VSKDS409_11

VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • • • • • • 175 °C TJ operation Low forward voltage drop High frequency operation Low thermal resistance Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS ADD-A-PAK PRODUCT SUMMARY IF(AV) 200 A • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION The VSKDS409/150 Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 200 Apk, TJ = 125 °C Range CHARACTERISTICS Rectangular waveform VALUES 200 150 20 000 0.85 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum static peak reverse voltage SYMBOL VR VRRM VSKDS409/150 150 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current Maximum dynamic peak reverse voltage SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR VAV TEST CONDITIONS 50 % duty cycle at TC = 105 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 200 20 000 2300 15 1 170 mJ A V A UNITS TJ = 25 °C, IAS = 1.8 A, L = 10 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical TJ = 25 °C, IAS = 1.8 A, L = 10 mH Document Number: 94649 Revision: 13-Jan-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 200 A Maximum forward voltage drop VFM 400 A 200 A 400 A Maximum reverse leakage current Maximum junction capacitance Typical series inductance Maximum voltage rate of change Maximum RMS insulation voltage IRM CT LS dV/dt VINS TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 1.03 1.33 0.85 1.13 6 85 6000 5.0 10 000 3000 (1 min) 3600 (1 s) mA pF nH V/μs V V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR 50 Hz THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink per module Approximate weight to heatsink Mounting torque ± 10 % busbar Case style A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation TEST CONDITIONS VALUES - 55 to 175 0.32 °C/W 0.1 75 2.7 4 Nm 3 TO-240AA compatible g oz. UNITS °C www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94649 Revision: 13-Jan-11 VSKDS409/150 ADD-A-PAK Generation VII Vishay Semiconductors Power Modules Schottky Rectifier, 200 A IF - Instantaneous Forward Current (A) 1000 1000 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 0.01 0.001 0.5 1.0 1.5 2.0 94649_02 IR - Reverse Current (mA) 100 10 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 TJ = 50 °C TJ = 25 °C 1 0.0 0 25 50 75 100 125 150 94649_01 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 10 000 CT - Junction Capacitance (pF) TJ = 25 °C 1000 100 0 94649_03 20 40 60 80 100 120 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (thermal resistance) 0.001 0.0001 94649_04 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94649 Revision: 13-Jan-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSKDS409/150 Vishay Semiconductors 180 160 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A 300 Allowable Case Temperature (°C) Average Power Loss (W) 250 200 150 100 140 120 100 80 60 40 20 0 0 100 200 300 400 500 Square wave (D = 0.50) 80 % rated VR applied See note (1) DC 180° 120° 90° 60° 30° RMS limit DC 50 0 0 50 100 150 200 250 300 94649_05 IF(AV) - Average Forward Current (A) 94649_06 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 100 1000 10 000 94649_07 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94649 Revision: 13-Jan-11 VSKDS409/150 ADD-A-PAK Generation VII Vishay Semiconductors Power Modules Schottky Rectifier, 200 A ORDERING INFORMATION TABLE Device code VS 1 1 2 3 4 5 6 - KD 2 S 3 40 4 9 5 / 150 6 Vishay Semiconductors product Circuit configuration: KD = ADD-A-PAK - 2 diodes in series S = Schottky diode Average current rating (40 = 400 A) (1) Product silicon identification Voltage rating (150 = 150 V) Note (1) For KD configuration average current rating per module is 200 A CIRCUIT CONFIGURATION (1) ~ (2) + (3) - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95369 Document Number: 94649 Revision: 13-Jan-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) Viti M5 x 0.8 Screws M5 x 0.8 18 (0.7) REF. 6.7 ± 0.3 (0.26 ± 0.012) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 29 ± 0.5 (1 ± 0.020) 80 ± 0.3 (3.15 ± 0.012) 22.6 ± 0.2 (0.89 ± 0.008) 2 3 76 6.3 ± 0.2 (0.248 ± 0.008) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 1 45 24 ± 0.5 (1 ± 0.020) Document Number: 95369 Revision: 11-Nov-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1