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TLMB1100

TLMB1100

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    TLMB1100 - Ultrabright 0603 LED - Vishay Siliconix

  • 数据手册
  • 价格&库存
TLMB1100 数据手册
VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors Ultrabright 0603 LED Description The new 0603 LED series have been designed in the smallest SMD package. This innovative 0603 LED technology opens the way to • smaller products of higher performance • more design in flexibility • enhanced applications The 0603 LED is an obvious solution for small-scale, high power products that are expected to work reliability in an arduous environment. 18562 e3 Pb Pb-free Features • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm (L x W x H) • High reliability lead frame based • Temperature range - 40 °C to + 100 °C • Footprint compatible to 0603 chipled • Wavelength 470 nm (blue), 570 nm (green), 560 nm (pure green), 587 nm (yellow), 606 nm orange), 633 nm (red) • AllnGaP and GaN technology • Viewing angle: extremely wide 160 ° • Grouping parameter: luminous intensity, wavelength • Available in 8 mm tape • IR reflow and TTW soldering • Lead-free device Applications Backlight keypads Navigation systems Cellular phone displays Displays for industrial control systems Automotive features Miniaturized color effects Traffic displays Parts Table Part TLMS1100 TLMO1100 TLMY1100 TLMG1100 TLMP1100 TLMB1100 Color, Luminous Intensity Red, IV = 63 mcd (typ.) Orange, IV = 80 mcd (typ.) Yellow, IV = 80 mcd (typ.) Green, IV = 35 mcd (typ.) Pure green, IV = 15 mcd (typ.) Blue, IV = 5 mcd (typ.) Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 1 TLMB / G / O / P / S / Y1100 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS1100 ,TLMO1100 ,TLMY1100 ,TLMG1100, TLMP1100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient TLMB1100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient acc. Vishay spec mounted on PC board (pad size > 5 mm2) Tamb ≤ 60 °C tp ≤ 10 µs Tamb ≤ 60 °C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 15 0.1 68 100 - 40 to + 100 - 40 to + 100 260 480 acc. Vishay spec mounted on PC board (pad size > 5 mm2) Tamb ≤ 60 °C tp ≤ 10 µs Tamb ≤ 75 °C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 12 30 0.5 90 120 - 40 to + 100 - 40 to + 100 260 480 VISHAY Unit V mA A mW °C °C °C °C K/W Unit V mA A mW °C °C °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS1100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 32 627 Typ. 63 633 645 ± 80 2.1 Max 639 Unit mcd nm nm deg Dominant wavelength 3.0 V V pF 6 15 in one Packing Unit IVmax/IVmin ≤ 1.6 www.vishay.com 2 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY Orange TLMO1100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) TLMB / G / O / P / S / Y1100 Vishay Semiconductors Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA I R = 10 µ A VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 50 600 Typ. 80 606 610 ± 80 2.1 Max 609 Unit mcd nm nm deg Dominant wavelength 3 V V pF 6 15 in one Packing Unit IVmax/IVmin ≤ 1.6 Yellow TLMY1100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA I R = 10 µ A VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 50 580 Typ. 80 587 591 ± 80 2.1 Max 595 Unit mcd nm nm deg Dominant wavelength 3 V V pF 6 15 in one Packing Unit IVmax/IVmin ≤ 1.6 Green TLMG1100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA I R = 10 µ A VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 12.5 564 Typ. 35 570 572 ± 80 2.1 Max 575 Unit mcd nm nm deg Dominant wavelength 3.0 V V pF 6 15 in one Packing Unit IVmax/IVmin ≤ 1.6 Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 3 TLMB / G / O / P / S / Y1100 Vishay Semiconductors Pure green TLMP1100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) VISHAY Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 6.3 551 Typ. 15 558 555 ± 80 2.1 Max 566 Unit mcd nm nm deg Dominant wavelength 3 V V pF 6 15 in one Packing Unit IVmax/IVmin ≤ 1.6 Blue TLMB1100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage 1) 1) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA Symbol IV λd λp ϕ VF VR Min 2.8 Typ. 5 466 428 ± 80 3.9 Max Unit mcd nm nm deg Dominant wavelength 4.5 V V 5.0 in one Packing Unit IVmax/IVmin ≤ 1.6 www.vishay.com 4 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors Color Classification Group Blue min -1 -2 -3 -4 -5 -6 Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm 460 464 468 472 464 468 472 476 max Pure Green min 551 554 557 560 563 max 554 557 560 563 566 min 564 566 569 572 Dominant Wavelength (nm) Green max 565 569 572 575 580 583 586 589 592 583 586 589 592 595 600 603 606 609 603 606 609 612 min Yellow max min Orange max Luminous Intensity Classification Group min Pa Pb Qa Qb Ra Rb Sa Sb Ta Tb Ua Ub Va Vb Wa Wb 4 5 6.3 8 10 12.5 16 20 25 32 40 50 63 80 100 125 Luminous Intensity (mcd) max 6.3 8 10 12.5 16 20 25 32 40 50 63 80 100 125 160 200 Group Name on Label Luminous Intensity Group Q Halfgroup b Wavelength 4 Forward Voltage 1 One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage Only one single classification groups is not available The given groups are not order codes, customer specific group combinations require marketing agreement No color subgrouping for Super Red Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 5 TLMB / G / O / P / S / Y1100 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 80 70 60 50 40 30 20 10 0 0 19107 VISHAY 2.0 IVrel–Relative Luminous Intensity 90 PV –Power Dissipation (mW) Orange 1.6 1.2 0.8 0.4 0.0 –20 IF = 20 mA 20 40 60 80 100 120 19088 0 20 40 60 80 100 Tamb – Ambient Temperature ( C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Relative Luminous Intensity vs. Amb. Temperature 40 PV –Power Dissipation (mW) 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 V F –Forward Voltage ( V ) 2.40 Orange 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 0 IF = 20 mA 20 40 60 80 100 19108 Tamb – Ambient Temperature ( C ) 19093 Tamb – Ambient Temperature ( °C ) Figure 2. Power Dissipation vs. Ambient Temperature Figure 5. Forward Voltage vs. Ambient Temperature n l d – Change of Dom. Wavelength (nm) 8 Orange 6 4 2 0 –2 –4 –6 –20 IF = 20 mA 100.00 Orange I F – Forward Current ( mA ) 10.00 19081 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 1.00 1.0 19099 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 3. Change of Dominant Wavelength vs. Ambient Temperature Figure 6. Forward Current vs. Forward Voltage www.vishay.com 6 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors n l d – Change of Dom. Wavelength (nm) 10.00 I Vrel –Relative Luminous Intensity 4 Blue 3 2 1 0 –1 –2 –20 IF = 10 mA Orange 1.00 0.10 0.01 1.00 19109 10.00 IF – Forward Current ( mA ) 100.00 19082 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 7. Relative Luminous Intensity vs. Forward Current Figure 10. Change of Dominant Wavelength vs. Ambient Temperature 100 90 PV –Power Dissipation (mW) Blue IVrel–Relative Luminous Intensity 2.0 Blue 1.6 1.2 0.8 0.4 0.0 –20 19090 IF = 10 mA 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 0 20 40 60 80 100 19105 Tamb – Ambient Temperature ( C ) Tamb – Ambient Temperature ( °C ) Figure 8. Power Dissipation vs. Ambient Temperature Figure 11. Relative Luminous Intensity vs. Amb. Temperature 20 Blue PV –Power Dissipation (mW) V F –Forward Voltage ( V ) 15 10 5 0 0 19106 20 40 60 80 100 120 4.20 Blue 4.15 4.10 4.05 4.00 3.95 3.90 3.85 3.80 3.75 3.70 3.65 3.60 –20 0 IF = 10 mA 20 40 60 80 100 Tamb – Ambient Temperature ( C ) 19094 Tamb – Ambient Temperature ( °C ) Figure 9. Power Dissipation vs. Ambient Temperature Figure 12. Forward Voltage vs. Ambient Temperature Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 7 TLMB / G / O / P / S / Y1100 Vishay Semiconductors VISHAY 100.00 Blue I F – Forward Current ( mA ) IVrel–Relative Luminous Intensity 2.4 Pure Green 2.0 1.6 1.2 0.8 0.4 0.0 –20 19087 IF = 20 mA 10.00 1.00 2 19100 3 4 5 6 VF – Forward Voltage ( V ) 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) 100 Figure 13. Forward Current vs. Forward Voltage Figure 16. Relative Luminous Intensity vs. Amb. Temperature 10.00 I Vrel –Relative Luminous Intensity Blue V F –Forward Voltage ( V ) 1.00 0.10 0.01 1.00 19110 10.00 IF – Forward Current ( mA ) 100.00 2.40 Pure Green 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 0 20 IF = 20 mA 40 60 80 100 19095 Tamb – Ambient Temperature ( °C ) Figure 14. Relative Luminous Intensity vs. Forward Current