TSM60NB190CM2 RNG

TSM60NB190CM2 Taiwan Semiconductor N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES KEY PERFORMANCE PARAMETERS ● Super-Junction technology PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 0.19 Ω Qg 31 nC ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS & Rg tested ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting 2 TO-263 (D PAK ) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 18 A 10.8 A IDM 54 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PDTOT 150.6 W Single Pulsed Avalanche Energy (Note 3) EAS 212.9 mJ Single Pulsed Avalanche Current (Note 3) IAS 2.6 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 0.83 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. 1 Version: A1608 TSM60NB190CM2 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 3.0 4.0 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA RDS(on) -- 0.17 0.19 Ω Qg -- 31 -- Qgs -- 8 -- Qgd -- 12.6 -- Drain-Source On-State Resistance (Note 4) Dynamic VGS = 10V, ID = 6A (Note 5) Total Gate Charge VDS = 380V, ID = 18A, Gate-Source Charge VGS = 10V Gate-Drain Charge nC Input Capacitance VDS = 100V, VGS = 0V, Ciss -- 1273 -- Output Capacitance f = 1.0MHz Coss -- 92 -- Rg -- 3.1 6.2 td(on) -- 36 -- tr -- 21 -- td(off) -- 95 -- tf -- 21 -- IS = 18A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VR=100V, IS = 18A trr -- 359.4 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 4.54 -- μC Gate Resistance Switching pF Ω (Note 6) Turn-On Delay Time VDD = 380V, Turn-On Rise Time RGEN = 25Ω, Turn-Off Delay Time ID = 18A, VGS = 10V, Turn-Off Fall Time ns Source-Drain Diode Forward On Voltage (Note 4) Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 63mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. TSM60NB190CM2 RNG PACKAGE 2 TO-263 (D PAK ) PACKING 800pcs / 13” Reel 2 Version: A1608 TSM60NB190CM2 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Output Characteristics VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Drain Current ID, Drain Current (A) Qg, Gate Charge (nC) Source-Drain Diode Forward Current vs. Voltage IS, Body Diode Forward Current (A) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Junction Temperature VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 3 Version: A1608 TSM60NB190CM2 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature C, Capacitance (pF) BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) ID, Drain Current (A) Maximum Safe Operating Area VDS, Drain to Source Voltage (V) Normalized Effective Transient Thermal Impedance 101 Normalized Thermal Transient Impedance, Junction-to-Case 100 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-1 10-2 10-4 10-2 10-3 10-1 Square Wave Pulse Duration (s) 4 Version: A1608 TSM60NB190CM2 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-263 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 60NB190 G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1608 TSM60NB190CM2 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1608