TSM60NB190CI C0G

TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES KEY PERFORMANCE PARAMETERS ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 0.19 Ω Qg 31 nC ● ● ● ● ● High ruggedness performance 100% UIS tested High commutation performance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting ITO-220 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ITO-220 TO-220 UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 18 A 10.8 A 54 A TC = 25°C Continuous Drain Current (Note 1) Pulsed Drain Current ID TC = 100°C (Note 2) IDM Total Power Dissipation @ TC = 25°C PDTOT 33.8 150.6 W Single Pulsed Avalanche Energy (Note 3) EAS 212.9 mJ Single Pulsed Avalanche Current (Note 3) IAS 2.6 A TJ, TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER SYMBOL ITO-220 TO-220 UNIT Junction to Case Thermal Resistance RӨJC 3.7 0.83 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. 1 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 3.0 4.0 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA RDS(on) -- 0.17 0.19 Ω Qg -- 31 -- Qgs -- 8 -- Qgd -- 12.6 -- Drain-Source On-State Resistance VGS = 10V, ID = 6A (Note 4) Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 18A, VGS = 10V Gate-Source Charge Gate-Drain Charge Input Capacitance Ciss -- 1273 -- Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Coss -- 92 -- Gate Resistance F = 1MHz, open drain Rg -- 3.1 -- td(on) -- 36 -- tr -- 21 -- td(off) -- 95 -- tf -- 21 -- Switching nC pF Ω (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 18A, VGS = 10V, Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time ns Source-Drain Diode Forward On Voltage (Note 4) IS = 18A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VR=100V, IS = 18A dIF/dt = 100A/μs trr -- 359.4 -- ns Qrr -- 4.54 -- μC Reverse Recovery Charge Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 63mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. PACKAGE PACKING TSM60NB190CI C0G ITO-220 50pcs / Tube TSM60NB190CZ C0G TO-220 50pcs / Tube 2 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Output Characteristics VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Drain Current ID, Drain Current (A) Qg, Gate Charge (nC) Source-Drain Diode Forward Current vs. Voltage IS, Body Diode Forward Current (A) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Junction Temperature VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 3 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature C, Capacitance (pF) BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) Maximum Safe Operating Area (TO-220) ID, Drain Current (A) ID, Drain Current (A) Maximum Safe Operating Area (ITO-220) VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 10 1 10 0 10 -1 10 -2 10 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (s) 4 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor Normalized Thermal Transient Impedance, Junction-to-Case (TO-220) Normalized Effective Transient Thermal Impedance 10 10 10 1 0 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -1 -2 10 -4 10 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 5 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 7 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: D1608