VO3120

VO3120 Vishay Semiconductors 2.5 A Output Current IGBT and MOSFET Driver FEATURES NC A C NC 20530_1 1 2 3 4 8 7 6 5 VCC VO VO VEE Shield V DE 19813 • 2.5 A minimum peak output current • 25 kV/μs minimum common mode rejection (CMR) at VCM = 1500 V • ICC = 2.5 mA maximum supply current • Under voltage lock-out (UVLO) with hysteresis • Wide operating VCC range: 15 V to 32 V • 0.2 μs maximum pulse width distortion • Industrial temperature range: - 40 °C to 110 °C • 0.5 V maximum low level output voltage (VOL) • Reinforced insulation rated per DIN EN 60747-5-2 • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The VO3120 consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and current supplied by this optocoupler makes it ideally suited for directly driving IGBTs with ratings up to 800 V/50 A. For IGBTs with higher ratings, the VO3120 can be used to drive a discrete power stage which drives the IGBT gate. APPLICATIONS • • • • • • Isolated IGBT/MOSFET gate driver AC and brushless DC motor drives Induction stove top Industrial inverters Switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) AGENCY APPROVALS • UL - file no. E52744 system code H, double protection • cUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2 (VDE 0884) and reinforced insulation rating available with option 1 ORDERING INFORMATION DIP-8 Option 7 V O 3 1 2 0 - X 0 # # T TAPE AND REEL UL, cUL, VDE VO3120 VO3120-X001 VO3120-X007T 7.62 mm > 0.7 mm PART NUMBER PACKAGE OPTION PACKAGE DIP-8, tubes DIP-8, tubes SMD-8, option 7, tape and reel TRUTH TABLE LED Off On On On VCC - VEE “POSITIVE GOING” (TURN ON) 0 V to 32 V 0 V to 11 V 11 V to 13.5 V 13.5 V to 32 V VCC - VEE “NEGATIVE GOING” (TURN OFF) 0 V to 32 V 0 V to 9.5 V 9.5 V to 12 V 12 V to 32 V VO Low Low Transition High Document Number: 81314 Rev. 1.3, 15-Mar-11 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 Vishay Semiconductors 2.5 A Output Current IGBT and MOSFET Driver ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Input forward current Peak transient input current Reverse input voltage Output power dissipation OUTPUT High peak output current (1) Low peak output current (1) Supply voltage Output voltage Output power dissipation OPTOCOUPLER Isolation test voltage (between emitter and detector) Storage temperature range Ambient operating temperature range Total power dissipation Lead solder temperature (2) For 10 s, 1.6 mm below seating plane t=1s VISO TS TA Ptot 5300 - 55 to + 125 - 40 to + 110 295 260 VRMS °C °C mW °C IOH(PEAK) IOL(PEAK) (VCC - VEE) VO(PEAK) Pdiss 2.5 2.5 0 to + 35 0 to + VCC 250 A A V V mW < 1 μs pulse width, 300 pps IF IF(TRAN) VR Pdiss 25 1 5 45 mA A V mW TEST CONDITION SYMBOL VALUE UNIT Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with IO peak minimum = 2.5 A. See applications section for additional details on limiting IOH peak. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). RECOMMENDED OPERATING CONDITION PARAMETER Power supply voltage Input LED current (on) Input voltage (off) Operating temperature SYMBOL VCC - VEE IF VF(OFF) Tamb MIN. 15 7 -3 - 40 MAX. 32 16 0.8 + 110 UNIT V mA V °C www.vishay.com 2 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81314 Rev. 1.3, 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 2.5 A Output Current IGBT and MOSFET Driver THERMAL CHARACTERISTICS PARAMETER LED power dissipation Output power dissipation Total power dissipation Maximum LED junction temperature Maximum output die junction temperature Thermal resistance, junction