V60100C-M3-4W

New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS ® TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in • Halogen-free according to IEC 61249-2-21 definition 2 V60100C PIN 1 PIN 3 3 1 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 100 V 320 A 0.66 V 150 °C Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) IFSM EAS IRRM dV/dt TJ, TSTG SYMBOL VRRM V60100C 100 60 A 30 320 450 1.0 10 000 - 40 to + 150 A mJ A V/µs °C UNIT V Document Number: 89155 Revision: 17-Nov-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product V60100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 1 5 A IF = 2 0 A Instantaneous forward voltage per diode IF = 3 0 A IF = 5 A IF = 10 A IF = 1 5 A IF = 2 0 A IF = 3 0 A VR = 8 0 V Reverse current at rated VR per diode VR = 100 V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C VF (1) TA = 25 °C TA = 25 °C SYMBOL VBR TYP. 100 (minimum) 0.45 0.52 0.58 0.63 0.73 0.36 0.45 0.53 0.58 0.66 24 13 65 30 MAX. 0.63 0.79 0.58 0.70 500 20 1000 µA mA µA mA V UNIT V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V60100C 2.5 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB PREFERRED P/N V60100C-M3/4W UNIT WEIGHT (g) 1.89 PACKAGE CODE 4W BASE QUANTITY 50/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 Resistive or Inductive Load 60 30 D = 0.8 25 D = 0.5 D = 0.3 20 D = 1.0 D = 0.2 15 D = 0.1 T 10 Average Forward Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Average Power Loss (W) 5 D = tp/T tp 0 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89155 Revision: 17-Nov-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com New Product V60100C Vishay General Semiconductor 100 10 000 TA = 150 °C TA = 125 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 Junction Capacitance (pF) 0.8 1 TA = 100 °C 1 TA = 25 °C 1000 0.1 0 0.2 0.4 0.6 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1000 10 100 TA = 150 °C TA = 125 °C TA = 100 °C 10 1 Transient Thermal Impedance (°C/W) 60 70 80 90 100 Instantaneous Reverse Current (mA) 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 Document Number: 89155 Revision: 17-Nov-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1