VSKT162-14PBF

VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power thyristor/diodes in three basic configurations • Simple mounting New INT-A-PAK • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for multiple level APPLICATIONS PRODUCT SUMMARY IT(AV) 135 A to 160 A • DC motor control and drives • Battery charges • Welders • Power converters • Lighting control • Heat and temperature control MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) ITSM I2t I2√t VRRM TJ Range Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS 85 °C VSK.136.. 135 300 3200 3360 51.5 47 515.5 VSK.142.. 140 310 4500 4712 102 92.5 1013 400 to 1600 - 40 to 125 VSK.162.. 160 355 4870 5100 119 108 1190 kA2s kA2√s V °C A UNITS A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VSK.136 VSK.142 VSK.162 08 12 14 16 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1400 1600 VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1500 1700 50 IRRM/IDRM AT 125 °C mA Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum forward voltage drop Maximum holding current Maximum latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM VFM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sine half wave, initial TJ = TJ maximum VSK.136 VSK.142 VSK.162 135 85 300 3200 3360 2700 2800 51.5 47 36.5 33.3 515.5 0.86 1.05 2.02 1.65 1.57 1.57 140 85 310 4500 4712 3785 3963 102 92.5 71.6 65.4 1013 0.83 1 1.78 1.43 1.55 1.55 200 400 mA 160 85 355 4870 5100 4100 4300 119 108 84 76.7 1190 0.8 0.98 1.67 mΩ (I > π x IT(AV)), TJ maximum ITM = π x IT(AV), TJ = 25 °C, 180° conduction ITM = π x IT(AV), TJ = 25 °C, 180° conduction Anode supply = 6 V initial IT = 30 A, TJ = 25 °C Anode supply = 6 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 1.38 1.54 1.54 V V kA2√s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum (I > π x IT(AV)), TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL tgd tgr tq TJ = 25 °C TEST CONDITIONS Gate current = 1 A, dlg/dt = 1 A/μs Vd = 0.67 % VDRM VALUES 1 2 50 to 200 μs UNITS ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TJ = 125 °C 50 Hz, circuit to base, all terminals shorted, t = 1 s TJ = TJ maximum, exponential to 67 % rated VDRM TEST CONDITIONS VALUES 50 3500 1000 UNITS mA V V/μs www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL PGM PG(AV) IGM - VGT tp ≤ 5 ms, TJ = TJ maximum TJ = - 40 °C VGT TJ = 25 °C TJ = TJ maximum TJ = - 40 °C Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger Maximum rate of rise of turned-on current IGT TJ = 25 °C TJ = TJ maximum VGD TJ = TJ maximum, rated VDRM applied IGD dI/dt TJ = TJ maximum, ITM = 400 A rated VDRM applied 10 300 mA A/μs Anode supply = 6 V, resistive load; Ra = 1 Ω TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum VALUES 12 3 3 10 4 2.5 1.7 270 150 80 0.3 V mA V UNITS W A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % Approximate weight Case style IAP to heatsink busbar to IAP SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.18 0.05 4 to 6 200 7.1 New INT-A-PAK Nm g oz. 0.16 K/W UNITS ΔR CONDUCTION PER JUNCTION DEVICES 180° VSK.136 VSK.142 VSK.162 0.007 0.0019 0.0030 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.01 