TCET1113

TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated FEATURES • CTR offered in 9 groups • Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) C E 17918_1 • Climatic classification 55/100/21 (IEC 60068 part 1) • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection 1 C C V DE • Low temperature coefficient of CTR • Temperature range - 40 to + 110 °C • Rated impulse VIOTM = 8 kVpeak voltage (transient overvoltage) A DESCRIPTION The TCET1110/ TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements. • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation VIOWM = 600 VRMS • Rated recurring VIORM = 848 peak voltage peak (RMS includes DC) voltage (repetitive) • Creepage current resistance according to VDE 0303/ IEC 60112 Comparative Tracking Index: CTI ≥ 175 • Thickness through insulation ≥ 0.75 mm • External creepage distance > 8 mm • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements • IEC 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated household apparatus electronic and related AGENCY APPROVALS • UL1577, file no. E76222 system code U, double protection • BSI: EN 60065:2002, EN 60950:2000 certificate no. 7081 and 7402 • DIN EN 60747-5-2 (VDE 0884) DIN EN 60747-5-5 pending • FIMKO APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-5 pending. Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 1 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated ORDER INFORMATION PART TCET1110 TCET1111 TCET1112 TCET1113 TCET1114 TCET1115 TCET1116 TCET1117 TCET1118 TCET1119 TCET1110G TCET1111G TCET1112G TCET1113G TCET1114G TCET1115G TCET1116G TCET1117G TCET1118G TCET1119G Note 4 Pin = single channel G = lead form 10.16 mm; G is not marked on the body REMARKS CTR 50 to 600 %, DIP-4 CTR 40 to 80 %, DIP-4 CTR 63 to 125 %, DIP-4 CTR 100 to 200 %, DIP-4 CTR 160 to 320 %, DIP-4 CTR 50 to 150 %, DIP-4 CTR 100 to 300 %, DIP-4 CTR 80 to 160 %, DIP-4 CTR 130 to 260 %, DIP-4 CTR 200 to 400 %, DIP-4 CTR 50 to 600 %, DIP-4 CTR 40 to 80 %, DIP-4 CTR 63 to 125 %, DIP-4 CTR 100 to 200 %, DIP-4 CTR 160 to 320 %, DIP-4 CTR 50 to 150 %, DIP-4 CTR 100 to 300 %, DIP-4 CTR 80 to 160 %, DIP-4 CTR 130 to 260 %, DIP-4 CTR 200 to 400 %, DIP-4 ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Forward surge current OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current COUPLER Isolation test voltage (RMS) Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case, ≤ 10 s t = 1 min VISO Tamb Tstg Tsld 5000 - 40 to + 110 - 55 to + 125 260 VRMS °C °C °C tP/T = 0.5, tP ≤ 10 ms VCEO VECO IC ICM 70 7 50 100 V V mA mA tP ≤ 10 µs VR IF IFSM 6 60 1.5 V mA A TEST CONDITION SYMBOL VALUE UNIT Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. www.vishay.com 2 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated THERMAL CHARACTERISTICS PARAMETER LED power dissipation Output power dissipation Maximum LED junction temperature Maximum output die junction temperature Thermal resistance, junction emitter to board Thermal resistance, junction emitter to case Thermal resistance, junction detector to board Thermal resistance, junction detector to case Thermal resistance, junction emitter to junction detector Thermal resistance, board to ambient(2) Thermal resistance, case to ambient(2) (1) TEST CONDITION at 25 °C at 25 °C SYMBOL Pdiss Pdiss Tjmax Tjmax θEB θEC θDB θDC θED θBA θCA VALUE 100 150 125 125 173 149 111 127 173 197 4041 UNIT mW mW °C °C °C/W °C/W °C/W °C/W °C/W °C/W °C/W Notes (1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of optocouplers application note. (2) For 2 layer FR4 board (4" x 3" x 0.062) TA θCA TC Package θDC TJD θEC θDE TJE θDB TB θEB θBA 19996 TA Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 3 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated ELECTRICAL CHARACTERISTICS PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector emitter cut-off current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz VCEsat fc Ck 110 0.3 0.3 V kHz pF I C = 1 mA IE = 100 µA VCE = 20 V, If = 0, E = 0 VCEO VECO ICEO 70 7 10 100 V V nA IF = 50 mA VR = 0, f = 1 MHz VF Cj 1.25 50 1.6 V pF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART TCET1111 TCET1111G TCET1112 TCET1112G TCET1113 TCET1113G TCET1114 TCET1114G TCET1110 TCET1110G TCET1115 TCET1115G TCET1116 TCET1116G TCET1117 TCET1117G TCET1118 TCET1118G TCET1119 TCET1119G TCET1111 TCET1111G TCET1112 TCET1112G TCET1113 TCET1113G TCET1114 TCET1114G SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR MIN. 13 22 34 56 50 50 100 80 130 200 40 63 100 160 TYP. 30 45 70 90 600 150 300 160 260 400 80 125 200 320 MAX. UNIT % % % % % % % % % % % % % % VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA www.vishay.com 4 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated