SI6880EDQ

Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.018 @ VGS = 4.5 V 20 0.022 @ VGS = 2.5 V 0.026 @ VGS = 1.8 V FEATURES ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel *Typical value by design N-Channel S2 D 8D 7 S2 6 S2 5 G2 *1.5 kW G1 G2 *1.5 kW Si6880EDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.6 1.78 1.14 –55 to 150 Symbol VDS VGS 10 secs T20 "12 7.5 6 30 Steady State Unit V 6 5 A 1.08 1.19 0.76 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec. Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)a Steady State Steady State RthJA RthJF Symbol Typical 55 85 35 Maximum 70 105 45 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71690 S-05238—Rev. B, 17-Dec-01 www.vishay.com 1 Si6880EDQ Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 7.5 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 6.5 A VGS = 1.8 V, ID = 6.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 7.5 A IS = 1.6 A, VGS = 0 V 20 0.015 0.017 0.020 39 0.65 1.1 0.018 0.022 0.026 S V W 0.45 "250 "10 1 25 V nA mA mA A Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W 10 10 ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 7.5 A 27 3.0 5.5 1.5 800 6 5.5 2.3 1200 10 10 ms 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D – Drain Current (A) 1.5 V 18 I D – Drain Current (A) 24 30 Transfer Characteristics 18 12 12 TC = 125_C 6 25_C –55_C 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71690 S-05238—Rev. B, 17-Dec-01 Si6880EDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 5 VDS = 10 V ID = 7.5 A Vishay Siliconix Gate Charge V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( W ) 4 0.03 VGS = 1.8 V 0.02 VGS = 2.5 V 3 2 0.01 VGS = 4.5 V 1 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID – Drain Current (A) Qg – Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 7.5 A I S – Source Current (A) 10 30 Source-Drain Diode Forward Voltage r DS(on) – On-Resistance ( W ) (Normalized) 1.4 TJ = 150_C 1.2 1.0 TJ = 25_C 0.8 0.6 –50 1 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.060 0.4 Threshold Voltage rDS(on)– On-Resistance ( W ) 0.048 V GS(th)Variance (V) ID = 7.5 A 0.036 0.2 ID = 250 mA –0.0 0.024 –0.2 0.012 –0.4 0.000 0 2 4 6 8 –0.6 –50 –25 0 25 50 75 100 125 150 VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) Document Number: 71690 S-05238—Rev. B, 17-Dec-01 www.vishay.com 3 Si6880EDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 100 80 Power (W) 60 40 20 0 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71690 S-05238—Rev. B, 17-Dec-01