0.0019 0.0031 90° 0.013 0.0020 0.0032 60° 0.0155 0.0020 0.0033 30° 0.017 0.0021 0.0034 180° 0.009 0.0018 0.0029 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.012 0.0022 0.0036 90° 0.014 0.0023 0.0039 60° 0.015 0.0023 0.0041 30° 0.017 0.0020 0.0040 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 350 M axim um Averag e O n-state Pow er Loss (W ) 300 250 200 150 100 50 0 0 50 1 00 C o n d uc tio n P eriod 130 120 110 VSK.136.. Series RthJC (DC) = 0.18 K/W Maximum Allowable Case Temperature (°C) Conduction Angle 100 90 80 70 0 20 40 60 80 100 120 140 DC 180 120 90 60 30 RM S Lim it 30° 60° 90° 120° 180° VSK .136.. Se ries Per Junction TJ = 12 5°C 1 50 2 00 2 50 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics A vera ge O n -sta te C urrent (A) Fig. 4 - On-State Power Loss Characteristics 130 Maximum Allowable Case Temperature (°C) 120 110 Pea k H alf Sin e W a ve O n -sta te C urren t (A ) VSK.136.. Series RthJC (DC) = 0.18 K/W 30 0 0 28 0 0 26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 1 A t A ny R ate d Lo ad Co nditio n A n d W ith R ated VRRM A pplied Follo w ing Surge . In itial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Conduction Period 100 30° 90 80 70 0 50 100 150 200 250 Average On-state Current (A) 60° 90° 120° 180° DC VSK.136.. Series Per Junction 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 250 200 150 100 50 0 0 180 120 90 60 30 Peak Ha lf Sine W a ve O n -sta te C urrent (A) 300 35 0 0 30 0 0 Maxim um No n Repetitive Surge Curre nt V ers us Pulse Train D uratio n. C ontrol O f Co nductio n M ay Not Be M aintained. In itial TJ = 125°C No V oltag e Re ap plie d Ra te d V Re ap plie d RRM 25 0 0 RMS Limit 20 0 0 Conduction Angle VSK.136.. Series Per Junction TJ = 125°C 30 60 90 120 150 15 0 0 VSK.1 36.. Se ries Pe r Ju nction 10 0 0 0 .0 1 0.1 Pulse Tra in D ura tion (s) 1 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 450 0. 0. M axim um Tota l O n -sta te Pow e r Loss (W ) R th 12 08 0 .0 400 350 300 250 200 150 100 50 0 0 50 100 C onductio n Angle 180 120 90 60 30 0. 0. K/ W W K/ W K/ 16 SA 4K /W W .01 =0 25 K/ K/ W -Δ 0 .4 K/ W R 0 .6 K/ W 1 K/ W VSK.136.. Se rie s Pe r M odule TJ = 12 5°C 150 200 250 300 0 25 50 75 1 00 125 Tota l R M S Outp ut C urre nt (A) M axim um A llowab le Am bient Tem pera ture (°C) Fig. 7 - On-State Power Loss Characteristics 1 0 00 A hS Rt M axim um To ta l P o we r Lo ss (W ) 90 0 80 0 70 0 60 0 50 0 40 0 30 0 20 0 10 0 0 0 55 11 0 165 220 20 5 7 25 2 x VSK.136.. Series Single P hase Brid ge C onnected T J = 125°C 0 .3 5 K/ W 0. 04 0. = K/ 08 0.0 W 180 (Sine ) 180 (Re ct) 0. 12 K/ W /W 1K K/ W ΔR 0 .2 K/ W 0. 6 K /W 50 75 100 125 Total O utp ut C urre nt (A) M axim um Allowab le Am bient Te m p era ture (°C ) Fig. 8 - On-State Power Loss Characteristics 15 0 0 M a xim u m To ta l Po w e r Lo ss (W ) Rt A hS 12 0 0 0. 08 = 0. 04 K/ W 90 0 120 (Rec t) 0.1 K/ - W Δ R K/ W 0 .1 60 0 3 x VSK.1 3 6.. Serie s Th ree Ph a se B rid g e C o n n ec te d TJ = 1 2 5°C 0 10 0 20 0 3 00 6K / W 30 0 K/ W 0 .4 K /W 0 . 