VSKDS403

VSKDS403/100P Vishay High Power Products Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • UL pending ADD-A-PAK • Totally lead (Pb)-free, RoHS compliant • Designed and qualified for industrial level PRODUCT SUMMARY IF(AV) 200 A MECHANICAL DESCRIPTION The Generation 5 of ADD-A-PAK module combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of ADD-A-PAK module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. DESCRIPTION The VSKDS403.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 µs sine 200 Apk, TJ = 125 °C Range CHARACTERISTICS Rectangular waveform VALUES 200 100 25 500 0.8 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VSKDS403/100P 100 UNITS V Document Number: 94451 Revision: 25-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 VSKDS403/100P Vishay High Power Products Schottky Rectifier, 200 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TEST CONDITIONS 50 % duty cycle at TC = 107 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 200 25 500 3300 15 1 mJ A A UNITS TJ = 25 °C, IAS = 5.5 Amps, L = 1 mH Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 200 A Maximum forward voltage drop VFM (1) 400 A 200 A 400 A Maximum reverse leakage current Maximum junction capacitance Typical series inductance Maximum voltage rate of change RMS insulation voltage Note (1) Pulse width < 500 µs IRM (1) CT LS dV/dt VINS TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C VALUES 0.93 1.24 0.8 1.05 6 80 5500 5.0 10 000 3500 mA pF nH V/µs V V UNITS TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C From top of terminal hole to mounting plane Rated VR 50 Hz, circuit to base, all terminals shorted (1 s) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, case to heatsink Approximate weight to heatsink busbar JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 0.30 °C/W 0.1 110 4 5 4 g oz. Nm TO-240AA UNITS °C Mounting torque ± 10 % Case style www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94451 Revision: 25-Apr-08 VSKDS403/100P Schottky Rectifier, 200 A Vishay High Power Products 1000 Reverse Current - IR (mA) 10 00 10 0 1 0 T =1 5 C 7° J 1 0C 5° 1 5C 2° 1 0C 0° Tj = 175°C 1 .1 .0 1 .0 1 0 0 7° 5C 5° 0C 2° 5C Instantaneous Forward Current - IF (A) 100 2 0 4 0 6 0 8 0 10 0 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 Junction Capacitance - CT (pF) 10 Tj = 125°C Tj = 25°C Tj = 25°C 1 0.0 0.5 1.0 1.5 2.0 1000 0 10 20 30 40 50 60 70 80 90 100 Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance ZthJC (°C/W) D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 1E+01 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94451 Revision: 25-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 VSKDS403/100P Vishay High Power Products Schottky Rectifier, 200 A 180 Allowable Case Temperature (°C) Average Power Loss - (Watts) 250 Square wave (D=0.50) 80% rated Vr applied 160 140 120 100 80 60 40 20 0 0 100 200 see note (1) RMS limit 200 180° 120° 90° 60° 30° DC 150 DC 100 50 0 300 400 500 600 0 50 100 150 200 250 300 Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM (A) 100000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge 10000 1000 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94451 Revision: 25-Apr-08 VSKDS403/100P Schottky Rectifier, 200 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS 1 KD 2 S 3 40 4 3 5 / 100 6 P 7 1 2 3 4 5 6 7 - Vishay HPP Circuit configuration: KD = ADD-A-PAK - 2 diodes in series S = Schottky diode Average rating (x 10) Product silicon identification Voltage rating (100 = 100 V) Lead (Pb)-free CIRCUIT CONFIGURATION (1) ~ (2) + (3) - LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95174 Document Number: 94451 Revision: 25-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1