emitter to board Thermal resistance, junction emitter to case Thermal resistance, junction detector to board Thermal resistance, junction detector to case Thermal resistance, junction emitter to junction detector Thermal resistance, case to ambient SYMBOL Pdiss Pdiss Ptot Tjmax. Tjmax. JEB JEC JDB JDC JED CA VALUE 45 250 285 125 125 169 192 82 80 200 2645 UNIT mW mW mW °C °C θDC TC θCA Package θEC θDE TJE TA Vishay Semiconductors °C/W °C/W °C/W °C/W TJD θDB TB θBA θEB °C/W °C/W 19996 TA Note • The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note. ELECTRICAL CHARACTERISTICS PARAMETER High level output current Low level output current High level output voltage Low level output voltage High level supply current Low level supply current Threshold input current low to high Threshold input voltage high to low Input forward voltage Temperature coefficient of forward voltage Input reverse breakdown voltage Input capacitance UVLO threshold UVLO hysteresis IF = 10 mA IF = 10 mA IR = 10 μA f = 1 MHz, VF = 0 V VO  5 V IF = 10 mA TEST CONDITION VO = (VCC - 4 V) VO = (VCC - 15 V) VO = (VEE + 2.5 V) VO = (VEE + 15 V) IO = - 100 mA IO = 100 mA Output open, IF = 7 mA to 16 mA Output open, VF = - 3 V to + 0.8 V IO = 0 mA, VO > 5 V SYMBOL IOH (1) IOH (2) IOL (1) MIN. 0.5 2.5 0.5 2.5 VCC - 4 TYP. MAX. UNIT A A A A V IOL (2) VOH (3) VOL ICCH ICCL IFLH VFHL VF VF/TA BVR CIN VUVLO + VUVLO UVLOHYS 0.2 0.5 2.5 2.5 5 V mA mA mA V V mV/°C V pF 0.8 1 - 1.4 5 60 11 9.5 1.6 13.5 12 1.6 V V V Notes • Minimum and maximum values were tested over recommended operating conditions (TA = - 40 °C to 110 °C, IF(ON) = 7 mA to 16 mA, VF(OFF) = - 3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values were measured at Tamb = 25 °C and with VCC - VEE = 32 V. (1) Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %. (2) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with IO peak minimum = 2.5 A. (3) In this test V OH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero A. Maximum pulse width = 1 ms, maximum duty cycle = 20 %. Document Number: 81314 Rev. 1.3, 15-Mar-11 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 Vishay Semiconductors TEST CIRCUITS 2.5 A Output Current IGBT and MOSFET Driver 1 8 0.1 µF + 4V + VCC = 15 V to 32 V 1 8 0.1 µF 100 mA + VCC = 15 V to 32 V 2 IF = 7 mA to 16 mA 7 2 7 6 3 6 IOH 3 4 VOL 4 5 5 20973-2 20974-1 Fig. 1 - IOH Test Circuit Fig. 4 - VOL Test Circuit 1 8 0.1 µF I OL + + VCC = 15 V to 32 V 1 2 IF 8 0.1 µF 2 7 7 + VO > 5 V VCC = 15 V to 32 V 3 6 5 2.5 V 3 4 6 5 4 20975-1 20976-1 Fig. 2 - IOL Test Circuit Fig. 5 - IFLH Test Circuit 1 8 0.1 µF VOH + VCC = 15 V to 32 V IF = 10 mA 1 8 0.1 µF 2 I F = 7 mA to 16 mA 7 2 7 + VO > 5 V VCC 3 6 100 mA 3 4 20978 6 5 4 20977-1 5 Fig. 3 - VOH Test Circuit Fig. 6 - UVLO Test Circuit SWITCHING CHARACTERISTICS PARAMETER Propagation delay time to logic low output (1) Propagation delay time to logic high output (1) Pulse width distortion (2) Rise time TEST CONDITION Rg = 10 , Cg = 10 nF, f = 10 kHz, duty cycle = 50 % Rg = 10 , Cg = 10 nF, f = 10 kHz, duty cycle = 50 % Rg = 10 , Cg = 10 nF, f = 10 kHz, duty cycle = 50 % Rg = 10 , Cg = 10 nF, f = 10 kHz, duty cycle = 50 % SYMBOL tPHL tPLH PWD tr 0.1 MIN. 0.1 0.1 TYP. MAX. 0.4 0.4 0.2 UNIT μs μs μs μs www.vishay.com 4 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81314 Rev. 1.3, 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 2.5 A Output Current IGBT and MOSFET Driver SWITCHING CHARACTERISTICS PARAMETER Fall time UVLO turn on delay UVLO turn off delay TEST CONDITION Rg = 10 , Cg = 10 nF, f = 10 kHz, duty cycle = 50 % VO > 5 V, IF = 10 mA VO < 5 V, IF = 10 mA SYMBOL tf TUVLO-ON TUVLO-OFF MIN. TYP. 0.1 0.8 0.6 MAX. UNIT μs μs μs Vishay Semiconductors Notes (1) This load condition approximates the gate load of a 1200 V/75 A IGBT. (2) Pulse width distortion (PWD) is defined as |t PHL-tPLH| for any given device. (3) The difference between t PHL and tPLH between any two VO3120 parts under the same test condition. 