25 1 K/ W 0 40 00 25 50 75 1 00 1 25 To ta l O u tp u t C u rre nt (A) M axim u m A llo w a b le A m b ien t Tem p e ra tu re (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 35 0 M axim um Averag e O n -state Pow er Loss (W ) VSK.142.. Series R thJC (D C ) = 0.18 K/W 30 0 25 0 20 0 R M S L im it 15 0 10 0 50 0 0 50 1 00 1 50 2 00 2 50 Averag e O n-state C urren t (A ) C o nd u c tio n Pe rio d 130 M a xim um Allo w ab le C ase Tem peratur e (°C) 120 110 C o nd uctio n Angle DC 180 120 90 60 30 100 90 80 70 0 30 60 90 1 20 1 50 A vera ge Forw a rd C urrent (A) 30 60 90 120 180 VSK .1 4 2 .. Se rie s P er Ju n c tio n TJ = 1 2 5°C Fig. 10 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics 130 M axim um Allow a ble C ase Tem perature (°C) 120 110 Peak H a lf Sin e W a ve O n -stat e C urren t (A) VSK.1 4 2 .. Se rie s R thJC (D C ) = 0 .1 8 K /W 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 1 A t A ny Rated Lo ad Co nditio n A n d W ith R ated V RRM A pplied Follo w ing Surge . In itial TJJ= 1 25°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s C o n d uc tio n P e rio d 100 30 90 80 70 0 50 100 15 0 200 25 0 Averag e O n-state C urrent (A) 60 90 120 180 DC VSK.142.. Series Per Junction 10 100 N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N ) Fig. 11 - Current Ratings Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current M axim um A ve ra ge O n -sta te Po w er Lo ss (W ) 25 0 180 120 90 60 30 RMS Lim it 10 0 C o nd uc tio n Angle Pea k H alf Sin e W ave O n -sta te C urren t (A) 5 00 0 4 50 0 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 20 0 M axim um Non Repetitive Surge Current V e rsus Pulse Train D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . In itial TJJ= 1 25°C N o V oltag e Re a pp lied Ra te d VR R M Re a pp lie d 15 0 50 VSK .142.. Series Per Junction TJ = 12 5°C 0 30 60 90 1 20 1 50 VSK.1 42.. Se rie s Pe r Ju nction 0 .1 Pu lse Tra in D uration (s) 1 0 Averag e O n-state C urren t (A ) 1 50 0 0 .0 1 Fig. 12 - On-State Power Loss Characteristics Fig. 15 - Maximum Non-Repetitive Surge Current www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 400 M axim um Total O n-state Pow e r Lo ss (W ) 0. 12 K/ 0. R th 0.0 0. 16 08 4K 300 180 120 90 60 30 SA K/ W 25 K/ W 0. W K/ W =0 .0 1 K/ W /W 0 .4 R -Δ K/ W 200 C o nductio n A n g le 0 .6 K/ W 100 VSK.142.. Se rie s Per M odule TJ = 125°C 1K /W 0 0 50 100 150 200 250 30 0 25 50 75 10 0 12 5 Tota l R M S O utp ut C urre nt (A) M axim um A llowa ble A m b ient Tem perature (°C) Fig. 16 - On-State Power Loss Characteristics 1 00 0 R th 0. 04 M a xim um Tota l P o w er Lo ss (W ) SA 80 0 0. 0 .1 K/ 08 W .0 =0 K/ W /W 1K 60 0 40 0 180 (Sine ) 180 (Re ct) 0.1 6K /W 2K /W ΔR 0 .2 5K /W 20 0 0 0 100 2 x VSK .1 4 2.. Se ries Sin g le P h a se Brid g e C o n n ec te d T J = 12 5°C 2 00 0 3 00 0 .6 K /W 25 50 75 10 0 12 5 To ta l O u tp ut C u rre nt (A ) M axim um A llowa ble A m b ient Tem perature (°C) Fig. 17 - On-State Power Loss Characteristics 16 0 0 Ma xim u m Total Power Lo ss (W ) S R th 0. 04 K/ A 12 0 0 120 (Rec t) 8 00 0. 