PMGD175XNEA
30 V, Dual N-channel Trench MOSFET
17 March 2017
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
0.9
A
-
211
252
mΩ
Per transistor
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics (per transistor)
RDSon
[1]
drain-source on-state
resistance
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
Simplified outline
6
5
Graphic symbol
D2
D1
4
G1
1
2
G2
3
TSSOP6 (SOT363)
S1
S2
017aaa256
6. Ordering information
Table 3. Ordering information
Type number
PMGD175XNEA
Package
Name
Description
Version
TSSOP6
plastic surface-mounted package; 6 leads
SOT363
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PMGD175XNEA
C6%
[1]
% = placeholder for manufacturing site code
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
2 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
-12
12
V
ID
drain current
Per transistor
VGS = 4.5 V; Tamb = 25 °C
[1]
-
0.9
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
0.5
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
4
A
EDS(AL)S
non-repetitive drainsource avalanche
energy
Tj(init) = 25 °C; ID = 0.3 A; DUT in
avalanche (unclamped)
-
5.6
mJ
Ptot
total power dissipation
Tamb = 25 °C
[2]
-
260
mW
[1]
-
310
mW
-
905
mW
-
390
mW
Tsp = 25 °C
Per device
Ptot
total power dissipation
Tamb = 25 °C
[2]
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.31
A
-
2000
V
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
ESD maximum rating
VESD
[1]
[2]
electrostatic discharge
voltage
HBM
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
3 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
- 25
25
75
125
Tj (°C)
0
- 75
175
Fig. 2.
Normalized total power dissipation as a
function of junction temperature
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-022576
10
ID
(A)
tp = 10 µs
Limit RDSon = VDS/ID
100 µs
1
1 ms
DC; Tsp = 25 °C
10-1
10 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
1
100 ms
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
Min
Typ
Max
Unit
[1]
-
417
480
K/W
[2]
-
352
405
K/W
[2]
-
295
340
K/W
Per transistor
Rth(j-a)
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
4 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
Symbol
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
Conditions
Min
Typ
Max
Unit
-
120
138
K/W
-
-
320
K/W
Per device
Rth(j-a)
[1]
[2]
thermal resistance
from junction to
ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-022577
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.20
0.50
0.25
0.10
0.05 0.02
0.01
0
10
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-022578
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.20
0.50
0.25
0.10
0.05
0.02
0.01
0
10
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
5 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.75
1
1.25
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
5
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-5
µA
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
-
211
252
mΩ
VGS = 4.5 V; ID = 0.9 A; Tj = 150 °C
-
344
411
mΩ
VGS = 2.5 V; ID = 0.8 A; Tj = 25 °C
-
267
319
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 0.9 A; Tj = 25 °C
-
3.5
-
S
RG
gate resistance
Tj = 25 °C; f = 1 MHz
-
21
-
Ω
-
1.05
1.65
nC
-
0.15
-
nC
-
0.27
-
nC
-
81
-
pF
-
13
-
pF
-
9
-
pF
-
7
-
ns
-
14
-
ns
Dynamic characteristics (per transistor)
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
17
-
ns
tf
fall time
-
6
-
ns
-
0.7
1.2
V
VDS = 15 V; ID = 0.9 A; VGS = 4.5 V;
Tj = 25 °C
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; ID = 0.9 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode (per transistor)
VSD
source-drain voltage
PMGD175XNEA
Product data sheet
IS = 0.3 A; VGS = 0 V; Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
6 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
aaa-022730
4
4.5 V
ID
(A)
3.0 V
aaa-022731
10-2
2.6 V
ID
(A)
2.5 V
10-3
3
2.2 V
min
typ
max
10-4
2
2.0 V
10-5
1.8 V
1
VGS = 1.6 V
0
0
1
2
3
VDS (V)
10-6
4
Tj = 25 °C
Fig. 6.
aaa-022732
1.6 V 1.8 V
2.0 V
2.2 V
0.5
1.0
1.5
2.0
Sub-threshold drain current as a function of
gate-source voltage
aaa-022733
1.0
2.5 V
VGS (V)
VDS = 5 V
Tj = 25 °C
Output characteristics: drain current as a
function of drain-source voltage; typical values Fig. 7.
1.2
0
RDSon
(Ω)
RDSon
(Ω)
0.8
0.8
0.6
0.4
0.4
0.2
VGS = 4.5 V
0
0
1
2
3
VDS (V)
0
4
Tj = 25 °C
Fig. 8.
Tj = 150 °C
3.0 V
Product data sheet
0
4
8
VGS (V)
12
ID = 0.9 A
Drain-source on-state resistance as a function
of drain current; typical values
PMGD175XNEA
Tj = 25 °C
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
7 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
aaa-022734
3
aaa-022735
2.0
a
ID
(A)
1.5
2
1.0
1
Tj = 150 °C
0.5
Tj = 25 °C
0
0
1
2
0
-60
3
VGS (V)
0
60
120
Tj (°C)
180
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
aaa-022736
2.0
aaa-022737
103
VGS(th)
(V)
C
(pF)
1.5
102
1.0
Ciss
max
Coss
10
typ
0.5
Crss
min
0
-60
0
60
120
Tj (°C)
1
10-1
180
ID = 250 μA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
ambient temperature
PMGD175XNEA
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
8 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
aaa-022738
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
1
0
QGS2
0
0.5
1.0
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
1.5
VDS = 15 V; ID = 0.9 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-022739
0.3
IS
(A)
0.2
0.1
Tj = 150 °C
Tj = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
9 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
10 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
y
A
X
HE
6
5
v M A
4
Q
pin 1
index
A
1
2
e1
A1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SC-88
Fig. 18. Package outline TSSOP6 (SOT363)
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
11 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
13. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
0.3 2.5
4.5
1.5
solder resist
occupied area
Dimensions in mm
1.3
preferred transport
direction during soldering
1.3
2.45
5.3
sot363_fw
Fig. 20. Wave soldering footprint for TSSOP6 (SOT363)
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
12 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMGD175XNEA v.1
20170317
Product data sheet
-
-
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
13 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PMGD175XNEA
Product data sheet
Trademarks
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
14 / 15
PMGD175XNEA
Nexperia
30 V, Dual N-channel Trench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information....................................................... 10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information..................................................... 14
©
Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 March 2017
PMGD175XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2017
©
Nexperia B.V. 2017. All rights reserved
15 / 15