VSKT570-18PBF

VSKT570-18PbF Vishay Semiconductors Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 570 A FEATURES • High current capability • High surge capability • Industrial standard package • 3000 VRMS isolating voltage with non-toxic substrate • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level TYPICAL APPLICATIONS • Motor starters SUPER MAGN-A-PAK • DC motor controls - AC motor controls • Uninterruptable power supplies 570 A PRODUCT SUMMARY IT(AV) MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) ITSM I2t I2t VRRM TStg TJ Range Range CHARACTERISTICS TC = 74 °C TC = 74 °C 50 Hz 60 Hz 50 Hz 60 Hz VALUES 570 895 17 800 18 700 1591 1452 15 910 1800 - 40 to 135 - 40 to 135 kA2s kA2s V °C A UNITS ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSKT570-18PbF VOLTAGE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE CODE V 18 1800 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1900 IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA 120 Document Number: 93281 Revision: 05-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKT570-18PbF Vishay Semiconductors Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 570 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave 180° conduction, half sine wave at TC = 74 °C t = 10 ms Maximum peak, one-cycle, non-repetitive on-state surge current ITSM, IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum VALUES 570 74 895 17.8 18.7 15.0 15.7 1591 1452 1125 1027 15 910 0.864 0.97 0.411 0.362 1.50 500 1000 kA2s V m V mA kA2s kA UNITS A °C A t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100  VALUES 1000 2.0 μs 200 UNITS A/μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt VINS IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to VD = 80 % VDRM t=1s TJ = TJ maximum, rated VDRM/VRRM applied VALUES 1000 3000 120 UNITS V/μs V mA www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93281 Revision: 05-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKT570-18PbF Thyristor/Thyristor Vishay Semiconductors (SUPER MAGN-A-PAK Power Modules), 570 A TRIGGERING PARAMETER Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) +IGM +VGM -VGM IGT VGT IGD VGD TJ = 25 °C, Vak 12 V TJ = TJ maximum TJ = TJ maximum, tp  5 ms TEST CONDITIONS TJ = TJ maximum, tp  5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 10 2.0 3.0 20 5.0 200 3.0 10 0.25 UNITS W A V mA V mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink SMAP to heatsink Mounting torque ± 10 % busbar to SMAP Approximate weight Case style See dimensions (link at the end of datasheet) SYMBOL TJ TStg RthJC RthC-hs A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. DC operation TEST CONDITIONS VALUES - 40 to 135 - 40 to 135 0.065 K/W 0.02 6-8 Nm 12-15 1500 g UNITS °C SUPER MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.009 0.011 0.014 0.021 0.037 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.022 0.038 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93281 Revision: 05-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKT570-18PbF Vishay Semiconductors Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 570 A 1200 140 Maximum Average On-State Power Loss (W) 130 Maximum Allowable Case Temperature (°C) VSKT570... Series RthJC = 0.065 K/W 1000 800 600 400 120 110 Ø 180° 120° 90° 60° 30° DC 100 90 80 70 60 50 0 100 200 300 400 180° 120° 90° 60° 30° Conduction angle RMS limit Ø Conduction period 200 0 VSKT570... Series TJ = 135 °C 0 100 200 300 400 500 600 700 800 900 500 600 700 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 4 - On-State Power Loss Characteristics 130 Maximum Allowable Case Temperature (°C) VSKT570... Series RthJC = 0.065 K/W Peak Half Sine Wave On-State Current (A) 140 16 000 15 000 14 000 13 000 12 000 11 000 10 000 9000 8000 7000 1 10 100 VSKT570... Series per junction At any rated load condition and with rated VRRM applied following surge. Initial TJ = 135 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 110 100 90 80 70 60 50 0 100 200 300 400 500 600 700 800 900 DC 180° 120° 90° 60° 30° Ø Conduction period Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-State Power Loss (W) 900 800 700 600 500 400 300 200 100 0 0 100 180° 120° 90° 60° 30° Peak Half Sine Wave On-State Current (A) 1000 18 000 16 000 14 000 12 000 10 000 8000 VSKT570... Series per junction 6000 0.01 0.1 1 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 135 °C No voltage reapplied Rated VRRM reapplied RMS limit Ø Conduction angle VSKT570... Series TJ = 135 °C 200 300 400 500 600 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 93281 Revision: 05-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKT570-18PbF Thyristor/Thyristor Vishay Semiconductors (SUPER MAGN-A-PAK Power Modules), 570 A 900 800 900 180° 120° 90° 60° 30° 800 Maximum Total On-State Power Loss (W) Maximum Total On-State Power Loss (W) 700 600 500 400 300 200 100 0 0 Ø Ø R 700 500 500 400 300 200 100 0 0 20 0.0 Conduction angle /W 2K /W 0.2 K 0.3 /W K/W 0.1 9K thS A = 0.0 7K /W 0.4 K /W 0.5 K /W VSKT570... Series per module TJ = 135 °C 100 200 300 400 500 600 700 800 900 0.6 K/W 40 60 80 100 120 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics Instantaneous On-State Current (A) 10 000 0.1 VSKT570... Series per junction 1000 ZthJC - Transient Thermal Impedance (K/W) 0.01 VSKT570... Series per junction 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Steady state value RthJC = 0.065 K/W (DC operation) 0.001 0.001 0.01 0.1 1 10 100 Instantaneous On-State Voltage (V) Fig. 8 - On-State Voltage Drop Characteristics Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs TJ = 25 °C TJ = 130 °C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) (b) TJ = 40 °C tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms 1 VGD IGD 0.1 0.001 0.01 (1) Frequency limited by PG(AV) 10 100 (2) (3) (4) VSK.570... Series 0.1 1 1000 Instantaneous Gate Current (A) Fig. 10 - Gate Characteristics Document Number: 93281 Revision: 05-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKT570-18PbF Vishay Semiconductors Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 570 A ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 - T 2 570 3 - 18 4 PbF 5 Module type Circuit configuration (see below) Current rating Voltage code x 100 = VRRM Lead (Pb)-free CIRCUIT CONFIGURATION VSKT 1 ~ + 2 3 - 4 (K1) 7 (K2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95283 www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93281 Revision: 05-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors Super MAGN-A-PAK Thyristor/Diode DIMENSIONS in millimeters (inches) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) M10 60.0 (2.36) 48.0 (1.89) 52 (2.05) 5 28.0 (1.10) 4 20.1 (0.78) 1 3 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 1.0 (0.039) 149.0 (5.67) 2 26.0 (0.98) 36.4 (1.14) 6 7 4.5 (0.20) 5, 6 = Gate 4, 7 = Cathode Document Number: 95283 Revision: 20-Mar-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1