SIHFP460N-E3

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 124 40 57 Single D FEATURES 500 0.24 • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching G S D G S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES • Full Bridge • Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 500 ± 30 20 13 80 2.2 EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw 340 20 28 280 5.0 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.8 mH, RG = 25 Ω, IAS = 20 A (see fig. 12). c. ISD ≤ 20 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 www.vishay.com 1 WORK-IN-PROGRESS IRFP460N, SiHFP460N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.45 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1 2 A b VDS = 50 V, ID = 12 A 500 3.0 10 580 - 5.0 ± 100 25 250 0.24 - V mV/°C V nA µA Ω S Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 Vc ID = 20 A, VDS = 400 V see fig. 6 and 13b - 3540 350 30 3930 95 200 23 87 34 33 124 40 57 ns nC pF VGS = 10 V - VDD = 250 V, ID = 20 A RG = 4.3 Ω, RD= 13 Ω, see fig. 10b - - 550 7.2 20 A 80 1.8 825 10.8 V ns µC G S TJ = 25 °C, IS = 20 A, VGS = 0 Vb TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 IRFP460N, SiHFP460N Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TJ = 150 ° C 10 10 1 TJ = 25 ° C 1 0.1 5.0V 0.01 0.001 0.1 20µs PULSE W IDTH TJ = 25 °C 1 10 100 0.1 5 6 7 8 V DS = 50V 20µs PULSE W IDTH 9 10 11 VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 20A 10 1 5.0V 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 www.vishay.com 3 IRFP460N, SiHFP460N Vishay Siliconix 100000 ISD , Reverse Drain Current (A) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 100 10000 TJ = 150 ° C 10 C, Capacitance(pF) Ciss 1000 Coss TJ = 25 ° C 1 100 Crss 10 1 10 100 1000 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VSD,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 ID = 20A VDS = 400V VDS = 250V VDS = 100V 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) VGS , Gate-to-Source Voltage (V) 16 12 ID, Drain-to-Source Current (A) 100 10 100µsec 1msec 8 1 T A = 25°C T J = 150°C 0.1 Single Pulse 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area 10msec 4 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 140 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 IRFP460N, SiHFP460N Vishay Siliconix RD VDS 20 VGS RG D.U.T. + ID , Drain Current (A) 15 10V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % - VDD 10 Fig. 10a - Switching Time Test Circuit VDS 90 % 5 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig. 9 - Maximum Drain Current vs. Case Temperature 10 % VGS t d(on) tr t d(off) t f Fig. 10b - Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case V DS 15 V tp VDS L Driver RG 20 V tp D.U.T. IAS 0.01 Ω + A - VDD A I AS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFP460N, SiHFP460N Vishay Siliconix EAS , Single Pulse Avalanche Energy (mJ) 750 600 ID 8.9A 12.6A BOTTOM 20A TOP 450 300 150 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 12 V 0.2 µF 50 kΩ 0.3 µF 10 V QGS VG Q GD D.U.T. VGS 3 mA + V - DS Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 IRFP460N, SiHFP460N Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91236 Document Number: 91236 S-Pending-Rev. B, 23-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1