TSA1036CX RFG

TSA1036CX Taiwan Semiconductor General Purpose PNP Transistor FEATURES KEY PERFORMANCE PARAMETERS ● Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA ● PNP Silicon Transistor ● Compliant to RoHS Directive 2011/65/EU and in PARAMETER VALUE UNIT BVCBO -60 V BVCEO -60 V IC -0.6 A -0.4 V accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 VCE(SAT) ● Consumer electronics ● General purpose amplification en de d APPLICATION IC=-150mA, IB=-15mA mm SOT-23 Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020 PARAMETER eco ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL LIMIT UNIT VCBO -60 V VCEO -60 V VEBO -5 V Collector Current IC -0.6 A Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 °C TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 556 Collector-Base Voltage No tR Collector-Emitter Voltage Emitter-Base Voltage Operating Junction and Storage Temperature Range Note: Single pulse, Pw ≤ 380µ s, Duty ≤ 2% THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance 1 o C/W Version: C1906 TSA1036CX Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 1) IC=-10µA, IE=0 BVCBO -60 -- -- V Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 BVCEO -60 -- -- V Emitter-Base Breakdown Voltage IE=-10µA, IC=0 BVEBO -5 -- -- V Collector Cutoff Current VCB=-50V, IE=0 ICBO -- -- -10 nA Emitter Cutoff Current VEB=-0.5V, VCE=-30V IEBO -- -- -50 nA Collector-Emitter Saturation Voltage IC/IB =-150mA /-15mA *VCE(SAT) -- -- -0.4 V Base-Emitter Saturation Voltage IC/IB =-500mA /-50mA *VBE(SAT) -- -- -1.3 V VCE =-10V, IC=-0.1A *hFE 1 75 -- -- VCE =-10V, IC=-150mA *hFE 2 100 -- 300 fT 200 -- -- MHz Cob -- -- 8 pF VCE =-5V, IC=-50mA, f=100MHz Output Capacitance VCB = -10V, f=1MHz mm ORDERING INFORMATION en Transition Frequency Note: Pulse test: ≤ 380µs, duty cycle ≤ 2% de DC Current Transfer Ratio d Collector-Base Breakdown Voltage PACKAGE PACKING TSA1036CX RFG SOT-23 3,000pcs / 7” Reel No tR e co ORDERING CODE 2 Version: C1906 TSA1036CX Taiwan Semiconductor ELECTRICAL CHARACTERICS CURVES (TA=25oC, unless otherwise noted) Figure 2. VCE(SAT) v.s. Ic en de d Figure 1. DC Current Gain Figure 4. Cutoff Frequency vs. Ic tR e co mm Figure 3. VBE(SAT) v.s. Ic No Figure 5. Power Derating Curve 3 Version: C1906 TSA1036CX Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) de d SOT-23 e co MARKING DIAGRAM mm en SUGGESTED PAD LAYOUT (Unit: Millimeters) 4 =Apr 8 =Aug C =Dec No tR 2T = Device Code xx = Year Code + Month Code Year Code: 7=2017, 8=2018 Month Code: 1 =Jan 2 =Feb 3 =Mar 5 =May 6 =Jun 7 =Jul 9 =Sep A =Oct B =Nov 4 Version: C1906 TSA1036CX No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: C1906