SMMA511DJ-T1-GE3

New Product SMMA511DJ Vishay Siliconix N- and P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY N-CHANNEL VDS (V) RDS(on) (Ω) at VGS = ± 4.5 V RDS(on) (Ω) at VGS = ± 2.5 V RDS(on) (Ω) at VGS = ± 1.8 V ID (A)a Configuration PowerPAK SC-70-6 Dual FEATURES P-CHANNEL - 12 0.070 0.100 0.140 - 4.5 N- and P-Pair D1 S2 • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Compliant to RoHS Directive 2002/95/EC • Find out more about Vishay’s Medical Products at: www.vishay.com/medical-mosfets 12 0.040 0.048 0.063 4.5 1 S1 2 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 2.05 mm S1 G2 D2 3 G1 APPLICATION EXAMPLES D2 P-Channel MOSFET N-Channel MOSFET Marking Code MAX Part # code XXX Lot Traceability and Date code • Medical Implantable Applications Including - Drug Delivery Systems - Defibrillators - Pacemakers - Hearing Aids - Other Implantable Devices • Load Switch for Portable Devices ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SC-70 SMMA511DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °Ca Continuous Drain Current (TJ = 150 °C) TC = 70 °Ca TA = 25 °Ca, b, c TA = 70 °Ca, b, c Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C a TA = 25 °Cb, c TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °Ca, c TA = 70 °Ca, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID SYMBOL VDS VGS N-CHANNEL 12 ±8 4.5 4.5 4.5 4.5 20 4.5 1.6 6.5 5 1.9 1.2 - 55 to + 150 260 P-CHANNEL - 12 ±8 - 4.5 - 4.5 - 4.3 - 3.4 - 10 - 4.5 - 1.6 6.5 5 1.9 1.2 °C W A UNIT V Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 1 New Product SMMA511DJ Vishay Siliconix THERMAL RESISTANCE RATINGS N-CHANNEL PARAMETER Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State SYMBOL RthJA RthJC TYP. 52 12.5 MAX. 65 16 P-CHANNEL TYP. 52 12.5 MAX. 65 16 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Package limit is ± 4.5 A. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VGS = 0 V Zero Gate Voltage Drain Current IDSS VGS = 0 V VGS = 0 V VGS = 0 V On-State Drain Currenta ID(on) VGS = 4.5 V VGS = - 4.5 V VGS = 4.5 V VGS = - 4.5 V Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V VGS = - 2.5 V VGS = 1.8 V VGS = - 1.8 V Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V P-Channel VDS = - 6 V, f = 1 MHz N-Ch N-Channel VDS = 6 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch 400 400 120 140 70 100 pF gfs VDS = 12 V VDS = - 12 V VDS = 12 V, TJ = 55 °C VDS = - 12 V, TJ = 55 °C VDS ≥ 5 V VDS ≤ - 5 V ID = 4.2 A ID = - 3.3 A ID = 3.8 A ID = - 2.8 A ID = 1.6 A ID = - 0.7 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 12 - 12 0.4 - 0.4 15 -8 12 -7 - 2.8 2.1 0.033 0.058 0.039 0.082 0.051 0.111 13 9 1 -1 ± 100 ± 100 1 -1 10 - 10 0.040 0.070 0.048 0.100 0.063 0.140 S Ω A µA V nA mV/°C V SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS = 10 V, ID = 4.2 A VDS = - 10 V, ID = - 3.3 A www.vishay.com 2 Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Dynamicb VGS = 8 V Total Gate Charge Qg VGS = - 8 V VGS = 4.5 V VGS = - 4.5 V Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 3.4 A, dI/dt = - 100 A/µs, TJ = 25 °C VGS = 0 V IS = 4.4 A IS = - 3.4 A TC = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 - 0.8 15 30 8 12 8.5 14 8.5 16 4.5 - 4.5 20 - 10 1.2 - 1.2 30 60 20 24 ns V ns nC A Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf N-Channel VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 4.5 V, Rg = 1 Ω VGS = 4.5 V VGS = - 4.5 V VGS = 4.5 V VGS = - 4.5 V f = 1 MHz N-Channel VDS = 6 V, ID = 5.5 A P-Channel VDS = - 6 V, ID = - 4.3 A VDS = 6 V, ID = 5.5 A VDS = - 6 V, ID = - 4.3 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7.5 8 4.5 5 0.6 0.8 0.8 1.4 2.5 7 5 15 15 25 35 20 15 10 5 5 10 12 15 20 10 10 12 12 6.8 7.5 10 25 25 40 55 30 25 15 10 10 15 20 25 30 15 15 ns Ω nC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 3 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 VGS = 5 V thru 2.5 V 16 I D - Drain Current (A) 8 I D - Drain Current (A) 10 VGS = 2 V 12 6 8 VGS = 1.5 V 4 TC = 25 °C 2 TC = 125 °C 4 VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 2.0 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 0.09 R DS(on) - On-Resistance (Ω) 0.08 0.07 0.06 0.05 0.04 0.03 0 4 8 12 16 20 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V VGS = 1.8 V C - Capacitance (pF) 600 Transfer Characteristics 500 Ciss 400 