SIHFP460A-E3

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 105 26 42 Single D FEATURES 500 0.27 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching G TYPICAL SMPS TOPOLOGIES S D G S N-Channel MOSFET • Full Bridge • PFC Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRP460APbF SiHFP460A-E3 IRP460A SiHFP460A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 ± 30 20 13 80 2.2 960 20 28 280 3.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12). c. ISD ≤ 20 A, dI/dt ≤ 125 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91234 S-81360-Rev. A, 28-Jul-08 www.vishay.com 1 IRFP460A, SiHFP460A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.45 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1 2 A b Ab 500 2.0 11 0.61 - 4.0 ± 100 25 250 0.27 - V V/°C V nA µA Ω S VDS = 50 V, ID = 12 VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 Vc - 3100 480 18 4430 130 140 pF VGS = 10 V ID = 20 A, VDS = 400 V, see fig. 6 and 13b VDD = 250 V, ID = 20 A, RG = 4.3 Ω, RD = 13 Ω, see fig. 10b - 18 55 45 39 105 26 42 ns nC - 480 5.0 20 A 80 1.8 710 7.5 V ns µC G S TJ = 25 °C, IS = 20A, VGS = 0 Vb TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb - Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91234 S-81360-Rev. A, 28-Jul-08 IRFP460A, SiHFP460A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 102 VGS 102 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) Top 10 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 150 °C 10 25 °C 1 4.5 V 1 0.1 0.1 91234_01 20 µs Pulse Width TC = 25 °C 1 10 102 0.1 4.0 91234_03 20 µs Pulse Width VDS = 50 V 5.0 6.0 7.0 8.0 9.0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) 102 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 3.0 2.5 2.0 1.5 1.0 0.5 ID, Drain-to-Source Current (A) ID = 20 A VGS = 10 V 10 4.5 V 1 1 91234_02 20 µs Pulse Width TC = 150 °C 10 102 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics 91234_04 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91234 S-81360-Rev. A, 28-Jul-08 www.vishay.com 3 IRFP460A, SiHFP460A Vishay Siliconix 105 104 ISD, Reverse Drain Current (A) Capacitance (pF) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss 102 10 150 °C 25 °C 103 102 Coss 1 10 Crss 1 1 91234_05 0.1 10 102 103 91234_07 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 VGS, Gate-to-Source Voltage (V) ID = 20 A VDS = 400 V VDS = 250 V 103 Operation in this area limited by RDS(on) 16 ID, Drain Current (A) 102 10 µs 100 µs 10 1 ms TC = 25 °C TJ = 150 °C Single Pulse 10 102 10 ms 103 104 12 VDS = 100 V 8 4 For test circuit see figure 13 0 0 91234_06 1 20 40 60 80 100 91234_08 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91234 S-81360-Rev. A, 28-Jul-08 IRFP460A, SiHFP460A Vishay Siliconix RD VDS VGS D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 RG ID, Drain Current (A) 15 10 Fig. 10a - Switching Time Test Circuit VDS 90 % 5 0 25 91234_09 50 75 100 125 150 TC, Case Temperature (°C) 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 1 Thermal Response (ZthJC) 0 − 0.5 0.1 0.2 0.1 0.05 10-2 0.02 0.01 Single Pulse (Thermal Response) PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 10-3 10-5 91234_11 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS tp VDS L Driver RG 20 V tp D.U.T. IAS 0.01 Ω + A - VDD IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91234 S-81360-Rev. A, 28-Jul-08 www.vishay.com 5 IRFP460A, SiHFP460A Vishay Siliconix EAS, Single Pulse Avalanche Energy (mJ) 2400 2000 1600 1200 800 400 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) VDSav, Avalanche Voltage (V) ID Top 8.9 A 13 A Bottom 20 A 620 600 580 560 540 0 91234_12d 4 8 12 16 20 91234_12c IAV, Avalanche Current (A) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 kΩ 12 V 10 V QGS QG 0.2 µF 0.3 µF QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91234 S-81360-Rev. A, 28-Jul-08 IRFP460A, SiHFP460A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91234. Document Number: 91234 S-81360-Rev. A, 28-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1