UMW AO3407A

UMW R UMW AO3407A P-Channel Enhancement MOSFET Features SOT–23 VDS (V) = -30V ID = -4.1 A RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V) 1. GATE 2. SOURCE D 3. DRAIN G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta = 25℃ ID Ta = 70℃ Pulsed Drain Current Power Dissipation IDM Ta = 25℃ PD Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤10s RthJA Steady State Thermal Resistance.Junction- to-Lead RthJL -3.5 A -20 1.4 1 W 90 125 ℃/W 60 Junction Temperature TJ 150 Tstg -55 to 150 1 V -4.1 Storage Temperature Range www.umw-ic.com Unit ℃ 友台半导体有限公司 UMW R UMW AO3407A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Test Conditions Min RDS(On) -30 ID=-250μA, VGS=0V VDS=-24V, VGS=0V, TJ=55℃ -5 VDS=VGS ID=-250μA VGS=-10V, ID=-4.A TJ=125℃ ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=-4.5V, VDS=-5V -10 VDS=-5V, ID=-4A 5.5 ±100 nA -3 V 40.5 52 57 73 64 87 8.2 VGS=0V, VDS=-15V, f=1MHz 75 VGS=0V, VDS=0V, f=1MHz 10 8.6 Turn-On Rise Time tr Turn-Off DelayTime td(off) Maximum Body-Diode Continuous Current Diode Forward Voltage www.umw-ic.com VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=3Ω 5 ns 28.2 13.5 tf IF=-4A, dI/dt=100A/μs 27 15 IS VSD nC 7 3.1 trr Ω 14.3 VGS=-4.5V, VDS=-15V, ID=-4A Qgd Qrr pF 120 td(on) Body Diode Reverse Recovery Charge S 700 Turn-On DelayTime Body Diode Reverse Recovery Time mΩ A Gate Drain Charge Turn-Off Fall Time μA -1.8 VDS=0V, VGS=±20V -1 Unit V -1 VGS=-4.5V, ID=-3A On state drain current Max VDS=-24V, VGS=0V VGS=-10V, ID=-4.1A Static Drain-Source On-Resistance Typ IS=-1A,VGS=0V 2 -0.77 nC -2.2 A -1 V 友台半导体有限公司 R UMW UMW AO3407A ■ Typical Characterisitics 10 20 -10V -5V -4.5V -4V -ID (A) -ID (A) V DS =-5V 8 15 10 -3.5V 5 4 V GS =-3V 0 0.00 6 125°C 2 25°C 0 1.00 2.00 3.00 4.00 5.00 0 1 100 Normalized On-Resistance (Ω) R DS(ON) (mΩ) 3 4 1.6 80 V GS =-4.5V 60 V GS =-10V 40 20 V GS =-4.5V 1.4 V GS =-10V 1.2 1 I D =-2A 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1E+01 140 1E+00 ID=-2A 1E-01 -IS (A) 120 R DS(ON) (mΩ) 2 -VGS (Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 100 125°C 80 125°C 1E-02 1E-03 25°C 1E-04 60 25°C 40 1E-05 1E-06 20 2 4 6 8 0.0 10 www.umw-ic.com 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 友台半导体有限公司 R UMW UMW AO3407A ■ Typical Characterisitics 1000 10 V DS =-15V I D =-4A 800 Capacitance (pF) -VGS (Volts) 8 6 4 2 C iss 600 400 C oss C rss 200 0 0 0 4 8 12 16 0 -Q g (nC) Figure 7: Gate-Charge Characteristics 100 15 20 25 30 40 T J(Max) =150°C T A =25°C R DS(ON) limited 30 100 µs 10 µs Power (W) -I D (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics T J(Max) =150°C T A =25°C 10 5 1ms 0.1s 10ms 1 20 10 1s 10s DC 0.1 0.1 1 10 -VDS (Volts) 0 0.001 100 Z θJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A +P DM .ZθJA .RθJA R θJA =90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司