ES3D

ES3A THRU ES3J SURFACE MOUNT SUPER FAST RECTIFIER Forward Current - 3.0 Amperes Reverse Voltage - 50 to 600 Volts FEATURES DO-214AB/SMC The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Glass passivated chip junction 0.245(6.22) 0.220(5.59) 0.126 (3.20) 0.114 (2.90) 0.280(7.11) 0.260(6.60) 0.012(0.305) 0.006(0.152) MECHANICAL DATA 0.103(2.62) 0.079(2.06) 0.060(1.52) 0.030(0.76) Case : JEDEC DO-214AB molded plastic body over passivated chip Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.007 ounce, 0.25grams 0.008(0.203)MAX. 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) VRRM VRMS VDC ES3A ES3B ES3C 50 35 50 100 70 100 150 105 150 200 140 200 ES3G ES3J UNITS 400 280 400 600 420 600 VOLTS VOLTS VOLTS 300 210 300 I(AV) 3.0 Amps IFSM 100.0 Amps VF 0.95 1.25 5.0 100.0 IR Typical thermal resistance (NOTE 3) Operating junction and storage temperature range ES3D ES3E 1.7 Volts µA trr 35 ns CJ 45.0 47.0 -50 to +150 pF C/W C RθJA TJ,TSTG Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas MDD ELECTRONIC FIG. 1- FORWARD CURRENT DERATING CURVE 3.0 2.4 1.8 Single Phase Half Wave 60Hz Resistive or inductive Load 1.2 0.6 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES ES3A THRU ES3J FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 80 60 40 20 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 20 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 1 0.1 ES3A-ES3D ES3E-ES3G ES3J 0.01 0 0.4 0.8 1.2 1.6 1.8 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 1,000 100 10 TJ=100 C 1 TJ=25 C 0.1 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 10 TJ=25 C TRANSIENT THERMAL IMPEDANCE, C/W 200 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 1 0.1 1.0 10 100 PERCENTAGE OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 100 NUMBER OF CYCLES AT 60 Hz 100 REVERSE VOLTAGE,VOLTS MDD ELECTRONIC t,PULSE DURATION,sec. 100