1 I F = 7 mA to 16 mA 8 0.1 µF IF + 10 kHz 50 % Duty Cycle 500 Ω 2 7 + VO VCC = 15 V to 32 V tr tf 90 % 50 % 3 6 10 Ω 10 nF OUT 10 % 4 20979-1 5 t PLH t PHL Fig. 7 - tPLH, tPHL, tr and tf Test Circuit and Waveforms COMMON MODE TRANSIENT IMMUNITY PARAMETER Common mode transient immunity at logic high output (1)(2) Common mode transient immunity at logic low output (1)(3) TEST CONDITION TA = 25 °C, IF = 10 mA to 16 mA, VCM = 1500 V, VCC = 32 V TA = 25 °C, VCM = 1500 V, VCC = 32 V, VF = 0 V SYMBOL |CMH| |CML| MIN. 25 25 TYP. 35 35 MAX. UNIT kV/μs kV/μs Notes (1) Pins 1 and 4 need to be connected to LED common. (2) Common mode transient immunity in the high state is the maximum tolerable |dV CM/dt| of the common mode pulse, VCM, to assure that the output will remain in the high state (i.e., VO > 15 V). (3) Common mode transient immunity in a low state is the maximum tolerable |dV CM/dt| of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e., VO < 1 V). 1 IF 8 0.1 µF dV dt = VCM Dt A R 5V + 2 7 VO 0V + VCC = 32 V Dt VOH 3 6 VO Switch at A: IF = 10 mA 4 5 VO Switch at B: IF = 0 mA VOL 20980-1 VCM = 1500 V + Fig. 8 - CMR Test Circuit and Waveforms Document Number: 81314 Rev. 1.3, 15-Mar-11 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 Vishay Semiconductors 2.5 A Output Current IGBT and MOSFET Driver SAFETY AND INSULATION RATINGS PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index Peak transient overvoltage Peak insulation voltage Safety rating - power output Safety rating - input current Safety rating - temperature Creepage distance Clearance distance Creepage distance Clearance distance Standard DIP-8 Standard DIP-8 400 mil DIP-8 400 mil DIP-8 CTI VIOTM VIORM PSO ISI TSI 7 7 8 8 175 8000 890 500 300 175 TEST CONDITION SYMBOL MIN. TYP. 40/110/21 399 V V mW mA °C mm mm mm mm MAX. UNIT Note • As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is reinforced rated and suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0.0 0.35 IF = 16 mA IOUT = - 100 mA VCC = 32 V VEE = 0 V VOL - Output Low Voltage (V) VOH - VCC - High Output Voltage Drop (V) - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.30 0.25 0.20 0.15 0.10 0.05 0.00 - 40 - 20 VF = 0.8 V IOUT = 100 mA VCC = 32 V VEE = 0 V 0 20 40 60 80 100 120 - 3.0 - 40 - 20 21745 0 20 40 60 80 100 120 Temperature (°C) 21748 Temperature (°C) Fig. 9 - High Output Voltage Drop vs. Temperature Fig. 11 - Output Low Voltage vs. Temperature 4 3.5 IOL - Output Low Current (A) IOH - High Output Current (A) 3 2.5 IF = 0 mA Vout = 2.5 V VCC = 15 V VEE = 0 V 2 IF = 16 mA Vout = (VCC - 4) V VCC = 15 V VEE = 0 V 0 20 40 60 80 100 120 1.5 1 0 - 40 - 20 21746 Temperature (°C) 0.5 - 40 - 20 0 20 40 60 80 100 Temperature (°C) 21751 Fig. 12 - Output Low Current vs. Temperature Fig. 10 - High Output Current vs. Temperature www.vishay.com 6 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81314 Rev. 1.3, 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 2.5 A Output Current IGBT and MOSFET Driver Vishay Semiconductors 5 2.5 VOL - Output Low Voltage (V) 