VSML3710_09

VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity 94 8553 • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with IR emitter series VEMT3700 DESCRIPTION VSML3710 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a PLCC-2 package for surface mounting (SMD). • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • IR emitter in photointerrupters, sensors and reflective sensors • IR emitter in low space applications • Household appliance • Tactile keyboards PRODUCT SUMMARY COMPONENT VSML3710 Ie (mW/sr) 8 ϕ (deg) ± 60 λp (nm) 940 tr (ns) 800 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSML3710-GS08 VSML3710-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81300 Rev. 1.4, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 180 120 100 80 60 TEST CONDITION SYMBOL VR IF VALUE 5 100 200 1 160 100 - 40 to + 85 - 40 to + 100 260 250 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 μs tp = 100 μs IFM IFSM PV Tj Tamb Tstg Acc. figure 11, J-STD-020 J-STD-051, soldered on PCB Tsd RthJA PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21343 Tamb - Ambient Temperature (°C) 21344 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81300 Rev. 1.4, 03-Nov-09 IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tr tf tf d 4 25 8 60 35 - 0.6 ± 60 940 50 0.2 800 500 800 500 0.44 20 MIN. TYP. 1.35 2.6 - 1.8 100 MAX. 1.6 3 UNIT V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm VSML3710 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 000 tp/T = 0.005 100 Tamb < 60 °C 0.01 1000 0.02 0.05 I e - Radiant Intensity (mW/sr) IF - Forward Current (mA) 10 100 0.2 0.5 DC 1 10 0.1 1 0.01 95 9985 0.1 1 10 100 15903 tp - Pulse Length (ms) 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 104 IF - Forward Current (mA) Radiant Power (mW) Φe - 1000 103 100 102 tP = 100 µs tP/T = 0.001 101 10 1 100 0 13600 1 2 3 4 0.1 10 0 94 8740 VF - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 IF = 1 mA IF - Forward Voltage (V) 1.6 1.1 1.0 0.9 0.8 0.7 0 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 16848 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 5 - Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81300 Rev. 1.4, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 0° 1.25 10° 20° 30° Ie, rel - Relative Radiant Intensity Φ rel - Relative Radiant Power e 1.0 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.75 0.5 0.25 IF = 100 mA 0 890 940 990 14291 λ - Wavelength (nm) 94 8013 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 1.75 ± 0.1 technical drawings according to DIN specifications Pin identification 0.9 Mounting Pad Layout 1.2 area covered with solder resist 2.8 ± 0.15 C A 2.6 (2.8) 2.2 4 Ø 2.4 3 + 0.15 1.6 (1.9) Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING Time (s) 19841 Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 81300 Rev. 1.4, 03-Nov-09 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com 4 ϕ - Angular Displacement VSML3710 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 10.0 9.0 Adhesive tape 120° Blister tape 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 63.5 60.5 Component cavity 94 8670 Fig. 12 - Blister Tape 180 178 14.4 max. 94 8665 3.5 3.1 2.2 2.0 Fig. 15 - Dimensions of Reel-GS08 10.4 8.4 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 120° 4.5 3.5 2.5 1.5 0.25 13.00 12.75 62.5 60.0 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 94 8668 Fig. 13 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 94 8158 > 160 mm 40 empty compartments min. 75 empty compartments Tape leader Carrier leader Carrier trailer Fig. 14 - Beginning and End of Reel Document Number: 81300 Rev. 1.4, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1