300 200 Coss 100 Crss 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 5.5 A VGS - Gate-to-Source Voltage (V) 6 VDS = 6 V 4 1.6 1.5 1.4 R DS(on) - On-Resistance (Normalized) Capacitance VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A 1.3 1.2 1.1 1.0 0.9 0.8 VDS = 9.6 V 2 0 0 2 4 6 8 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 0.12 10 R DS(on) - On-Resistance (Ω) 0.10 I S - Source Current (A) 0.08 TJ = 150 °C TJ = 25 °C 0.06 ID = 4.2 A, 125 °C 1 0.04 ID = 4.2 A, 25 °C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.02 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.8 0.7 ID = 250 µA 0.6 VGS(th) (V) 0.5 0.4 0.3 On-Resistance vs. Gate-to-Source Voltage 20 15 Power (W) - 25 0 25 50 75 100 125 150 10 5 0.2 0.1 - 50 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 10 ms 100 ms 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 * VGS BVDSS Limited Single Pulse Power, Junction-to-Ambient 1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 5 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 14 12 I D - Drain Current (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Power Dissipation (W) 6 8 4 Package Limited 2 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 Single Pulse 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 7 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 VGS = 5 V thru 2.5 V 8 I D - Drain Current (A) VGS = 2 V I D - Drain Current (A) 1.6 2.0 6 1.2 4 VGS = 1.5 V 2 0.8 TC = 25 °C 0.4 TC = 125 °C TC = - 55 °C 0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 700 600 VGS = 1.8 V 0.20 500 Transfer Characteristics 0.25 R DS(on) - On-Resistance (Ω) C - Capacitance (pF) Ciss 400 300 200 Crss 100 Coss 0.15 VGS = 2.5 V 0.10 0.05 VGS = 4.5 V 0.00 0 2 4 6 8 10 I D - Drain Current (A) 0 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 4.3 A VGS - Gate-to-Source Voltage (V) VDS = 6 V 1.4 R DS(on) - On-Resistance (Normalized) 6 1.6 ID = 3.3 A Capacitance VGS = 4.5 V, 2.5 V, 1.8 V 1.2 VDS = 9.6 V 4 1.0 2 0.8 0 0 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 0.20 ID = 3.3 A R DS(on) - On-Resistance (Ω) 0.15 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.10 125 °C 0.05 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.8 On-Resistance vs. Gate-to-Source Voltage 20 0.7 15 V GS(th) (V) ID = 250 µA Power (W) 125 150 0.6 10 0.5 0.4 5 0.3 - 50 - 25 0 25 50 75 100 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 10 Limited by R DS(on)* 100 µs Single Pulse Power, Junction-to-Ambient I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified 0.1 Safe Operating Area, Junction-to-Ambient Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 9 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 8 8 I D - Drain Current (A) Power Dissipation (W) 6 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65281. Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 11 Package Information Vishay Siliconix PowerPAK® SC70-6L PIN1 e PIN2 b PIN3 L PIN1 e PIN2 b PIN3 L K E1 D1 D1 K PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL E2 K4 E1 D1 PIN6 K3 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE K E3 D2 D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 0.175 0.675 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.95 0.235 2.05 1.50 0.395 0.475 0.65 BSC 0.275 TYP 0.400 TYP 0.240 TYP 0.225 TYP 0.355 TYP 0.275 0.375 0.007 Max 0.80 0.05 0.38 0.25 2.15 1.05 0.335 2.15 1.60 0.445 0.525 Min 0.027 0 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 INCHES Nom 0.030 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP 0.016 TYP 0.009 TYP 0.009 TYP 0.014 TYP 0.011 0.015 0.175 0.05 0.275 0.10 Max 0.032 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 0.65 BSC 0.275 TYP 0.320 TYP 0.252 TYP 1.98 0.85 2.05 0.95 Min 0.675 0 0.23 0.15 1.98 0.513 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.613 A1 C DUAL PAD INCHES Max 0.80 0.05 0.38 0.25 2.15 0.713 2.15 1.05 Min 0.027 0 0.009 0.006 0.078 0.020 0.078 0.033 Nom 0.030 0.012 0.008 0.081 0.024 0.081 0.037 Max 0.032 0.002 0.015 0.010 0.085 0.028 0.085 0.041 E1 0.026 BSC 0.011 TYP 0.013 TYP 0.010 TYP 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 1.600 (0.063) Dimensions in mm/(Inches) 0.650 (0.026) APPLICATION NOTE Return to Index www.vishay.com 12 Document Number: 70487 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1