4 3 ICC - Supply Current (mA) IF = 0 mA VCC = 15 V VEE = 0 V 110 °C 2.0 1.5 1.0 IF = 10 mA for ICCH IF = 0 mA for ICCL TA = 25 °C VEE = 0 V ICCH 25 °C 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 40 °C ICCL 0.5 0.0 15 20 25 30 35 21747 IOL - Output Low Current (A) 21711 VCC - Supply Voltage (V) Fig. 16 - Supply Current vs. Supply Voltage Fig. 13 - Output Low Voltage vs. Output Low Current (VOH - VCC) Output High Voltage Drop (V) 0 110 °C 5.0 4.5 IFLH - Low to High Current Threshold (mA) -2 -4 -6 -8 - 10 - 12 0 0.5 1 1.5 2 IOH - Output High Current (A) 2.5 IF = 16 mA VCC = 15 V VEE = 0 V - 40 °C 25 °C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 - 40 - 20 0 20 40 VCC = 32 V VEE = 0 V Output = open 60 80 100 120 21749 21750 Temperature (°C) Fig. 14 - Output High Voltage Drop vs. Output High Current Fig. 17 - Low to High Current Threshold vs. Temperature 2.5 35 TA = 25 °C ICC - Supply Current (mA) 2.0 1.5 ICCH 1.0 0.5 0 - 40 - 20 0 20 40 60 80 100 120 IF = 16 mA for ICCH IF = 0 mA for ICCL VCC = 32 V VEE = 0 V ICCL VO - Output Voltage (V) 30 25 20 15 10 5 0 0 1 2 3 4 5 21754 Temperature (°C) Fig. 15 - Supply Current vs. Temperature 21752 IF - Forward LED Current (mA) Fig. 18 - Transfer Characteristics Document Number: 81314 Rev. 1.3, 15-Mar-11 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 Vishay Semiconductors 2.5 A Output Current IGBT and MOSFET Driver 500 500 tp - Propagation Delay (ns) tp - Propagation Delay (ns) 400 IF = 10 mA, TA = 25 °C Rg = 10 Ω, Cg = 10 nF Duty cycle = 50 % f = 10 kHz 400 300 200 100 0 VCC = 30 V, VEE = 0 V IF = 10 mA, TA = 25 °C Cg = 10 nF Duty cycle = 50 % f = 10 kHz 300 tPHL 200 tPLH 100 15 20 25 30 35 tPLH tPHL 0 21717 10 20 30 40 50 21714 VCC - Supply Voltage (V) Fig. 19 - Propagation Delay vs. Supply Voltage Rg - Series Load Resistance (Ω) Fig. 22 - Propagation Delay vs. Series Load Resistance 500 500 tp - Propagation Delay (ns) 400 300 200 100 tp - Propagation Delay (ns) VCC = 32 V, VEE = 0 V IF = 10 mA Rg = 10 Ω, Cg = 10 nF Duty cycle = 50 % f = 10 kHz 400 300 200 tPHL VCC = 30 V, VEE = 0 V IF = 10 mA, TA = 25 °C Rg = 10 Ω Duty cycle = 50 % f = 10 kHz tPLH tPLH tPHL 100 0 0 - 40 21753 - 15 10 35 60 85 110 21718 0 20 40 60 80 100 TA - Temperature (°C) Fig. 20 - Propagation Delay vs. Temperature Cg - Series Load Capacitance (nF) Fig. 23 - Propagation Delay vs. Series Load Capacitance 500 tp - Propagation Delay (ns) 400 300 200 VCC = 30 V, VEE = 0 V TA = 25 °C Rg = 10 Ω, Cg = 10 nF Duty cycle = 50 % f = 10 kHz tPHL tPLH 100 0 6 8 10 12 14 16 21716 IF - Forward LED Current (mA) Fig. 21 - Propagation Delay vs. Forward LED Current www.vishay.com 8 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81314 Rev. 1.3, 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO3120 2.5 A Output Current IGBT and MOSFET Driver PACKAGE DIMENSIONS in millimeters Pin one ID 4 6.645 ± 0.165 3 2 1 Vishay Semiconductors 5 6 7 8 ISO method A 9.77 ± 0.14 0.95 ± 0.19 7.62 typ. 0.79 4° typ. 3.555 ± 0.255 6.095 ± 0.255 1.27 0.70 ± 0.19 0.51 ± 0.05 2.54 typ. i178006 10° 3.045 ± 0.255 3° to 9° 0.25 ± 0.05 Option 7 7.62 typ. 0.7 4.6 4.1 8 min. 8.4 min. 10.3 max. 18450-4 PACKAGE MARKING VO3120 X007 V YWW H 68 21764-42 Notes • The VDE logo is only marked on option 1 parts. • Tape and reel suffix (T) is not part of the package marking. Document Number: 81314 Rev. 1.3, 15-Mar-11 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 9 This datasheet is subject to change without notice. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1