BUK7M15-40HX

BUK7M15-40H N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits • • • • Fully automotive qualified to AEC-Q101 at 175 °C Trench 9 superjunction technology: • Low power losses, high power density LFPAK copper clip package technology: • High robustness and reliability • Gull wing leads for high manufacturability and AOI Repetitive avalanche rated 3. Applications • • • • • 12 V automotive systems Powertrain, chassis, body and infotainment applications Medium/Low power motor drive DC-DC systems LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 30 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 44 W VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 8.5 12.2 15 mΩ ID = 10 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14 - 1.7 3.4 nC IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V - 11 - nC [1] Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max S softness factor IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 - 0.56 - [1] Unit 30A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 2 S source 3 S source G 4 G gate mbb076 mb D Mounting base; connected to drain D 1 2 3 S 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package BUK7M15-40H Name Description Version LFPAK33 Plastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch SOT1210 7. Marking Table 4. Marking codes Type number Marking code BUK7M15-40H 71540H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 44 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 30 A VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 27.4 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 155 A IDM peak drain current Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 2 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 Symbol Parameter Conditions Min Max Unit IS source current Tmb = 25 °C - 30 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 155 A - 10.7 mJ Avalanche ruggedness EDS(AL)S [1] [2] [3] non-repetitive drainID = 30 A; Vsup ≤ 40 V; RGS = 50 Ω; source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [2] [3] 30A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 ID (A) Pder (%) aaa-029127 40 30 (1) 80 20 40 10 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 25 50 75 100 125 150 175 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature Continuous drain current as a function of mounting base temperature aaa-029090 103 102 200 VGS ≥ 10 V (1) 30A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Fig. 2. ID (A) 0 Limit RDSon = VDS / ID tp = 10 µs 10 100 µs DC 1 1 ms 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 3 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 IAL (A) aaa-029091 102 10 (1) (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-mb) Conditions thermal resistance from Fig. 5 junction to mounting base Min Typ Max Unit - 3.22 3.44 K/W aaa-029092 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 P single shot δ= Fig. 5. 10-5 10-4 10-3 10-2 T t tp 10-2 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V Static characteristics V(BR)DSS drain-source breakdown voltage BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 4 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 Symbol VGS(th) IDSS IGSS RDSon RG Parameter gate-source threshold voltage drain leakage current gate leakage current drain-source on-state resistance gate resistance Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; Fig. 10 2.4 3 3.6 V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 10 1 - - V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.24 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 19 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 8.5 12.2 15 mΩ VGS = 10 V; ID = 10 A; Tj = 105 °C; Fig. 12 11.6 17.6 22.5 mΩ VGS = 10 V; ID = 10 A; Tj = 125 °C; Fig. 12 12.8 19 24.2 mΩ VGS = 10 V; ID = 10 A; Tj = 175 °C; Fig. 12 15.5 23 29.1 mΩ f = 1 MHz; Tj = 25 °C 0.3 0.9 2.3 Ω ID = 10 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14 - 9.1 12.7 nC - 2.8 4.2 nC - 1.7 3.4 nC - 572 801 pF - 251 351 pF - 28 62 pF - 3.9 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 2 - ns td(off) turn-off delay time - 7.2 - ns tf fall time - 3.2 - ns VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 VDS = 30 V; RL = 3 Ω; VGS = 10 V; RG(ext) = 5 Ω Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.85 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Fig. 17 - 19 - ns Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V - 11 - nC S softness factor IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 - 0.56 - IS = 10 A; dIS/dt = -500 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 - 0.37 - BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 5 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 ID (A) aaa-029093 50 10 V 6.5 V aaa-029094 60 RDSon (mΩ) 50 5.5 V 40 40 30 VGS = 5 V 30 20 20 4.5 V 10 10 4V 0 Fig. 6. ID (A) 0 1 2 3 VDS (V) 0 4 4 8 12 16 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 10 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-029095 50 10-2 30 10-3 20 10-4 10 0 175°C 1 2 3 4 5 6 VGS (V) 10-6 7 VDS = 8 V Product data sheet Typ Max 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values BUK7M15-40H Min 10-5 25°C Tj = -55°C 0 aaa-018138 10-1 ID (A) 40 Fig. 8. 0 Fig. 9. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 6 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 VGS(th) (V) aaa-018139 5 aaa-029096 60 RDSon (mΩ) 50 4 4.5 V 5V 5.5 V Max 40 3 Typ 30 2 1 0 -60 10 -30 0 30 60 90 120 150 Tj (°C) 0 180 ID = 1 mA ; VDS = VGS VGS (V) 8 1.2 6 0.8 4 0.4 2 0 30 60 10 20 30 40 ID (A) 50 90 120 150 Tj (°C) 0 180 aaa-029097 10 1.6 -30 0 Fig. 11. Drain-source on-state resistance as a function of drain current; typical values aaa-029494 2 0 -60 VGS = 10 V Tj = 25 °C Fig. 10. Gate-source threshold voltage as a function of junction temperature a 6.5 V 20 Min VDS = 14 V 32 V 0 2 4 6 8 QG (nC) 10 Tj = 25 °C; ID = 10 A Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK7M15-40H Product data sheet Fig. 13. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 7 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 aaa-029098 103 C (pF) VDS ID Ciss Coss VGS(pl) 102 VGS(th) VGS QGS2 QGS1 QGS QGD QG(tot) Crss 003aaa508 10 10-1 Fig. 14. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values IS (A) 003aaf444 aaa-029099 50 ID (A) 40 trr ta 30 tb 0 20 175°C 10 0 0.25 IRM Tj = 25°C tb S= t a 0 0.2 0.4 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7M15-40H Product data sheet IRM t (s) Fig. 17. Reverse recovery timing definition All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 8 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 11. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E A e1 A c1 b1 L1 SOT1210 D2 mounting base D1 (D) H E1 L 1 4 b e w A A1 C X c Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) A A1 b(1) max 0.90 0.10 0.35 nom min 0.80 0.00 0.25 mm b1(1) c c1 2.4 0.20 0.30 2.2 0.10 0.20 D ref 2.60 D1 2.35 1.90 D2 0.50 E(1) E1 3.40 2.45 3.20 2.00 e e1 0.65 0.65 H L L1 Lp 3.40 0.65 0.25 0.50 3.20 0.45 0.13 0.30 w 0.20 0.10 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version sot1210_po References IEC JEDEC y JEITA European projection Issue date 14-04-25 16-08-09 SOT1210 Fig. 18. Package outline LFPAK33 (SOT1210) BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 9 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 12. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. All rights reserved 10 / 11 BUK7M15-40H Nexperia N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 4 11. Package outline.......................................................... 9 12. Legal information......................................................10 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 29 January 2019 BUK7M15-40H Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2019 © Nexperia B.V. 2019. 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