06 K/ = W 0.0 / 2K W W - 0.0 ΔR 8K /W 4 00 W 3 x VSK.142.. Series Three P hase Brid ge 0 .1 6 K/ W C o nnected 0.2 K/ W TJ = 125°C 0.1 K/ 0 0 0 5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 45 0 Total O utp ut C urre nt (A) 25 50 75 10 0 12 5 M axim um A llowab le Am bie nt Tem perature (°C) Fig. 18 - On-State Power Loss Characteristics Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 40 0 M a xim um A vera g e O n -sta te Pow e r Lo ss (W ) 35 0 30 0 25 0 20 0 15 0 10 0 50 0 0 30 60 C o n du c tio n Pe rio d 130 M a xim um A llow ab le C a se Tem p era ture (°C) 120 110 VSK.162.. Series R thJ C (D C ) = 0.16 K/W C o nd uc tio n Angle DC 180 120 90 60 30 RM S Lim it 100 90 80 70 0 30 60 90 1 20 150 180 Averag e Fo rw ard C urrent (A) 30 60 90 120 180 VSK.162.. Series Per Junctio n TJ = 125°C 9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0 Averag e O n -sta te C urren t (A ) Fig. 19 - Current Ratings Characteristics Fig. 22 - On-State Power Loss Characteristics 1 30 M axim um Allow a b le C ase Tem perature (°C) 1 20 1 10 1 00 90 80 70 60 0 50 30 Pea k H alf Sin e W a ve O n-state C urren t (A ) VSK .162.. Series R thJC (DC ) = 0.16 K/W 4 50 0 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 1 50 0 1 A t A ny R ate d Lo ad C on dition A n d W ith Rate d VRRM A pplie d Fo llow ing Surg e. In itial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s C on d uctio n P e rio d 60 90 120 180 100 15 0 20 0 DC 2 50 300 VSK.162.. Series Per Jun ction 10 10 0 A vera ge O n -sta te C urrent (A) Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N) Fig. 20 - Current Ratings Characteristics Fig. 23 - Maximum Non-Repetitive Surge Current 4 00 M axim um Averag e O n-state Pow er Loss (W ) 3 50 3 00 2 50 2 00 1 50 1 00 50 C o nd uc tio n Angle 50 0 0 Peak Ha lf Sine W av e O n -sta te C urrent (A) VSK .162.. Se ries Per Junction T = 125°C J 180 120 90 60 30 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 M axim um Non Repetitive Surge Current V e rsus Pulse Tra in D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . In itia l TJ = 125°C No V olta ge Re ap plied Ra te d VR R M Re ap plie d RM S Lim it VSK .162.. Series Per Junction 0 .1 Pu lse Tra in D uration (s) 0 0 20 40 60 8 0 10 0 1 20 1 40 1 6 0 1 8 0 Averag e O n-state C urren t (A) 15 0 0 0.0 1 1 Fig. 21 - On-State Power Loss Characteristics Fig. 24 - Maximum Non-Repetitive Surge Current www.vishay.com 8 For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 600 M a xim um T ota l O n-state Pow e r Loss (W ) Rt 0. 04 0. A hS 500 400 300 C onductio n An gle 180 120 90 60 30 06 08 0. K/ W K/ W W K/ = 0. 0 2 K/ 0.1 W K/ W ΔR 0 .1 6K /W 200 VSK.162.. Se rie s Pe r M odule TJ = 125°C 0 100 200 300 400 0 0.2 K/ W 100 0 25 50 75 100 125 Tota l RM S O utp ut C urre nt (A) M axim um A llowab le Am b ie nt Tem p era ture (°C) Fig. 25 - On-State Power Loss Characteristics 9 00 M axim um Total P ower Lo ss (W ) 8 00 7 00 6 00 5 00 4 00 3 00 2 00 1 00 0 0 50 100 15 0 20 0 25 0 0 3 00 25 50 75 10 0 12 5 Tota l O utput C urrent (A) M axim um A llo wa ble A m b ient Tem perature (°C) 180 (Sine ) 180 (Re ct) 0. 0. 08 Rt K/ A hS W = 12 0. K/ 04 W K/ W 0.2 - K/ ΔR W 0.3 0 .4 K/ W K/ W 2 x VSK.162.. Series 0 .6 K/ W Single Phase Brid ge 1 K/ W C onnected TJ = 125°C Fig. 26 - On-State Power Loss Characteristics 1 5 00 S R th 0. M axim u m To tal Po wer Loss (W ) 04 1 2 50 1 0 00 7 50 5 00 2 50 0 0 50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 40 50 Tota l Output C urrent (A) 120 (Rect) 0. 