TSML3700

TSML3700 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3700 is an infrared emitting diode in GaAlAs on GaAs technology in a miniature PL–CC–2 SMD package. It has been designed to meet the increasing demand on optoelectronic devices for surface mounting. The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy. This new package achieves an improvement of 100% in radiant intensity, compared with the old SOT–23 package. 94 8553 Features D D D D D D D D D D D SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process Available in 8 mm tape Suitable for pulse current operation Extra wide angle of half intensity ϕ = ± 60° Peak wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor Applications Infrared source in tactile keyboards IR diode in low space applications Matching with phototransistor TEMT3700 in reflective sensors High performance PCB mounted infrared sensors High power infrared emitter for miniature light barriers Document Number 81034 Rev. 3, 20-May-99 www.vishay.com 1 (6) TSML3700 Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions tp/T = 0.5, tp = 100 ms tp = 100 ms Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W t x10sec Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.3 2.2 –1.3 20 7 60 32 –0.8 ±60 925 50 0.2 800 500 800 500 Max 1.7 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns 100 2.5 fe TKlp tr tr tf tf lp Dl www.vishay.com 2 (6) Document Number 81034 Rev. 3, 20-May-99 TSML3700 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 104 103 150 RthJA 100 102 tp = 100 ms tp / T = 0.001 101 50 0 0 20 40 60 80 100 100 0 94 7952 e 1 2 3 4 94 8029 e Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 125 100 V Frel – Relative Forward Voltage IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage 1.2 1.1 IF = 10 mA 1.0 0.9 75 RthJA 50 25 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 94 7916 e Tamb – Ambient Temperature ( °C ) 94 7990 e Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 100 I e – Radiant Intensity ( mW/sr ) 10000 Tamb IF – Forward Current ( mA ) tp/T=0.005 1000 0.01 0.02 v60°C 0.05 10 100 0.2 0.5 DC 1 10 0.1 1 0.01 95 9985 0.1 0.1 1 10 100 15903 100 tp – Pulse Length ( ms ) 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81034 Rev. 3, 20-May-99 www.vishay.com 3 (6) TSML3700 Vishay Telefunken 1000 1.25 Fe rel – Relative Radiant Power Fe – Radiant Power ( mW ) 100 1.0 0.75 0.5 10 1 0.25 IF = 100 mA 0 875 0.1 100 94 8740 101 102 103 IF – Forward Current ( mA ) 104 12757 l – Wavelength ( nm ) 0° 10 ° 20 ° 925 975 Figure 7. Radiant Power vs. Forward Current 1.6 Figure 9. Relative Radiant Power vs. Wavelength 30° 1.2 I e rel ; Fe rel IF = 20 mA 0.8 I e rel – Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.4 0 –10 0 10 94 7993 e 50 100 140 94 8013 e Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.com 4 (6) Document Number 81034 Rev. 3, 20-May-99 TSML3700 Vishay Telefunken Dimensions in mm 95 11314 Document Number 81034 Rev. 3, 20-May-99 www.vishay.com 5 (6) TSML3700 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 6 (6) Document Number 81034 Rev. 3, 20-May-99