VSKT430-18PBF

VSK.430..PbF Series Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC TYPICAL APPLICATIONS SUPER MAGN-A-PAK • Motor starters • DC motor controls - AC motor controls • Uninterruptable power supplies 430 A PRODUCT SUMMARY IT(AV) • Wind mill MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) ITSM I2t I2t VRRM TJ TStg Range Range CHARACTERISTICS 82 °C VALUES 430 675 TC 50 Hz 60 Hz 50 Hz 60 Hz 82 15.7 16.4 1232 1125 12 320 1600 to 2000 - 40 to 150 - 40 to 130 UNITS A A °C kA kA2s kA2s V °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 16 VSK.430.. 18 20 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1600 1800 2000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1700 1900 2100 100 IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93748 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.430..PbF Series Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV), IF(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave 82 180° conduction, half sine wave at TC = 82 °C t = 10 ms Maximum peak, one-cycle, non-repetitive surge current ITSM, IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rf1 rf2 VTM VFM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied 675 15.7 16.4 kA 13.2 Sinusoidal half wave, initial TJ = TJ maximum 13.8 1232 1125 871 795 12 320 0.96 V 1.06 0.51 m 0.45 1.65 1.65 500 TJ = 25 °C, anode supply 12 V resistive load mA 1000 V V kA2s kA2s °C A VALUES 430 UNITS A t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum forward voltage drop Maximum holding current Typical latching current SWITCHING PARAMETER Maximum rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/μs VR = 50, dV/dt = 20 V/μs, Gate 0 V 100  VALUES 1000 2.0 μs 200 UNITS A/μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt VINS IRRM, IDRM TEST CONDITIONS TJ = 130 °C, linear to VD = 80 % VDRM t=1s TJ = TJ maximum, rated VDRM/VRRM applied VALUES 1000 3000 100 UNITS V/μs V mA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93748 Revision: 02-Jul-10 VSK.430..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (SUPER MAGN-A-PAK Power Modules), 430 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink SMAP to heatsink Mounting torque ± 10 % busbar to SMAP Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJC RthC-hs A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. DC operation TEST CONDITIONS VALUES - 40 to 130 - 40 to 150 0.065 K/W 0.02 6 to 8 Nm 12 to 15 1500 g UNITS °C SUPER MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.009 0.011 0.014 0.021 0.037 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.022 0.038 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93748 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.430..PbF Series Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A Maximum Average On-state Power Loss (W) 1000 900 800 700 600 500 RMS Limit 400 300 200 100 0 0 100 200 300 400 500 600 700 Average On-state Current (A) Conduction Period 130 Maximum Allowable Case Temperature (°C) 120 110 Conduction Angle VSK.430..PbF Series R thJC (DC) = 0.065 K/W DC 180° 120° 90° 60° 30° 100 90 30° 80 70 0 100 200 300 400 50 Average On-state Current (A) 60° 90° 120° 180° VSK.430..PbF Series Per Junction T = 130°C J Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature (°C) Peak Half Sine Wave On-state Current (A) 130 120 110 Conduction Period VSK.430..PbF Series R thJC (DC) = 0.065 K/W 15000 14000 13000 12000 11000 10000 9000 8000 7000 6000 1 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T = 130°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 100 90 30° 80 70 0 100 200 300 400 500 600 700 Average On-state Current (A) 60° 90° 120° 180° DC VSK.430..PbF Series Per Junction 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 600 500 400 300 180° 120° 90° 60° 30° RMS Limit Peak Half Sine Wave On-state Current (A) 700 16000 15000 14000 13000 12000 11000 10000 9000 8000 7000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130°C No Voltage Reapplied Rated VRRM Reapplied Conduction Angle 200 100 0 0 100 200 300 400 500 Average On-state Current (A) VSK.430..PbF Series Per Junction TJ = 130°C VSK.430..PbF Series Per Junction 0.1 Pulse Train Duration (s) 1 6000 0.01 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93748 Revision: 02-Jul-10 VSK.430..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (SUPER MAGN-A-PAK Power Modules), 430 A Maximum Total On-state Power Loss (W) 800 R th S 700 600 Conduction Angle 180° 120° 90° 60° 30° 0. 12 0. 16 0. 09 W K/ K/ W A = 5K 0 .0 0. 2 K/ W 500 400 300 200 100 0 0 100 200 300 VSK.430..PbF Series Per Module T = 130°C J 400 500 600 700 0 K/ W /W -D e lt 0.3 K a /W R 0.4 K/ W 0.6 K / W 20 40 60 80 100 120 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics 3000 Maximum Total Power Loss (W) 2500 180° (Sine) 180° (Rect) R th A S 1. 5 2 K/ W = 1 W K/ 2000 1500 K/ W D e 3K /W 5K /W lt a R 1000 500 0 0 10 K /W 2 x VSK.430..PbF Series 15 K/ W Single Phase Bridge Connected T J = 130 °C 100 200 300 400 500 600 700 800 900 0 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C ) Fig. 8 - On-State Power Loss Characteristics 5000 Maximum Total Power Loss (W) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 200 400 3 x VSK.430..PbF Series Three Phase Bridge Connected T = 130°C J 600 120° (Rect) 0. R SA th 01 = K/ W 0. 0 05 0. 02 K/ W 0.0 3K /W K/ W -D el ta R 0.0 5K /W 0.1 K/ W 0.2 K/ W 800 1000 1200 1400 0 20 40 60 80 100 120 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 93748 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.430..PbF Series Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A Transient Thermal Impedance Z thJC (K/W) 0.1 VSK.430..PbF Series Per Junction 10000 Instantaneous On-state Current (A) TJ = 25 °C TJ = 130°C 1000 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 VSK.430..PbF Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr