Si6924AEDQ
New Product
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
VDS (V)
28
rDS(on) (W)
0.033 @ VGS = 4.5 V 0.038 @ VGS = 3.0 V 0.042 @ VGS = 2.5 V
ID (A)
4.6 4.3 4.1
ESD Protected
2000 V
FEATURES
D Low rDS(on) D VGS Max Rating: 14 V D Exceeds 2-kV ESD Protection
D 28-V VDS Rated D Symetrical Voltage Blocking (Off Voltage)
DESCRIPTION
The Si6924AEDQ is a dual n-channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated into the MOSFET. The device is designed for use in Lithium Ion battery pack circuits. The common-drain contsruction takes advantage of the typical battery pack topology, allowing a further reduction of the device’s on-resistance. The 2-stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the gates inherent safe operating range. The series resistor used to limit the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to v 10 mA @ 14 V and the maximum toff to 12 ms. The Si6924AEDQ has been optimized as a battery or load switch in Lithium Ion applications with the advantage of both a 2.5-V rDS(on) rating and a safe 14-V gate-to-source maximum rating.
APPLICATION CIRCUITS
D ESD and Overvoltage Protection ESD and Overvoltage Protection R** G
S **R typical value is 3.3 kW by design. Battery Protection Circuit See Typical Characteristics, Gate-Current vs. Gate-Source Voltage, Page 3. *Thermal connection to drain pins is required to achieve specific performance.
FIGURE 1. Typical Use In a Lithium Ion Battery Pack
Document Number: 72215 S-03985—Rev. A, 13-May-03
FIGURE 2. Input ESD and Overvoltage Protection Circuit.
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Si6924AEDQ
Vishay Siliconix
New Product
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
*D
*D
TSSOP-8
D S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6924AEDQ-T1 N-Channel S1 N-Channel S2 D 8D 7 S2 6 S2 5 G2 3.3 kW G1 G2 3.3 kW
Si6924AEDQ
*Thermal connection to drain pins is required to achieve specific performance.
FIGURE 3.
FIGURE 4.
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage, Source-Drain Voltage Gate-Source Voltage Continuous Drain to Source Current (TJ = 150_C)a Drain-to-Source Pulsed Drain-to-Source Current Pulsed Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 sec
28 "14 4.6
Steady State
Unit
V
4.1 3.2 20 A 0.9 1.0 0.64 - 55 to 150 W _C
ID IDM IS PD TJ, Tstg
3.7
1.2 1.3 0.84
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. www.vishay.com Document Number: 72215 S-03985—Rev. A, 13-May-03 Steady State Steady State RthJA RthJF
Symbol
Typical
71 96 56
Maximum
95 125 70
Unit
_C/W
2
Si6924AEDQ
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "14 V VDS = 22.4 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 22.4 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 5 V VGS = 4.5 V, ID = 4.6 A Drain-Source On-State Resistanceb rDS(on) VGS = 3.0 V, ID = 4.3 A VGS = 2.5 V, ID = 4.1 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 10 V, ID = 4.6 A IS = 1.2 A, VGS = 0 V 10 0.022 0.025 0.029 25 0.7 1.1 0.033 0.038 0.042 S V W 0.6 1.5 "1 "20 1 5 V mA mA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 4.6 A 6.5 1.2 1.5 0.95 1.4 7 3.1 1.5 2.1 11 5 ms 10 nC
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
0.020 10,000 1,000 I GSS - Gate Current (mA) 0.015 I GSS - Gate Current (m A) 100 10 1 0.1 TJ = 25_C 0.01 0.000 0 3 6 9 12 15 0.001 0 2 4 6 8 10 12 14 TJ = 150_C
Gate Current vs. Gate-Source Voltage
0.010
0.005
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 72215 S-03985—Rev. A, 13-May-03
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Si6924AEDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25 VGS = 5 thru 2,5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25
Transfer Characteristics
15
15
10
2V
10 TC = 125_C 5 25_C - 55_C
5
0 0.00
0.25
0.50
0.75
1.00
1.25
1.50
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05 V GS - Gate-to-Source Voltage (V) 5 VDS = 10 V ID = 4.6 A
Gate Charge
r DS(on) - On-Resistance ( W )
0.04
4
0.03
VGS = 2.5 V
3
0.02
VGS = 3 V
VGS = 4.5 V
2
0.01
1
0.00 0 4 8 12 16 20 ID - Drain Current (A)
0 0 1 2 3 4 5 6 7
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8 VGS = 4.5 V ID = 4.6 A I S - Source Current (A) 10 20
Source-Drain Diode Forward Voltage
r DS(on) - On-Resistance (W ) (Normalized)
1.6
1.4
TJ = 150_C
1.2
1.0
TJ = 25_C
0.8
0.6 - 50
1 - 25 0 25 50 75 100 125 150 0 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Document Number: 72215 S-03985—Rev. A, 13-May-03
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Si6924AEDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-to-Source Voltage
0.10 0.4 ID = 250 mA r DS(on) - On-Resistance ( W ) 0.08 V GS(th) Variance (V) 0.2
Vishay Siliconix
Threshold Voltage
0.06
ID = 4.6 A
- 0.0
0.04
- 0.2
0.02
- 0.4
0.00 0 1 2 3 4 5
- 0.6 - 50
- 25
0
25
50
75
100
125
150
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (_C)
Single Pulse Power
60 50 10 I D - Drain Current (A) 40 Power (W) 100 Limited by rDS(on)
Safe Operating Area
1 ms
30
1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc
20
10 0 0.001 0.01 0.1 Time (sec) 1 10 0.01 0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
PDM t1 t2 1. Duty Cycle, D = t1 t2
0.02
2. Per Unit Base = RthJA = 96_C/W
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72215 S-03985—Rev. A, 13-May-03
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Si6924AEDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 72215 S-03985—Rev. A, 13-May-03
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