drain Avalanche Current Single-Pulse Avalanche Energy TC = 25_C TA = 25_C L = 0 1 mH 0.1 TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 60 "20 6.5 5.5 5.3a, b 4.4a, b 30 3.1 2a, b 12 7.2 3.7 2.6 2.4a, b 1.7a, b −50 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t p 10 sec Steady State Symbol RthJA RthJF Typical 50 33 Maximum 62.5 41 Unit _C/W Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. t = 10 sec c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under steady state conditions is 110 _C/W. Document Number: 73411 S-51013—Rev. A, 23-May-05 www.vishay.com 1 Si4946BEY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.3 A VGS = 4.5 V, ID = 4.7 A VDS = 15 V, ID = 5.3 A 30 0.033 0.041 24 0.041 0.052 1.0 60 53 −6.7 2.4 3.0 "100 1 10 V mV/_C V nA mA A W S Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 30 V, RL = 6.8 W V, .8 ID ^ 4.4 A, VGEN = 10 V, Rg = 1 W VDD = 30 V, RL = 6.8 W V, .8 ID ^ 4.4 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz 3.1 VDS = 30 V, VGS = 10 V, ID = 5.3 A VDS = 30 V, VGS = 5 V, ID= 5.3 A VDS = 30 V, VGS = 0 V, f = 1 MHz 840 71 44 17 9.2 3.3 3.7 6.5 20 120 20 30 10 12 25 10 9.5 30 180 30 45 15 20 40 15 ns W 25 12 nC pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73411 S-51013—Rev. A, 23-May-05 IS ISM VSD trr Qrr ta tb IF = 4.4 A, di/dt = 100 A/ms, TJ = 25_C IS = 2 A 0.8 25 25 18 7 TC = 25_C 3.1 30 1.2 50 50 A V ns nC ns 2 Si4946BEY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 25 I D − Drain Current (A) 20 4V 15 10 5 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vishay Siliconix Output Characteristics VGS = 10 thru 5 V 10 Transfer Characteristics I D − Drain Current (A) 8 6 4 TC = 150_C −55_C 2 25_C VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 0.100 On-Resistance vs. Drain Current and Gate Voltage 1200 1000 C − Capacitance (pF) Capacitance rDS(on) − On-Resistance (mW) 0.080 Ciss 800 600 400 200 0 Crss 0 10 20 30 40 50 60 0.060 VGS = 4.5 V 0.040 VGS = 10 V 0.020 Coss 0.000 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) ID = 5.3 A 8 Gate Charge 2.2 2.0 rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 On-Resistance vs. Junction Temperature ID = 5.3 A 6 VDS = 30 V VDS = 48 V VGS = 10 V VGS = 4.5 V 4 2 0 0 4 8 12 16 20 Qg − Total Gate Charge (nC) Document Number: 73411 S-51013—Rev. A, 23-May-05 0.6 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 3 Si4946BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 rDS(on) − Drain-to-Source On-Resistance (W) 0.10 ID = 5.3 A 0.08 TJ = 150_C 0.06 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 TJ = 175_C 0.04 TJ = 25_C TJ = 25_C 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD − Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 −50 0 0.01 5 Power (W) VGS(th) (V) 20 ID = 250 mA 15 25 Single Pulse Power, Junction-to-Ambient 10 −25 0 25 50 75 100 125 150 175 0.1 1 Time (sec) 10 100 1000 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Ambient 10 I D − Drain Current (A) *Limited by rDS(on) 100 ms 1 1 ms 10 ms 0.1 100 ms TA = 25_C Single Pulse 1s 10 s dc 10 100 0.01 0.01 0.1 1 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com Document Number: 73411 S-51013—Rev. A, 23-May-05 4 Si4946BEY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 8 7 6 ID − Drain Current (A) Power (W) 5 4 3 2 1 0 0 25 50 75 100 125 150 175 Vishay Siliconix Current De-Rating* 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 Power, Junction-to-Case 75 100 125 150 175 TC − Case Temperature (_C) TC − Case Temperature (_C) 100 Single Pulse Avalanche Capability IC − Peak Avalanche Current (A) 10 TA + 1 0.000001 BV * V DD L @ ID 0.00001 0.0001 0.001 TA − Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73411 S-51013—Rev. A, 23-May-05 www.vishay.com 5 Si4946BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.01 10−4 0.02 10−3 Single Pulse 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73411. www.vishay.com Document Number: 73411 S-51013—Rev. A, 23-May-05 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1