MAXIMUM SAFETY RATINGS PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature VIOTM Tsi 8 150 kV °C Pdiss 265 mW IF 130 mA TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Note According to DIN EN 60747-5-2 (VDE0884)/ DIN EN 60747-5-5 pending (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V Insulation resistance VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C (construction test only) SYMBOL Vpd VIOTM Vpd RIO RIO RIO MIN. 1.6 8 1.3 1012 1011 109 TYP. MAX. UNIT kV kV kV Ω Ω Ω Ptot - Total Power Dissipation (mW) 300 250 200 Phototransistor Psi (mW) VIOTM t1, t2 t3 , t4 ttest tstres VPd = 1 to 10 s =1s = 10 s = 12 s 150 100 50 0 0 25 50 75 100 125 IR-Diode Isi (mA) 150 VIOWM VIORM 0 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t 94 9182 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-; IEC60747 Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 5 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated SWITCHING CHARACTERISTICS PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time TEST CONDITION VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) SYMBOL td tr tf ts ton toff ton toff MIN TYP. 3 3 4.7 0.3 6 5 9 10 MAX UNIT µs µs µs µs µs µs µs µs IF IF 0 IF +5V IC = 2 mA; adjusted through input amplitude 0 IC 100 % 90 % tp t RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 100 Oscilloscope RL = 1 M CL = 20 pF 10 % 0 tr td t on Pulse Duration Delay Time Rise Time Turn-on Time ts tf t off t Storage Time Fall Time Turn-off Time 95 10804 tp td tr t on (= t d + tr) 96 11698 ts tf t off (= ts + tf) Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times IF 0 IF = 10 mA +5V IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 6 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ptot - Total Power Dissipation (mW) 300 250 200 Phototransistor 150 IR–Diode 100 50 0 0 20 40 60 80 100 120 10000 ICEO - Collector Dark Current, with open Base (nA) Coupled Device 1000 VCE = 30 V 100 10 V 10 1 0 16738 20 40 60 80 100 120 16736 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature 1000 100 IC - Collector Current (mA) IF - Forward Current (mA) VCE = 5 V 10 100 10 1 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.01 0.1 95 11027 1 10 100 VF - Forward Voltage (V) IF - Forward Current (mA) Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Collector Current vs. Forward Current CTRrel - Relative Current Transfer Ratio 1.20 1.00 0.80 0.60 0.40 0.20 0.00 - 40 - 20 VCE = 5 V IF = 5 mA 100 IC - Collector Current (mA) 20 mA IF = 50 mA 10 10 mA 5 mA 2 mA 1 mA 0.1 1 0 20 40 60 80 100 120 0.1 95 10985 1 10 100 16737 Tamb - Ambient Temperature (°C) VCE - Collector Emitter Voltage (V) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 11 - Collector Current vs. Collector Emitter Voltage Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 7 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated 20 % used ton/toff - Turn-on/Turn-off Time (µs) 1.0 50 Saturated Operation VS = 5 V RL = 1 kΩ VCEsat - Collector Emitter Saturation Voltage (V) 0.8 CTR = 50 % used 0.6 40 30 toff 20 10 0 0 5 10 15 ton 20 0.4 0.2 10 % used 0 1 10 100 95 11028 IC - Collector Current (mA) 95 11031 IF - Forward Current (mA) Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 15 - Turn-on/off Time vs. Forward Current CTR - Current Transfer Ratio (%) 1000 VCE = 5 V 100 10 1 0.1 1 10 100 95 11029 IF - Forward Current (mA) Fig. 13 - Current Transfer Ratio vs. Forward Current ton/toff- Turn-on /Turn-off Time (µs) 10 Non Saturated Operation VS = 5 V RL = 100 Ω 8 6 ton toff 4 2 0 0 2 4 6 8 95 11030 IC - Collector Current (mA) Fig. 14 - Turn-on/off Time vs. Collector Current www.vishay.com 8 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated PACKAGE DIMENSIONS in millimeters < 4.75 3.6 ± 0.1 4.4 ± 0.2 4.5 ± 0.2 6.3 ± 0.1 7.62 nom. 0.53 ± 0.05 1.32 ± 0.05 2.54 nom. 3.3 0.25 ± 0.0 5 9 ± 0.8 43 E. g.: Special Features: Endstackable to 2.54 mm (0.100") Spacing Weight: ca. 0.25 g Creepage Distance: > 6 mm Air Path: > 6 mm after Mounting on PC Board 12 2.54 2.54 14789 technical drawings according to DIN specifications < 4.75 7.25 ± 0.2 3.6 ± 0.1 4.5 ± 0.2 6.3 ± 0.1 7.62 nom. 4.4 ± 0.2 0.25 ± 0.05 technical drawings according to DIN specifications 14792 0.53 ± 0.05 1.32 ± 0.05 2.54 nom. 10.16 ± 0.3 E. g.: Special Features: Endstackable to 2.54 mm (0.100") Spacing 43 12 Weight: ca. 0.25 g Creepage Distance: > 8 mm Air Path: > 8 mm after Mounting on PC Board 2.54 2.54 Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 9 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 10 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83546 Rev. 1.8, 21-Nov-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1