Figure 17. Forward Voltage vs. Ambient Temperature n l d – Change of Dom. Wavelength (nm) 10 8 6 4 2 0 –2 –4 –6 –20 Pure Green IF = 20 mA 100.00 Pure Green I F – Forward Current ( mA ) 10.00 19083 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 1.00 1.0 19101 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 15. Change of Dominant Wavelength vs. Ambient Temperature Figure 18. Forward Current vs. Forward Voltage www.vishay.com 8 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors 10.00 I Vrel –Relative Luminous Intensity Pure Green 1.00 0.10 0.01 1.00 19111 10.00 IF – Forward Current ( mA ) 100.00 2.40 IF = 20 mA Green 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 0 20 40 60 80 19096 Tamb – Ambient Temperature ( °C ) V F –Forward Voltage ( V ) 100 Figure 19. Relative Luminous Intensity vs. Forward Current Figure 22. Forward Voltage vs. Ambient Temperature n l d – Change of Dom. Wavelength (nm) 10 8 6 4 2 0 –2 –4 –6 –20 Green IF = 20 mA 100.00 Green I F – Forward Current ( mA ) 10.00 19084 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 1.00 1.0 19102 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 20. Change of Dominant Wavelength vs. Ambient Temperature Figure 23. Forward Current vs. Forward Voltage 2.4 IVrel–Relative Luminous Intensity Green 2.0 1.6 1.2 0.8 0.4 0.0 –20 I Vrel –Relative Luminous Intensity IF = 20 mA 10.00 Green 1.00 0.10 19089 80 Tamb – Ambient Temperature ( °C ) 0 20 40 60 100 19112 0.01 1.00 10.00 IF – Forward Current ( mA ) 100.00 Figure 21. Relative Luminous Intensity vs. Amb. Temperature Figure 24. Relative Luminous Intensity vs. Forward Current Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 9 TLMB / G / O / P / S / Y1100 Vishay Semiconductors VISHAY n l d – Change of Dom. Wavelength (nm) 8 Yellow 6 4 2 0 –2 –4 –6 –20 IF = 20 mA 100.00 Yellow I F – Forward Current ( mA ) 10.00 19085 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 1.00 1.0 19104 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 25. Change of Dominant Wavelength vs. Ambient Temperature Figure 28. Forward Current vs. Forward Voltage 2.0 IVrel–Relative Luminous Intensity I Vrel –Relative Luminous Intensity Yellow 1.6 1.2 0.8 0.4 0.0 –20 IF = 20 mA 10.00 Yellow 1.00 0.10 0 20 40 60 80 100 19114 19092 Tamb – Ambient Temperature ( °C ) 0.01 1.00 10.00 IF – Forward Current ( mA ) 100.00 Figure 26. Relative Luminous Intensity vs. Amb. Temperature Figure 29. Relative Luminous Intensity vs. Forward Current 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 n l d – Change of Dom. Wavelength (nm) 4 3 2 1 0 –1 –2 –3 –4 –20 Red IF = 20 mA Yellow IF = 20 mA V F –Forward Voltage ( V ) 19097 80 Tamb – Ambient Temperature ( °C ) 0 20 40 60 100 19086 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 27. Forward Voltage vs. Ambient Temperature Figure 30. Change of Dominant Wavelength vs. Ambient Temperature www.vishay.com 10 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors 2.0 IVrel–Relative Luminous Intensity I Vrel –Relative Luminous Intensity Red 1.6 1.2 0.8 0.4 0.0 –20 IF = 20 mA 10.00 Red 1.00 0.10 19091 20 40 60 80 Tamb – Ambient Temperature ( °C ) 0 100 19113 0.01 1.00 10.00 IF – Forward Current ( mA ) 100.00 Figure 31. Relative Luminous Intensity vs. Amb. Temperature Figure 34. Relative Luminous Intensity vs. Forward Current 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 –20 Red IF = 20 mA V F –Forward Voltage ( V ) 0 20 40 60 80 100 19098 Tamb – Ambient Temperature ( °C ) Figure 32. Forward Voltage vs. Ambient Temperature 100.00 Red I F – Forward Current ( mA ) 10.00 1.00 1.0 19103 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 33. Forward Current vs. Forward Voltage Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 11 TLMB / G / O / P / S / Y1100 Vishay Semiconductors Reel Dimensions VISHAY 19043 www.vishay.com 12 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY Tape Dimensions TLMB / G / O / P / S / Y1100 Vishay Semiconductors 19044 Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 13 TLMB / G / O / P / S / Y1100 Vishay Semiconductors Package Dimensions in mm VISHAY 18561 www.vishay.com 14 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 15
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