Si6876EDQ
New Product
Vishay Siliconix
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VS1S2 (V) rS1S2(on) (Ω)
0.025 @ VGS = 10 V 30 0.030 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V
FEATURES
IS1S2 (A)
6.2 5.7 4.5
D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection
APPLICATIONS
D Battery Protection Circuitry - 1-2 Cell Li+/LiP
S1
TSSOP-8
S1 S1 S1 G1 1 2 3 4 Top View D 8 S2 7 S2 6 S2 5 G2
G1 R
Si6876EDQ
R G2
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Source1—Source2 Voltage Gate-Source Voltage Continuous Source1—Source2 Current (TJ = 150_C)a Pulsed Source1-Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C IS1S2 ISM 1.78 1.14 - 55 to 150
Symbol
VS1S2 VGS
10 secs
T30
"12 6.2 5.0 30
Steady State
Unit
V
5.0 4.0 A
1.19 0.76 W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec. Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Source)a Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71822 S-20802—Rev. B, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
55 85 35
Maximum
70 105 45
Unit
_C/W
1
Si6876EDQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Source Current On-State Source Currenta IS1S2 IS(on) VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 10 V, ID = 6.2 A Source1-Source2 On-State Resistancea rS1S2(on) VGS = 4.5 V, ID = 5.7 A VGS = 2.5 V, ID = 4.5 A Forward Transconductancea gfs VDS = 10 V, ID = 6.2 A 20 0.020 0.024 0.037 39 0.025 0.030 0.050 S W 0.45 1.5 "500 "10 1 25 V nA mA mA A
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamicb
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 1.3 3 10 5.2 2.5 6 20 10 ms
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8 10,000
Gate Current vs. Gate-Source Voltage
I GSS - Gate Current (mA)
1,000 6 I GSS - Gate Current (m A) 100 TJ = 150_C
4
10
1 TJ = 25_C
2
0.1
0 0 4 8 12 16 20
0.01 0 4 8 12 16 20
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V) Document Number: 71822 S-20802—Rev. B, 01-Jul-02
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2
Si6876EDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 3 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30
Vishay Siliconix
Transfer Characteristics
18
18
12 2V 6
12 TC = 125_C 6 25_C - 55_C
0 0 1 2 3 4 5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.070 1.6
On-Resistance vs. Junction Temperature
r DS(on) - On-Resistance ( W )
r DS(on) - On-Resistance (W) (Normalized) 30
0.056 VGS = 10 V 0.042 VGS = 4.5 V
1.4
1.2
0.028
1.0
0.014
VGS = 2.5 V
0.8
0.000 0 5 10 15 20 25
0.6 - 50
- 25
0
25
50
75
100
125
150
ID - Drain Current (A)
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10 0.4
Threshold Voltage
r DS(on) - On-Resistance ( W )
0.08 V GS(th) Variance (V) IS1S2 = 6.2 A 0.06
0.2
IS1S2 = 250 mA
- 0.0
0.04
- 0.2
0.02
- 0.4
0.00 0 2 4 6 8 10
- 0.6 - 50
- 25
0
25
50
75
100
125
150
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (_C)
Document Number: 71822 S-20802—Rev. B, 01-Jul-02
www.vishay.com
3
Si6876EDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
100
80
Power (W)
60
40
20
0 0.01 0.1 1 Time (sec) 10 30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85_C/W
t1 t2
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
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4
Document Number: 71822 S-20802—Rev. B, 01-Jul-02
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