08 K/ W K/ W A = 0. 0 2 K/ W - 0 .1 0 .2 ΔR 2K /W K/ W 3 x VSK.162.. Series 0 .3 K /W Three Phase Brid ge 0. 6 K / W C onnected TJ = 12 5°C 25 50 75 100 125 M a xim um Allo w a b le A m b ie n t Te m p era tu re (°C) Fig. 27 - On-State Power Loss Characteristics Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 9 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 1 Transient Thermal Impedance Z thJC Steady State Value (DC Operation) 10000 Instantaneous On-state Current (A) 1000 TJ = 25˚C TJ = 125˚C 0.1 100 0.01 10 VSK.136.. Series Per Junction VSK.136.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) 0.001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 Fig. 28 - On-State Voltage Drop Characteristics Fig. 31 - Thermal Impedance ZthJC Characteristics 10000 Transient Thermal Impedance Z thJC 1 Steady State Value (DC Operation) Instantaneous On-state Current (A) 1000 T = 25˚C J T = 125˚C J 100 0.1 10 VSK.142.. Series Per Junction VSK.142.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) 0.01 0.01 0.1 1 Square Wave Pulse Duration (s) 10 Fig. 29 - On-State Voltage Drop Characteristics Fig. 32 - Thermal Impedance ZthJC Characteristics 10000 Transient Thermal Impedance Z thJC 1 Steady State Value (DC Operation) Instantaneous On-state Current (A) 1000 TJ = 25˚C TJ = 125˚C 100 0.1 10 VSK.162.. Series Per Junction VSK.162.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) 0.01 0.01 0.1 1 Square Wave Pulse Duration (s) 10 Fig. 30 - On-State Voltage Drop Characteristics Fig. 33 - Thermal Impedance ZthJC Characteristics www.vishay.com 10 For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 1 00 Rec ta ng ula r g a te p ulse a )Re c o m m end e d lo a d line fo r ra ted d I/d t: 20 V, 20 W tr = 0.5 s, tp >= 6 s b )Re c o m m end e d loa d line fo r = 6 s In stan ta neous G a te V olta ge (V ) (1) (2) (3) (4) (a) (b ) T J = -40 °C T J = 25 °C PG M PG M PG M PG M = = = = 200 W , tp = 300 s 60 W , tp = 1 m s 30 W , tp = 2 m s 12 W , tp = 5 m s 10 T J = 12 5 °C 1 (4) (3 ) (2) (1) VG D IG D V SK.1 3 6 ..1 4 2 ..1 6 2 .. Se ries 0 .1 1 Frequen cy Lim ited by PG (AV ) 10 100 1 00 0 0 .1 0 .0 0 1 0.0 1 Instan ta n eous G a te C urren t (A ) Fig. 34 - Gate Characteristics ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 - T 2 162 3 / 16 4 PbF 5 Module type Circuit configuration Current rating: IT(AV) Voltage code x 100 = VRRM PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT... ~ VSKH... ~ VSKL... ~ + + + + K1 G1 + K2 K1 G1 G2 + - - K2 G2 - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95067 Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 11 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor DIMENSIONS in millimeters (inches) 30 (1.18) 9 (0.33) 7 (0.28) Ø 6.5 (0.25 DIA) 80 (3.15) 17 (0.67) 23 (0.91) 23 (0.91) 7 6 5 (0.20) 14.5 (0.57) 35 (1.38) 1 2 3 5 4 3 screws M6 x 10 66 (2.60) 94 (3.70) 2.8 x 0.8 (0.11 x 0.03) 28 (1.10) 29 (1.15) 37 (1.44) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1