2SA1661-DY

Plastic-Encapsulate Transistors 2SA1661 (PNP) FEATURES Small Flat Package High Current Application High Voltage High Transition Frequency z z z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit VCBO Collector-Base Voltage Parameter -120 V VCEO Collector-Emitter Voltage -120 V 2. COLLECTO VEBO Emitter-Base Voltage -5 V 3. EMITTER IC Collector Current -0.8 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ 1. BASE SOT-89 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-5V, IC=-100mA VCE(sat) IC=-500mA,IB=-50mA -1 V Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 30 pF Collector-emitter saturation voltage fT Transition frequency VCE=-5V,IC=-0.1A, f=30MHz 80 240 120 MHz CLASSIFICATION OF hFE RANK O Y RANGE 80–160 120–240 MARKING DO. DY. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P1-P1