VSML3710

VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process Description VSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package, released for Lead (Pb)-free Reflow Soldering. Features • • • • • • • • • • High radiant power Low forward voltage Angle of half intensity: ϕ = ± 60° e3 Peak wavelength: λp = 940 nm Compatible with automatic placement equipment EIA and ICE standard package Lead (Pb)-free reflow soldering acc. J-STD-020 Packed in 8 mm tape Suitable for pulse current operation Phototransistor with matched package: VEMT3700 • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC 94 8553 Applications • IR emitter in photointerrupters, sensors and reflective sensors • Household appliance • IR emitter in low space applications • Tactile keyboards Order Instructions Part VSML3710 VSML3710 Ordering code VSML3710-GS08 VSML3710-GS18 Remarks MOQ: 7500 pcs, 1500 pcs per reel MOQ: 8000 pcs, 8000 pcs per reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / ambient acc. figure 11 tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 170 100 - 40 to + 85 - 40 to +100 260 400 Unit V mA mA A mW °C °C °C °C K/W Document Number 81300 Rev. 1.2, 25-Jan-07 www.vishay.com 1 VSML3710 Vishay Semiconductors 180 120 Pv - Power Dissipation (mW) I F - Forward Current (mA) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 R thJA = 400 K/W 100 R thJA = 400 K/W 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 20140 Tamb- Ambient Temperature (°C) 20141 Tamb- Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Figure 2. Forward Current Limit vs. Ambient Temperature Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Temp. coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temp. coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temp. coefficient of λp Rise time Fall time Virtual source diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tr tf tf ∅ 4 25 8 60 35 - 0.6 ± 60 940 50 0.2 800 500 800 500 0.44 20 Min Typ. 1.35 2.6 - 1.85 100 Max 1.6 3.0 Unit V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 2 Document Number 81300 Rev. 1.2, 25-Jan-07 VSML3710 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 10000 0.01 0.02 0.05 100 I e - Radiant Intensity (mW/sr) t p /T = 0.005 Tamb < 60 °C I F - Forward Current (mA) 1000 10 100 0.2 0.5 DC 1 10 0.1 1 0.01 95 9985 0.1 1 10 100 15903 0.1 10 0 t p - Pulse Length (ms) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current 104 Radiant Power (mW) Φe - 1000 IF - Forward Current (mA) 103 100 102 tP = 100 µs tP/T = 0.001 101 10 1 100 0 13600 1 2 3 4 0.1 10 0 94 8740 VF - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Figure 4. Forward Current vs. Forward Voltage Figure 7. Radiant Power vs. Forward Current 1.2 1.1 Forward Voltage (V) 1.0 0.9 0.8 0.7 0 16848 1.6 IF = 1 mA I e rel ; Φe rel 1.2 IF = 20 mA 0.8 0.4 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature (°C) 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Figure 5. Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature Document Number 81300 Rev. 1.2, 25-Jan-07 www.vishay.com 3 VSML3710 Vishay Semiconductors 1.25 Φ rel - Relative Radiant Power e 0° I e rel - Relative Radiant Intensity 10° 20° 30° 1.0 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.75 0.5 0.25 IF = 100 mA 0 890 940 λ - Wavelength (nm) 990 94 8013 14291 Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions Mounting Pad Layout 1.2 area covered with solder resist 2.6 (2.8) 4 1.6 (1.9) 20541_1 www.vishay.com 4 Document Number 81300 Rev. 1.2, 25-Jan-07 4 VSML3710 Vishay Semiconductors Solder Profile Tape and Reel PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 300 250 255 °C 255°C 240 °C 217 °C m ax. 30 s max. 260 °C 245 °C Temperature (°C) 200 150 m ax. 120 s max. 100 s 100 50 0 0 19841 max. Ramp Up 3 °C/s max. Ramp Down 6 °C/s Adhesive Tape 50 100 150 Time (s) 200 250 300 Blister Tape Figure 11. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020B for Preconditioning acc. to JEDEC, Level 2a TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 0 50 235 °C...260 °C first wave ca. 200 K/s 100 °C...130 °C 5s (acc. to CECC00802) 948626-1 Component Cavity Figure 13. Blister Tape 94 8670 Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits 2 K/s forced cooling 100 Time (s) 150 ca. 5 K/s 3.5 3.1 2.2 2.0 200 250 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 Figure 12. Double Wave Solder Profile for Opto Components Drypack Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 Floor Life Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor Life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture Sensitivity Level 2a, acc. to J-STD-020B. Figure 14. Tape Dimensions in mm for PLCC-2 Drying In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number 81300 Rev. 1.2, 25-Jan-07 www.vishay.com 5 VSML3710 Vishay Semiconductors Missing Devices A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. Identification Label: Vishay Type Group Tape Code Production Code Quantity 120° 10.4 8.4 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 De-reeling direction 94 8158 321 329 14.4 max. 18857 Figure 17. Dimensions of Reel-GS18 > 160 mm 40 empty compartments min. 75 empty compartments Cover Tape Removal Force Carrier leader Carrier trailer Tape leader Figure 15. Beginning and End of Reel The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape. 10.0 9.0 120° 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity 180 178 14.4 max. 94 8665 Figure 16. Dimensions of Reel-GS08 www.vishay.com 6 Document Number 81300 Rev. 1.2, 25-Jan-07 VSML3710 Vishay Semiconductors Ozone Depleting Substances Policy StatementCover Tape Removal Force It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81300 Rev. 1.2, 25-Jan-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1