SIHFP460

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single D FEATURES 500 0.27 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP460PbF SiHFP460-E3 IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 20 20 13 80 2.2 960 20 28 280 3.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12). c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91237 S-81360-Rev. A, 28-Jul-08 www.vishay.com 1 IRFP460, SiHFP460 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.45 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1 2 A b Ab 500 2.0 13 0.63 - 4.0 ± 100 25 250 0.27 - V V/°C V nA µA Ω S VDS = 50 V, ID = 12 VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 4200 870 350 18 59 110 58 5.0 13 210 29 110 nH ns nC pF VGS = 10 V ID = 20 A, VDS = 400 V see fig. 6 and 13b - VDD = 250 V, ID = 20 A , RG = 4.3 Ω, RD = 13 Ω, see fig. 10b - Between lead, 6 mm (0.25") from package and center of die contact D - G S - 570 5.7 20 A 80 1.8 860 8.6 V ns µC G S TJ = 25 °C, IS = 20 A, VGS = 0 Vb TJ = 25 °C, IF = 20A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91237 S-81360-Rev. A, 28-Jul-08 IRFP460, SiHFP460 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID, Drain Current (A) ID, Drain Current (A) 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top VGS 150 °C 101 4.5 V 101 25 °C 100 91237_01 20 µs Pulse Width TC = 25 °C 100 101 100 4 91237_03 20 µs Pulse Width VDS = 50 V 5 6 7 8 9 10 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics ID, Drain Current (A) 101 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top RDS(on), Drain-to-Source On Resistance (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 20 A VGS = 10 V 4.5 V 100 100 91237_02 20 µs Pulse Width TC = 150 °C 101 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) 91237_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91237 S-81360-Rev. A, 28-Jul-08 www.vishay.com 3 IRFP460, SiHFP460 Vishay Siliconix 10 000 8000 6000 Ciss 4000 Coss ISD, Reverse Drain Current (A) Capacitance (pF) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 102 150 °C 25 °C VGS = 0 V 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2000 Crss 0 100 91237_05 101 101 0.6 91237_07 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 VGS, Gate-to-Source Voltage (V) ID = 20 A VDS = 400 V VDS = 250 V 103 5 Operation in this area limited by RDS(on) ID, Drain Current (A) 16 2 102 5 12 VDS = 100 V 8 10 µs 100 µs 2 10 5 4 For test circuit see figure 13 2 1 ms TC = 25 °C TJ = 150 °C Single Pulse 1 2 5 10 ms 102 2 5 0 0 91237_06 1 40 80 120 160 200 91237_08 10 2 5 103 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91237 S-81360-Rev. A, 28-Jul-08 IRFP460, SiHFP460 Vishay Siliconix RD VDS VGS D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 RG ID, Drain Current (A) 16 12 Fig. 10a - Switching Time Test Circuit 8 VDS 4 90 % 0 25 91237_09 50 75 100 125 150 10 % VGS td(on) tr td(off) tf TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 1 Thermal Response (ZthJC) 0 - 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-5 10-4 10-3 10-2 0.1 1 10 10-2 10-3 91237_11 t1, Rectangular Pulse Duration (S) Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS RG VDS tp VDD D.U.T IAS 10 V tp 0.01 Ω IAS Fig. 12b - Unclamped Inductive Waveforms VDS + - V DD A VDS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91237 S-81360-Rev. A, 28-Jul-08 www.vishay.com 5 IRFP460, SiHFP460 Vishay Siliconix 2400 EAS, Single Pulse Energy (mJ) 2000 1600 1200 800 400 0 VDD = 50 V 25 50 75 100 ID 8.9 A 13 A Bottom 20 A Top 125 150 91237_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 10 V QGS QG QGD VG Charge Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF + D.U.T. VGS 3 mA - VDS IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91237 S-81360-Rev. A, 28-Jul-08 IRFP460, SiHFP460 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91237. Document Number: 91237 S-81360-Rev. A, 28-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1